論文 2008

• Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
  T. Yamamoto, Y. Hijikata, H. Yaguchi, and S. Yoshida
  Japanese Journal of Applied Physics Vol. 47, No. 10R, pp. 7803-7806 (2008).
  DOI: 10.1143/JJAP.47.7803
• High Resolution X-ray Diffraction and Raman Scattering Studies of Cubic-phase InN Films Grown by MBE
  S. Kuntharin, S. Sanorpim, H. Yaguchi, Y. Iwahashi, M. Orihara, Y. Hijakata and S. Yoshida
  Advanced Materials Research Vols. 55-57, pp. 773-776 (2008).
  DOI: 10.4028/www.scientific.net/AMR.55-57.773
• Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs
  Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, F. Nakajima, R. Katayama, K. Onabe
  Physica E Vol. 40, No. 6, pp. 2110-2112 (2008).
  DOI: 10.1016/j.physe.2007.10.047
• Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers
  G. Shikata, S. Hirano, T. Inoue, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  Physica Status Solidi C Vol. 5, No. 6, pp. 1808-1810 (2008).
  DOI: 10.1002/pssc.200778662
• Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy
  S. Hirano, T. Inoue, G. Shikata, M. Orihara, Y. Hijikata, H. Yaguchi, S. Yoshida, and Y. Hirabayashi
  Physica Status Solidi C Vol. 5, No. 6, pp. 1730-1732 (2008).
  DOI: 10.1002/pssc.200778606
• Photoluminescence of cubic InN films on MgO (001) substrates
  T. Inoue , Y. Iwahashi , S. Oishi, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  Physica Status Solidi C Vol. 5, No. 6, pp. 1579-1581 (2008).
  DOI: 10.1002/pssc.200778505
• 局所ドーピング半導体による単一光子発生に関する研究
  矢口 裕之
  旭硝子財団助成研究成果報告 pp. 1-7 (2008).