論文 2000


  • Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs1-xNx alloys using spectroscopic ellipsometry
    S. Matsumoto, H. Yaguchi, S. Kashiwase, T. Hashimoto, S. Yoshida, D. Aoki and K. Onabe
    Journal of Crystal Growth Vol. 221, No. 1-4, pp. 481-484 (2000).
    DOI: 10.1016/S0022-0248(00)00748-X
  • Optical properties of cubic GaN grown on 3C-SiC (100) substrates by metalorganic vapor phase epitaxy
    J. Wu, H. Yaguchi, B. P. Zhang, Y. Segawa, K. Onabe and Y. Shiraki
    Physica Status Solidi A Vol. 180, No. 1, pp. 403-407 (2000).
    DOI: 10.1002/1521-396X(200007)180:1<403::AID-PSSA403>3.0.CO;2-A
  • Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
    T. Iida, Y. Tomioka, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, H. Okumura and S. Yoshida
    Japanese Journal of Applied Physics Vol. 39, No. 10B, pp. L1054-L1056 (2000).
    DOI: 10.1143/JJAP.39.L1054
  • Characterization of oxide films on SiC by spectroscopic ellipsometer
    T. Iida, Y. Tomioka, K. Matsunaka, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, H. Okumura and S. Yoshida
    Extended Abstracts of 1st International Workshop on Ultra-Low-Loss Power Device Technology, pp. 203-204 (2000).
  • Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111) B substrates by MOVPE
    T. Tsujikawa, S. Mori, H. Watanabe, M. Yoshita, H. Akiyama, R. van Dalen, K. Onabe, H. Yaguchi, Y. Shiraki and R. Ito
    Physica E Vol. 7, No. 3, pp. 308-316 (2000).
    DOI: 10.1016/S1386-9477(99)00331-8
  • Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
    T. Suzuki, H. Yaguchi, H. Okumura, Y. Ishida and S. Yoshida
    Japanese Journal of Applied Physics Vol. 39, No. 6A, pp. L497-L499 (2000).
    DOI: 10.1143/JJAP.39.L497
  • Second-Harmonic Generation from GaP/AlP Multilayers on GaP (111) Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
    M. Sato, H. Yaguchi, I. Shoji, K. Onabe, R. Ito, Y. Shiraki, S. Nakagawa and N. Yamada
    Japanese Journal of Applied Physics Vol. 39, No. 4B, pp. L334-L336 (2000).
    DOI: 10.1143/JJAP.39.L334