Presentation 2022

• Effects of carrier blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells
  Shuhei Yagi, Shun Numata, Yasushi Shoji, Yoshitaka Okada, Hiroyuki Yaguchi
  33rd International Photovoltaic Science and Engineering Conference (TuO-42-04) (Nagoya, Japan)
  November 15, 2022
• Investigation of self-assembled monolayer (SAM) as the hole transport layers in the perovskite solar cells
  Takuma Chigira, Takashi Funaki, Hiroyuki Yaguchi, Atsushi Kogo, Masayuki Chikamatsu, Takurou N Murakami
  33rd International Photovoltaic Science and Engineering Conference (TuP-41-40) (Nagoya, Japan)
  November 15, 2022
• Photocurrent enhancement by below bandgap excitation in GaPN
  Abdul Qayoom, Sanjida Ferdous, Shuhei Yagi, Hiroyuki Yaguchi
  33rd International Photovoltaic Science and Engineering Conference (TuP-42-02) (Nagoya, Japan)
  November 15, 2022
• Performance Enhancement on Perovskite Solar Cells with Self-Assembled Monolayer as the Hole Transport Materials
  Takuma Chigira, Takashi Funaki, Hiroyuki Yaguchi, Atsushi Kogo, Masayuki Chikamatsu,Takurou N. Murakami
  The 95th Japan Society of Colour Material (JSCM) Anniversary Conference (1A12) (Tokyo, Japan)
  October 25, 2022
• Effects of Mg doping into the core layer in AlGaN deep-UV LD structures
  Yuri Itokazu, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
  International Workshop on Nitride Semiconductors 2022 (AT 177) (Berlin, Germany)
  October 13, 2022
• Current injection emission by high current density over 300 kA/cm² from 280 nm LD structure using polarization doped p-cladding layer
  Fumiya Chugenji, Noritoshi Maeda, Yuri Itokazu, M. Ajmal Khan, Yasushi Iwaisako, Hiroyuki Yaguchi, Hideki Hirayama
  International Workshop on Nitride Semiconductors 2022 (Berlin, Germany)
  October 11, 2022
• Significant Improvement of Injection Efficiency in Deep-UV LD Structures by Light Mg Doping in p-Core Layer
  Yuri Itokazu, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
  2022 International Conference on Solid State Devices and Materials (Chiba, Japan)
  September 28, 2022
• (In Japanese) Effect of Mg doping in the core layer in AlGaN-based DUV LD structures
  Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Hiroyuki Yaguchi, Hideki Hirayama
  The 83rd JSAP Autumn Meeting 2022 (22p-C200-7) (Sendai, Japan)
  September 22, 2022
• (In Japanese) Growth of 280 nm band AlGaN LD Structures with Reduced Gradient Polarization Doped p-Cladding Layer
  Fumiya Chugenji, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
  The 83rd JSAP Autumn Meeting 2022 (22p-C200-8) (Sendai, Japan)
  September 22, 2022
• (In Japanese) Electronic structure analysis of InSb_1-xN_x alloys by first-principles calculation
  Sachie Fujikawa, Yoshitaka Fujiawara, Hiroyuki Yaguchi
  The 83rd JSAP Autumn Meeting 2022 (22p-P10-2) (Sendai, Japan)
  September 22, 2022
• (In Japanese) Investigation of self-assembled monolayer (SAM) as the hole transport layers in the perovskite solar cells
  Takuma Chigira, Takashi Funaki, Hiroyuki Yaguchi, Atsushi Kogo, Masayuki Chikamatsu, Takurou Murakami
  The 83rd JSAP Autumn Meeting 2022 (22p-B103-3) (Sendai, Japan)
  September 22, 2022
• (In Japanese) Temperature dependence of photoluminescence intensity decay by laser irradiation of GaPN alloy
  Yoshiyasu Yagihashi, Kengo Takamiya, Norihiko Kamata, Shuhei Yagi, Hiroyuki Yaguchi
  The 83rd JSAP Autumn Meeting 2022 (22p-P12-2) (Sendai, Japan)
  September 22, 2022
• (In Japanese) Time-Resolved Photoluminescence Study of the Influence of Superlattice Structures on the Emission from AlGaN Quantum Wells
  Shohei Kamada, Norihiko Kamata, Shuhei Yagi, Hiroyuki Yaguchi
  The 83rd JSAP Autumn Meeting 2022 (22p-P12-3) (Sendai, Japan)
  September 22, 2022
• First-principles study of the band tail states and optical properties of gallium phosphide nitride alloys
  Hiroyuki Yaguchi
  35th International Conference on the Physics of Semiconductors 2022 (Sydney, Australia)
  June 30, 2022
• Arsenic composition dependence of up-conversion luminescence of gallium phosphide arsenide nitride alloys
  Kengo Takamiya, Sultan Md. Zamil, Shuhei Yagi, and Hiroyuki Yaguchi
  35th International Conference on the Physics of Semiconductors 2022 (Sydney, Australia)
  June 28, 2022
• (In Japanese) Excitation Power Dependence of Emission Lines from Er Doped GaAs
  Shunpei Ito, Kengo Takamiya, Masataka Kobayashi, Shuhei Yagi, Hidefumi Akiyama, Hiroyuki Yaguchi
  The 69th JSAP Spring Meeting 2022 (23p-P07-6) (Sagamihara, Japan)
  March 23, 2022
• (In Japanese) Fabrication of 280 nm LD structures using polarizaitn doped p-type layers and observation of high current injection emission
  Fumiya Chugenji, Noritoshi Maeda, Yuri Itokazu, M. Ajmal Khan, Yasushi Iwaisako, Hiroyuki Yaguchi, Hideki Hirayama
  The 69th JSAP Spring Meeting 2022 (26p-E203-9) (Sagamihara, Japan)
  March 26, 2022
• (In Japanese) Wavelength dependence of net modal gain of AlGaN-based DUV laser diode
  Yuri Itokazu, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
  The 69th JSAP Spring Meeting 2022 (26p-E203-10) (Sagamihara, Japan)
  March 26, 2022