Yaguchi

論文 2005


  • Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy
    H. Yaguchi, Y. Kitamura, K. Nishida, Y. Iwahashi, Y. Hijikata, and S. Yoshida
    Physica Status Solidi C Vol. 2, No. 7, pp. 2267-2270 (2005).
    DOI: 10.1002/pssc.200461386
  • Effect of Ar Post-Oxidation Annealing on Oxide-4H-SiC Interfaces Studied by Capacitance to Voltage Measurements and Photoemission Spectroscopy
    Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Ishida, and M. Yoshikawa
    Journal of Vacuum Science and Technology A Vol. 23, No. 2, pp. 298-303 (2005).
    DOI: 10.1116/1.1865153
  • Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements using Synchrotron Radiation
    Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, and T. Hattori
    Materials Science Forum Vol. 483-485, pp. 585-588 (2005).
    DOI: 10.4028/www.scientific.net/MSF.483-485.585