論文 2001

• Composition Analysis of SiO₂/SiC Interfaces by Electron Spectroscopic Measurements Using Slope Shaped Oxide Films
  Y. Hijikata, H. Yaguchi, M. Yoshikawa and S. Yoshida
  Applied Surface Science Vol. 184, No. 1-4, pp. 161-166 (2001).
  DOI: 10.1016/S0169-4332(01)00491-3
• Spectroscopic Ellipsometry Study on the Electronic Structure near the Absorption Edge of GaAsN Alloys
  H. Yaguchi, S. Matsumoto, Y. Hijikata, S. Yoshida, T. Maeda, M. Ogura, D. Aoki and K. Onabe
  Physica Status Solidi B Vol. 228, No. 1, pp. 269-272 (2001).
  DOI: 10.1002/1521-3951(200111)228:1<269::AID-PSSB269>3.0.CO;2-3
• Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys
  H. Yaguchi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki and K. Onabe
  Physica Status Solidi B Vol. 228, No. 1, pp. 273-277 (2001).
  DOI: 10.1002/1521-3951(200111)228:1<273::AID-PSSB273>3.0.CO;2-N
• Temperature Dependence of Excitonic Gamma_c-Gamma_v Transition Energies of Ga_xIn_1-xP Crystals
  Y. Ishitani, H. Yaguchi and Y. Shiraki
  Japanese Journal of Applied Physics Vol. 40, No. 3A, pp. 1183-1187 (2001).
  DOI: 10.1143/JJAP.40.1183