論文 2006

• Simultaneous Determination of Carrier Concentrations, Mobilities and Thickness of SiC Homo-Epilayers Using Infrared Reflectance Spectroscopy
  Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  Japanese Journal of Applied Physics, Vol. 45, No. 46, pp. L1226-L1229 (2006).
  DOI: 10.1143/JJAP.45.L1226
• Characterization of Oxide Films on 4H-SiC Epitaxial (000-1) Faces by High-Energy-Resolution Photoemission Spectroscopy: Comparison between Wet and Dry Oxidation
  Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasutaka Takata, Keisuke Kobayashi, Hiroshi Nohira, and Takeo Hattori
  Journal of Applied Physics, Vol. 100, No. 5, pp. 053710-1-7 (2006).
  DOI: 10.1063/1.2345471
• Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
  Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, and T. Hattori
  Materials Science Forum, Vol. 527-529, pp. 1003-1006 (2006).
  DOI: 10.4028/www.scientific.net/MSF.527-529.1003
• Real Time Observation of SiC Oxidation using In-Situ Ellipsometer
  K. Kakubari, R. Kuboki, Y. Hijikata, H. Yaguchi, and S. Yoshida
  Materials Science Forum, Vol. 527-529, pp. 1031-1034 (2006).
  DOI: 10.4028/www.scientific.net/MSF.527-529.1031
• RF-MBE growth of cubic InN films on MgO (001) substrates
  Y. Iwahashi, H. Yaguchi, A. Nishimoto, M. Orihara, Y. Hijikata, S. Yoshida
  Physica Status Solidi C Vol. 3, No. 6, pp. 1515-1518 (2006).
  DOI: 10.1002/pssc.200565312
• Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys
  H. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, N. Usami, D. Aoki, and K. Onabe
  Physica Status Solidi C Vol. 3, No. 6, pp. 1907-1910 (2006).
  DOI: 10.1002/pssc.200565372