Yaguchi

論文 1993


  • 第6回半導体超構造国際会議(MSS6)参加報告
    矢口 裕之
    電子工業月報 Vol. 35, No. 12, pp. 69-77 (1993).
  • Metalorganic vapor phase epitaxy of GaP1-xNx alloys on GaP
    S. Miyoshi, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
    Applied Physics Letters Vol. 63, No. 25, pp. 3506-3508 (1993).
    DOI: 10.1063/1.110109
  • Self-Modulating Incorporation of Sb in Si/SiGe Superlattices During Molecular Beam Epitaxy
    K. Fujita, S. Fukatsu, N. Usami, H. Yaguchi, Y. Shiraki, and R. Ito
    Materials Science Forum Vol. 117-118, pp. 159-164 (1993).
    DOI: 10.4028/www.scientific.net/MSF.117-118.159
  • Self-modulating Sb incorporation in Si/SiGe superlattices during molecular beam epitaxial growth
    K. Fujita, S. Fukatsu, N. Usami, Y. Shiraki, H. Yaguchi, R. Ito and K. Nakagawa
    Surface Science Vol. 295, No. 3, pp. 335-339 (1993).
    DOI: 10.1016/0039-6028(93)90280-W
  • MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates
    M. Nagahara, S. Miyoshi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, pp. 113-115 (1993).
    DOI: 10.7567/SSDM.1993.D-1-4
  • Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy
    H. Yaguchi, K. Tai, K. Takemasa, K. Onabe, Y. Shiraki and R. Ito
    Extended Abstracts of the 1993 International Conference on Solid Stated Device and Materials, pp. 910-912 (1993).
    DOI: 10.7567/SSDM.1993.S-I-6-6
  • Is Low Temperature Growth the Solution to Abrupt S/Si1-xGex Interface Formation?
    S. Fukatsu, N. Usami, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito
    Journal of Crystal Growth Vol. 127, No. 1-4, pp. 401-405 (1993).
    DOI: 10.1016/0022-0248(93)90648-G
  • Intersubband absorption in n-type Si/Si1-xGex multiple quantum well structures formed by Sb segregant-assisted growth
    K. Fujita, S. Fukatsu, Y. Shiraki, H. Yaguchi and R. Ito
    Journal of Crystal Growth Vol. 127, No. 1-4, pp. 416-420 (1993).
    DOI: 10.1016/0022-0248(93)90651-C
  • Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures using circularly polarized photoluminescence excitation spectroscopy
    K. Ota, H. Yaguchi, K. Onabe, R. Ito, Y. Takahashi, K. Muraki and Y. Shiraki
    Applied Physics Letters Vol. 63, No. 7, pp. 946-948 (1993).
    DOI: 10.1063/1.109853
  • GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
    X. Zhang, K. Karaki, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 32, No. 6A, pp. L755-L757 (1993).
    DOI: 10.1143/JJAP.32.L755
  • Highly conductive p-type cubic GaN epitaxial films on GaAs
    S. Miyoshi, N. Ohkouchi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Institute of Physics Conference Series Vol. 129, pp. 79-84 (1993).
  • Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
    H. Yaguchi, X. Zhang, K. Ota, M. Nagahara, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Appled Physics Vol. 32, No. 1B, pp. 544-547 (1993).
    DOI: 10.1143/JJAP.32.544
  • Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs1-xPx Strained-Barrier Single Quantum Well Structures
    X. Zhang, K. Onabe, H. Yaguchi, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 32, No. 3B, pp. L375-L378 (1993).
    DOI: 10.1143/JJAP.32.L375