Yaguchi

Presentation 2014


  • Taming Spins in a Band-gap Engineered Germanium by Light Touch
    S. Hayashi, T. Tayagaki, Y. Okawa, Y. Yasutake, H. Yaguchi, Y. Kanemitsu, and S. Fukatsu
    2014 Workshop on Innovative Nanoscale Devices and Systems (Hawaii, USA)
    December 3, 2014
  • Molecular Beam Epitaxy Growth of Intermediate Band Materials Based on GaAs:N δ-Doped Superlattices
    T. Suzuki, K. Osada, S. Yagi, S. Naito, Y. Hijikata, Y. Okada, and H. Yaguchi
    6th World Conference on Photovoltaic Energy Conversion (1TuO.7.4) (Kyoto, Japan)
    November 25, 2014
  • Control of Intermediate Band Configuration in GaAs:N δ-doped Superlattice
    K. Osada, T, Suzuki, S. Yagi, S. Naito, Y. Shoji, Y. Okada, Y. Hijikata, and H. Yaguchi
    6th World Conference on Photovoltaic Energy Conversion (1WePo.1.9) (Kyoto, Japan)
    November 26, 2014
  • (In Japanese) In -situ 分光エリプソメータによるSiC酸化過程の面方位依存性測定 (II)
    後藤大祐, 八木修平, 土方泰斗, 矢口裕之
    先進パワー半導体分科会 第 1回講演会 (P-53) (Nagoya, Japan)
    November 19, 2014
  • (In Japanese) フォトルミネッセンス法による4H -SiCエピ層中の酸化誘因欠陥観察 宮野祐太郎, 八木修平, 土方泰斗, 矢口裕之
    先進パワー半導体分科会 第 1回講演会 (P-89) (Nagoya, Japan)
    November 19, 2014
  • Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
    Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi
    10th Europian Concerence on Silicon Carbide and Related Materilas (We-P-44) (Grenoble, France)
    September 24, 2014
  • Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
    D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi
    10th Europian Concerence on Silicon Carbide and Related Materilas (We-P-58) (Grenoble, France)
    September 24, 2014
  • (In Japanese) Time-resolved circular-polarized magneto-photoluminescence of Ge
    Yuhsuke Yasutake, Hiroyuki Yaguchi, Susumu Futatsu
    The 75th JSAP Autumn Meeting 2014 (17p-PA3-7) (Sapporo, Japan)
    September 17, 2014
  • (In Japanese) MBE Growth of GaAs:N δ-Doped Superlattices for Intermediate Band Solar Cells
    Tomoya Suzuki, Kazuki Osada, Shuhei Yagi, Shunya Naito, Yasuto Hijikata, Yoshitaka Okada, Hiroyuki Yaguchi
    The 75th JSAP Autumn Meeting 2014 (19p-PB3-10) (Sapporo, Japan)
    September 19, 2014
  • (In Japanese) Variation of oxide growth rate by introducing Ar annealing to oxidation of SiC
    Ryotaro Konno, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 75th JSAP Autumn Meeting 2014 (19a-PB5-11) (Sapporo, Japan)
    September 19, 2014
  • (In Japanese) Energy Control of Intermediate Band structures in GaAs:N δ-doped Superlattices
    Kazuki Osada, Tomoya Suzuki, Shuhei Yagi, Shunya Naito, Yasushi Shoji, Yoshitaka Okada, Yasuto Hijikata, Hiroyuki Yaguchi
    The 75th JSAP Autumn Meeting 2014 (19a-S1-6) (Sapporo, Japan)
    September 19, 2014
  • Parallel-Antiparallel Spin Orientation Control In The Conduction Band Valleys Of Ge
    S. Hayashi, T. Tayagaki, Y. Okawa, Y. Yasutake, H. Yaguchi, Y. Kanemitsu, S. Fukatsu
    Europian Materials Research Society 2014 Fall Meeting (8 2) (Warsaw, Poland)
    September 16, 2014
  • (In Japanese) 二波長励起PLによるGaPN混晶の光学特性評価
    末次 麻希子, A. Z. M. Touhidul Islam, 花岡 司, 福田 武司, 鎌田 憲彦, 八木 修平, 矢口 裕之
    平成26年度(第47回)照明学会全国大会 (10-3) (Saitama, Japan)
    September 5, 2014
  • Luminescence and Quenching Properties in GaPN Revealed by Below-Gap Excitation
    M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata, S. Yagi, and H. Yaguchi
    The 14th International Symposium on the Science and Technology of Lighting (CP16) (Como, Italy)
    June 23, 2014
  • Resonant tunneling of electrons through cubic-InN quantum dots embedded in GaN
    S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, H. Yaguchi
    The 41st International Symposium on Compound Semiconductors (P45) (Montpellier, France)
    May 12, 2014
  • Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well
    Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
    The 41st International Symposium on Compound Semiconductors (P48) (Montpellier, France)
    May 12, 2014
  • (In Japanese) Observations of the intermediate band in GaPN alloys by two-wavelength excited photoluminescence
    Makiko Suetsugu, Touhidul Islam, Naoki Murakoshi, Tsukasa Hanaoka, Norihiko Kamata, Hiroyuki Yaguchi
    The 61st JSAP Spring Meeting 2014 (18p-E11-2) (Sagamihara, Japan) March 18, 2014
  • (In Japanese) Growth of GaN layers on GaAs(110) by RF-MBE
    Takeshi Ikarashi, Misao Orihara, Syuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Ryuji Katayama, Hiroyuki Yaguchi
    The 61st JSAP Spring Meeting 2014 (20a-PG1-15) (Sagamihara, Japan) March 20, 2014