Yaguchi

Presentation 2018


  • Evaluation of DC sputtered AlN template by wet KOH etching
    Y. Mogami, S. Motegi, A. Ogawa, K. Osaki, Y. Tanioka, A. Maeoka, M. Jo, N. Maeda, H. Yaguchi, and H. Hirayama
    International Workshop on Nitride Semiconductors (GR11-4) (Kanazawa, Japan)
    November 15, 2018
  • Carrier recombination processes via intermediate band in GaPN revealed by two-wavelength escited photoluminescence
    G. Negishi, Md Dulal Haque, N. Kamata, Z. Honda, and H. Yaguchi
    International Workshop on Nitride Semiconductors (MoP-CR-10) (Kanazawa, Japan) I
    November 12, 2018
  • Growth temperature depencence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates
    K. Okura, K. Takamiya, S. Yagi, and H. Yaguchi
    International Workshop on Nitride Semiconductors (TuP-GR-11) (Kanazawa, Japan)
    November 13, 2018
  • (In Japanese) ルブレン単結晶上の有機鉛ペロブスカイト結晶成長
    阿内 悠人, 宮寺 哲彦, 小金澤 智之, 近松 真之, 吉田 郵司, 矢口 裕之
    AIST 太陽光発電研究 成果報告会 2018 (Tsukuba, Japan)
    November 14, 2018
  • (In Japanese) DCスパッタ法AlNの高温アニール処理とUVCLEDへのアプローチ
    茂手木 省吾, 最上 耀介, 大澤 篤史, 尾﨑 一人, 谷岡 千丈, 前岡 淳史, 定 昌史, 前田 哲利, 矢口 裕之, 平山　秀樹
    日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会 第110回研究会・特別公開シンポジウム (Tokyo, Japan)
    September 27, 2018
  • (In Japanese) Two-wavelength excitation photoluminescence study of upconversion luminescence from GaPN alloys
    Wataru Takahashi, Kengo Takamiya, Shuhei Yagi, Yuji Hazama, Hidefumi Akiyama, Hiroyuki Yaguchi, Norihiko Kamata
    The 79th JSAP Autumn Meeting 2018 (18p-234B-4) (Nagoya, Japan)
    September 18, 2018
  • (In Japanese) First-principles study of the influence of N atomic configration on the band structure of GaAsN
    Yuta Tsukahara, Shuhei Yagi, Hiroyuki Yaguchi
    The 79th JSAP Autumn Meeting 2018 (18p-234B-6) (Nagoya, Japan)
    September 18, 2018
  • (In Japanese) Growth of N-polar GaN on 4H-SiC (000-1) substrate by RF-MBE
    Ryo Sugiura, Kengo Takamiya, Syuhei Yagi, Hiroyuki Yaguchi
    The 79th JSAP Autumn Meeting 2018 (19p-PA4-14) (Nagoya, Japan)
    September 19, 2018
  • (In Japanese) Growth condition dependence of cubic GaN step structures for the growth of ordered InN dot arrays
    Kazumasa Okura, Kengo Takamiya, Shuhei Yagi, Hiroyuki Yaguch
    The 79th JSAP Autumn Meeting 2018 (19p-PA4-25) (Nagoya, Japan)
    September 19, 2018
  • (In Japanese) Morphological change of AlN film on sapphire by annealing
    Shogo Motegi, Yosuke Mogami, Atsushi Osawa, kazuo Osaki, Yukitake Tanioka, Atsushi Maeoka, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
    The 79th JSAP Autumn Meeting 2018 (21p-146-10) (Nagoya, Japan)
    September 21, 2018
  • (In Japanese) AlN template using DC sputtered AlN films with high-temperature annealing
    Yosuke Mogami, Shogo Motegi, Atsushi Osawa, Kazuto Osaki, Yukitake Tanioka, Atsushi Maeoka, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
    The 79th JSAP Autumn Meeting 2018 (21p-146-11) (Nagoya, Japan)
    September 21, 2018
  • Epitaxial growth of organolead-halide perovskite on rubrene single crystals
    Y. Auchi, T. Miyadera, T. Koganezawa, H. Yaguchi, M. Chikamatsu, Y. Yoshida
    2018 International Conference on Solid State Devices and Materiials (F4-04) (Tokyo, Japan)
    September 12, 2018
  • (In Japanese) Crystal Growth control of organolead halide perovskite
    Tetsuhiko, Yuto Auchu, Tomoyuki Koganezawa, Hiroyuki Yaguchi, Yuji Yoshida, Masayuki Chikamatsu
    2018 67th Symposium on Macromolecules (2W13) (Sapporo, Japan)　
    September 13, 2018
  • Evolution of morphology and crystalline quality of sputtered AlN films with high-temperature annealing
    Y. Mogami, S. Motegi, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, M. Jo, N. Maeda, H. Yaguchi and H. Hirayama
    7th International Symposium on Growth of III-Nitrides (ISGN-7) (Th5.3) (Warsaw, Poland)
    August 9, 2018
  • Growth of InGaAs:N δ-doped superlattices for multi-junction solar cells
    S. Umeda, S. Yagi, N. Miyashita, Y. Okada, H. Yaguchi
    7th World Conference on Photovoltaic Energy Conversion (WCPEC-7) (B19 595) (Waikoloa, Hawaii, USA)
    June 13, 2018
  • (In Japanese) Annealing Effect on the Luminescence Properties of Er Doped GaAs Grown by Molecular Beam Epitaxy
    Daisuke Igarashi, Kengo Takamiya, Takashi Ito, Shuhei Yagi, Hidehumi Akiyama, Hiroyuki Yaguchi
    The 65th JSAP Spring Meeting (18p-P8-12) (Tokyo, Japan)
    March 18, 2018