論文 2002

• X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
  Y. Hijikata, H. Yaguchi, M. Yoshikawa and S. Yoshida
  Materials Science Forum Vol. 389-393, No. 2, pp. 1033-1036 (2002).
  DOI: 10.4028/www.scientific.net/MSF.389-393.1033
• Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
  Y. Tomioka, T. Iida, M. Midorikawa, H. Tukada, K. Yoshimoto, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, R. Kosugi and S. Yoshida
  Materials Science Forum Vol. 389-393, No. 2, pp. 1029-1032 (2002).
  DOI: 10.4028/www.scientific.net/MSF.389-393.1029
• Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
  H. Yaguchi, K. Narita, Y. Hijikata, S. Yoshida, S. Nakashima and N. Oyanagi
  Materials Science Forum Vol. 389-393, pp. 621-624 (2002).
  DOI: 10.4028/www.scientific.net/MSF.389-393.621
• Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
  T. Iida, Y. Tomioka, K. Yoshimoto, M. Midorikawa, H. Tukada, M. Orihara, Y. Hijikata, H. Yaguchi, M. Yoshikawa, H. Itoh, Y. Ishida and S. Yoshida
  Japanese Journal of Applied Physics Vol. 41, No. 2A, pp. 800-804 (2002).
  DOI: 10.1143/JJAP.41.800
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution
  N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, H. Yaguchi, Y. Murakami and K. Nakajima
  Japanese Journal of Applied Physics Vol. 41, No. 1A/B, pp. L37-L39 (2002).
  DOI: 10.1143/JJAP.41.L37