Publication 2008


  • Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
    T. Yamamoto, Y. Hijikata, H. Yaguchi, and S. Yoshida
    Japanese Journal of Applied Physics Vol. 47, No. 10R, pp. 7803-7806 (2008).
    DOI: 10.1143/JJAP.47.7803
  • High Resolution X-ray Diffraction and Raman Scattering Studies of Cubic-phase InN Films Grown by MBE
    S. Kuntharin, S. Sanorpim, H. Yaguchi, Y. Iwahashi, M. Orihara, Y. Hijakata and S. Yoshida
    Advanced Materials Research Vols. 55-57, pp. 773-776 (2008).
    DOI: 10.4028/www.scientific.net/AMR.55-57.773
  • Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs
    Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, F. Nakajima, R. Katayama, K. Onabe
    Physica E Vol. 40, No. 6, pp. 2110-2112 (2008).
    DOI: 10.1016/j.physe.2007.10.047
  • Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers
    G. Shikata, S. Hirano, T. Inoue, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
    Physica Status Solidi C Vol. 5, No. 6, pp. 1808-1810 (2008).
    DOI: 10.1002/pssc.200778662
  • Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy
    S. Hirano, T. Inoue, G. Shikata, M. Orihara, Y. Hijikata, H. Yaguchi, S. Yoshida, and Y. Hirabayashi
    Physica Status Solidi C Vol. 5, No. 6, pp. 1730-1732 (2008).
    DOI: 10.1002/pssc.200778606
  • Photoluminescence of cubic InN films on MgO (001) substrates
    T. Inoue , Y. Iwahashi , S. Oishi, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
    Physica Status Solidi C Vol. 5, No. 6, pp. 1579-1581 (2008).
    DOI: 10.1002/pssc.200778505
  • (In Japanese) Single photon emission from locally doped semiconductors
    Hiroyuki Yaguchi
    Reports of research assisted by the Asahi Glass Foundation pp. 1-7 (2008).