論文 2004

• Epitaxial growth of hexagonal and cubic InN films
  K. Nishida, Y. Kitamura, Y. Hijikata, H. Yaguchi and S. Yoshida
  Physica Status Solidi B Vol. 241, No. 12, pp. 2839-2842 (2004).
  DOI: 10.1002/pssb.200405049
• Characterization of carrier concentration and mobility in n-type SiC wafers using infrared reflectance spectroscopy
  K. Narita, Y. Hijikata, H. Yaguchi, S. Yoshida and S. Nakashima
  Japanese Journal of Applied Physics Vol. 43, No. 8A, pp. 5151-5156 (2004).
  DOI: 10.1143/JJAP.43.5151
• Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy
  K. Narita, Y. Hijikata, H. Yaguchi, S. Yoshida, J. Senzaki, and S. Nakashima
  Materials Science Forum Vols. 457-460 (II), pp. 905-908 (2004).
  DOI: 10.4028/www.scientific.net/MSF.457-460.905
• Photoemission spectroscopic studies on oxide/SiC interfaces formed by dry and pyrogenic oxidation
  Y. Hijikata, H. Yaguchi, Y. Ishida, M. Yoshikawa, T. Kamiya and S. Yoshida
  Materials Science Forum Vols. 457-460 (II), pp. 1341-1344 (2004).
  DOI: 10.4028/www.scientific.net/MSF.457-460.1341