論文 1991

• Kinetics of Ge segregation in the presence of Sb during molecular beam epitaxy
  S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki, R. Ito
  Materials Research Society Symposium Proceedings Vol. 220, pp. 217-222 (1991).
  DOI: 10.1557/PROC-220-217
• Suppression of interfacial mixing by Sb deposition in Si/Ge strained-layer superlattices
  K. Fujita, S. Fukatsu, H. Yaguchi, T. Igarashi, Y. Shiraki, R. Ito
  Materials Research Society Symposium Proceedings Vol. 220, pp. 193-197 (1991).
  DOI: 10.1557/PROC-220-193
• Initial oxidation of MBE-grown Si surfaces
  T. Igarashi, H. Yaguchi, K. Fujita, S. Fukatsu, Y. Shiraki, R. Ito, T. Hattori
  Materials Research Society Symposium Proceedings Vol. 220, pp. 35-39 (1991).
  DOI: 10.1557/PROC-220-35
• Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation
  K. Fujita, S. Fukatsu, H. Yaguchi, Y. Shiraki and R. Ito
  Applied Physics Letters Vol. 59, No. 18, pp. 2240-2241 (1991).
  DOI: 10.1063/1.106082
• Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
  S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito
  Applied Physics Letters Vol. 59, No. 17, pp. 2103-2105 (1991).
  DOI: 10.1063/1.106412
• Strain Relaxation in MBE-Grown Si_1-xGe_x/Si(100) Heterostructures by Annealing
  H. Yaguchi, K. Fujita, S. Fukatsu, Y. Shiraki and R. Ito
  Japanese Journal of Applied Physics Vol. 30, No. 8B, pp. L1450-L1453 (1991).
  DOI: 10.1143/JJAP.30.L1450