Yaguchi

論文 1994


  • Characterization of Ge/SiGe Strained-Barrier Quantum Well Structures Using Photoreflectance Spectroscopy
    H. Yaguchi, K. Tai, K. Takemasa, K. Onabe, R. Ito and Y. Shiraki
    Physical Review B, Vol. 49, No. 11, pp. 7394-7399 (1994).
    DOI: 10.1103/PhysRevB.49.7394
  • Formation of facetted heterointerfaces of cubic GaN grown on GaAs(001) by metalorganic vapor phase epitaxy
    N. Kuwano, K. Kobayashi, Y. Takeichi, K. Oki, S. Miyoshi, H. Yaguchi, K. Onabe, and Y. Shiraki
    Electron Microscopy Vol. 2A/2B, pp. 619-620 (1994).
  • Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties
    S. Miyoshi, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
    Journal of Crystal Growth Vol. 145, No. 1-4, pp. 87-92 (1994).
    DOI: 10.1016/0022-0248(94)91033-2
  • Effect of growth interruption on the interface flatness in metalorganic vapor phase epitaxy-grown GaAs/GaAsP heterostructures
    K. Ota, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
    Journal of Crystal Growth Vol. 145, No. 1-4, pp. 819-823 (1994).
    DOI: 10.1016/0022-0248(94)91148-7
  • Metalorganic vapor phase epitaxial growth and luminescence properties of GaAs/GaAsP quantum wires
    W. Pan, H. Yaguchi, K. Onabe, K. Wada, Y. Shiraki and R. Ito
    Journal of Crystal Growth Vol. 145, No. 1-4, pp. 702-706 (1994).
    DOI: 10.1016/0022-0248(94)91130-4
  • Surface orientation dependence of growth rate of Cubic GaN
    M. Nagahara, S. Miyoshi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Journal of Crystal Growth Vol. 145, No. 1-4, pp. 197-202 (1994).
    DOI: 10.1016/0022-0248(94)91050-2
  • Photoreflectance and Photoluminescence Study of Direct- and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells
    H. Yaguchi, S. Hashimoto, T. Sugita, Y. Hara, K. Onabe, Y. Shiraki and R. Ito
    Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, pp. 108-110 (1994).
    DOI: 10.7567/SSDM.1994.S-I-9-1
  • MOVPE growth of strained GaP1-xNx and GaP1-xNx/GaP quantum wells
    S. Miyoshi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Institute of Physics Conference Series Vol. 136, pp. 637-642 (1994).
  • Determination of band offsets in GaAsP/GaP strained-layer quantum well structures using photoreflectance and photoluminescence spectroscopy
    Y. Hara, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Institute of Physics Conference Series Vol. 136, pp. 361-366 (1994).
  • Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
    H. Yaguchi, K. Tai, K. Takemasa, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 33, 4B, pp. 2353-2356 (1994).
    DOI: 10.1143/JJAP.33.2353
  • Temperature dependence of photoluminescence linewidth in GaAs/GaAsP strained-layer quantum well structures
    X. Zhang, Y. Shiraki, H. Yaguchi, K. Onabe and R. Ito
    Journal of Vacuum Science and Technology B Vol. 12, No. 4, pp. 2293-2298 (1994).
    DOI: 10.1116/1.587755
  • Photoluminescence study of (111)-oriented GaAs/GaAsP strained-layer quantum well structure
    X. Zhang, K. Karaki, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
    Applied Physics Letters Vol. 64, No. 12, pp. 1555-1557 (1994).
    DOI: 10.1063/1.111991
  • Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
    N. Kuwano, K. Kobayashi, K. Oki, S. Miyoshi, H. Yaguchi, K. Onabe and Y. Shiraki
    Japanese Journal of Applied Physics Vol. 33, No. 6A, pp. 3415-3416 (1994).
    DOI: 10.1143/JJAP.33.3415
  • Valence-Subband Level Crossing in GaAs/GaAsP Strained-Barrier Quantum Well Structures Observed by Circularly Polarized Photoluminescence Excitation Spectroscopy
    H. Yaguchi, K. Ota, Y. Takahashi, K. Muraki, K. Onabe, Y. Shiraki and R. Ito
    Solid-State Electronics Vol. 37, No. 4-6, pp. 915-918 (1994).
    DOI: 10.1016/0038-1101(94)90325-5
  • Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
    M. Nagahara, S. Miyoshi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 33, No. 1B, pp. 694-697 (1994).
    DOI: 10.1143/JJAP.33.694
  • Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
    N. Kuwano, Y. Nagatomo, K. Kobayashi, K. Oki, S. Miyoshi, H. Yaguchi, K. Onabe and Y. Shiraki
    Japanese Journal of Applied Physics Vol. 33, No. 1A, pp. 18-22 (1994).
    DOI: 10.1143/JJAP.33.18