Presentation 1991

• (In Japanese) 表面自由エネルギー制御による急峻な半導体ヘテロ界面の形成
  Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
  電気学会電子材料研究会 (EMF-91-11)
  December 11, 1991
• (In Japanese) Raman Scattering in Cubic GaN on GaAs
  Hiroyuki Yaguchi, Yoshiki Nitta, Kentaro Onabe, Susumu Fukatsu, Yasuhiro Shiraki, Ryoichi Ito
  応用物理学会第52回講演会 (9a X8) (Okayama, Japan)
  October 9, 1991
• (In Japanese) SiGe超格子中Sbのドーピング自己変調性
  Ken Fujita, Susumu Futatsu, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
  応用物理学会第52回講演会 (11p Z6) (Okayama, Japan)
  October 11, 1991
• (In Japanese) Si MBE成長におけるSbの非平衡表面偏析の濃度依存性
  Susumu Fukatsu , Ken Fujikta, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
  応用物理学会第52回講演会 (11p Z7) (Okayama, Japan)
  October 11, 1991
• (In Japanese) Glide Velocity of Dislocations in Heteroepitaxial Thin Films
  Yoshifumi Yamashita, Koji Maeda, Yutaka Mera, Hiroyuki Yaguchi, Yasuhiro Shiraki
  The Physical Society of Japan 46th Annual Meeting (28p-K-10) (Sapporo, Japan)
  September 28, 1991
• Atomistic Picture of Interfacial Mixing in the Si/Ge Hetrostructures
  Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
  5th Conference on Modulated Semiconductor Structures (MSS-5) (Nara, Japan)
  July 1991
• Kinetics of Ge Segregation in the Presence of Sb during Molecular Beam Epitaxy
  Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
  4th International Conference on Molecular Beam Epitaxy (Anaheim, USA)
  April 1991
• Suppression of Si/Ge Interfacial Mixing with Sb Deposition in Strained-Layer Superlattices
  Ken Fujita, Susumu Fukatsu, Hiroyuki Yaguchi, Takayuki Igarashi, Yasuhiro Shiraki and Ryoichi Ito
  4th International Conference on Molecular Beam Epitaxy (Anaheim, USA)
  April 1991
• Initial Oxidation of MBE-Grown Si Surfaces
  Takayuki Igarashi, Hiroyuki Yaguchi, Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki, Takeo Hattori and Ryoichi Ito
  4th International Conference on Molecular Beam Epitaxy (Anaheim, USA)
  April 1991
• Structural Characterization of Si/Ge Heterointerfaces by Secondary Ion Mass Spectroscopy
  Susumu Fukatsu, Hiroyuki Yaguchi, Ken Fujita, Yasuhiro Shiraki and Ryoichi Ito
  4th International Conference on Molecular Beam Epitaxy (Anaheim, USA)
  April 1991
• (In Japanese) B delta-doping in Ge using HBO₂
  Hiroyuki Yaguchi, Takayuki Igarashi, Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki, Ryoichi Ito
  応用物理学会第38回連合講演会 (29pZF11) (Hiratsuka, Japan)
  March 29, 1991
• (In Japanese) Si_1-xGe_x/Siエピタキシャル膜中のミスフィット転位の 上昇運動のその場観察
  Yoshifumi Yamashita, Yutaka Mera, Koji Maeda, Hiroyuki Yaguchi, Ken Fujita, Yasuhiro Shiraki
  応用物理学会第38回連合講演会 (30aZF2) (Hiratsuka, Japan)
  March 30, 1991
• (In Japanese) Initial oxidation of MBE-grown Si surfaces
  Takayuki Igarashi, Yoshiya Tamura, Hiroyuki Yaguchi, Ken Fujita, Susumu Fukatsu, Takeo Hattori, Yasuhiro Shiraki, Ryoichi Ito
  応用物理学会第38回連合講演会 (29aSY8) (Hiratsuka, Japan)
  March 29, 1991
• (In Japanese) SIMSを用いたSiGe界面における急峻性評価
  Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
  応用物理学会第38回連合講演会 (30aZF8) (Hiratsuka, Japan)
  March 30, 1991
• (In Japanese) Si MBEにおけるGeの表面偏析の解析
  Susumu Futatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
  応用物理学会第38回連合講演会 (30aZF9) (Hiratsuka, Japan)
  March 30, 1991
• (In Japanese) SbによるGeの表面偏析抑制の機構
  Ken Fujita, Susumu Fukatsu, Hiroyuki Yaguchi, Takayuki Igarashi, Yasuhiro Shiraki, Ryoichi Ito
  応用物理学会第38回連合講演会 (30aZF12) (Hiratsuka, Japan)
  March 30, 1991