Yaguchi

論文 1992


  • MOVPE growth of cubic GaN on GaAs using dimethylhydrazine
    S. Miyoshi, K. Onabe, N. Ohkouchi, H. Yaguchi, R. Ito, S. Fukatsu and Y. Shiraki
    Journal of Crystal Growth Vol. 124, No. 1-4, pp. 439-442 (1992).
    DOI: 10.1016/0022-0248(92)90497-7
  • Initial oxidation of MBE-grown Si(100) surfaces
    H. Yaguchi, K. Fujita, S. Fukatsu, Y. Shiraki, R. Ito, T. Igarashi and T. Hattori
    Surface Science Vol. 275, No. 3, pp. 395-400 (1992).
    DOI: 10.1016/0039-6028(92)90811-J
  • Atomistic picture of interfacial mixing in the Si/Ge heterostructures
    S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito
    Surface Science Vol. 267, No. 1-3, pp. 79-82 (1992).
    DOI: 10.1016/0039-6028(92)91093-Q
  • Intersubband absorption in narrow Si/SiGe multiple quantum wells without interfacial smearing
    K. Fujita, S. Fukatsu, Y. Shiraki, H. Yaguchi and R. Ito
    Applied Physics Letters Vol. 61, No. 2, pp. 210-212 (1992).
    DOI: 10.1063/1.108220
  • Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
    H. Yaguchi, X. Zhang, K. Onabe, Y. Shiraki and R. Ito
    Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, pp. 589-591 (1992).
    DOI: 10.7567/SSDM.1992.B-4-5