Presentation 2019
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Crystal Growth Dynamics of CH3NH3PbI3 in Vacuum Deposition Process
T. Miyadera, Y. Auchi, K. Yamanoto, N. Ohashi, T. Koganezawa, H. Yaguchi, Y. Yoshida, M. Chikamatsu
Materials Research Meeting 2019 (G3-13-P16) (Yokohama, Japan)
December 13, 2019
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(In Japanese)
DCスパッタAlNテンプレートを用いたUVC-LEDの進展
Y. Mogami, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, M. Jo, N. Maeda, H. Yaguchi, H. Hirayama
IEICE Electonics Society Laser and Quantum Electronics
(LQE2019-96) (Hamamatsu, Japan)
November 22, 2019
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Fabrication of UVC AlGaN LEDs on DC-sputtered AlN templates with hightemperature
annealing
Y. Mogami, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, Y. Itokazu,
S. Kuwaba, M. Jo, N. Maeda, H. Yaguchi, and H. Hirayama
The 9th Asia-Pacific Workshop on Widegap Semiconductors (MoP-OD-13) (Onna-son, Okinawa, Japan)
November 11, 2019
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(In Japanese)
Crystal orientation control of organolead halide pervskite by vacuum process
Tetsuhiko Miyadera, Yuto Auchi, Kohei Yamamoto, Noboru Ohashi, Tomoyuki Koganezawa, Hiroyuki Yaguchi, Yuji Yoshida, Masayuki Chikamatsu
2019 68th Symposium on Macromolecules
(2U13) (Fukui, Japan)
September 26, 2019
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Photoluminescence Intensity Change of GaPN by Laser Irradiation
Sultan Md. Zamil, A. Shiroma, S. Yagi, K. Takamiya, and H. Yaguchi
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
(P-12) (Kobe, Japan)
September 25, 2019
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Upconversion Luminescence from GaPN Alloys with Various N Compositions
K. Takamiya, W. Takahashi, S. Yagi, N. Kamata, Y. Hazama, H. Akiyama, and H. Yaguchi
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
(P-24) (Kobe, Japan)
September 25, 2019
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Fabrication of Cubic InN Nanowires on GaN V-Groove Structures
Y. Nishimura, S. Yagi, and H. Yaguchi
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
(P-25) (Kobe, Japan)
September 25, 2019
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Growth of InN nanocolumns using a cubic GaN interlayer by RF-MBE
R. Onuma, S. Yagi, and H. Yaguchi
7th International Workshop on Eptaxial Growth and Fundamental Properties of Semiconductor Nanostructures
(P-26) (Kobe, Japan)
September 25, 2019
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Laser Induced Degradation of Photoluminescence Intensity in GaPN
Md Zamil Sultan, A. Shiroma, S. Yagi, K. Takamiya, H. Yaguchi
The 80th JSAP Autumn Meeting 2019 (18a-B31-5) (Sapporo, Japan)
September 18, 2019
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(In Japanese)
Electrical characterization of InGaAs:N δ-doped superlattices
Ryuji Yoneno, Naoya Miyashita, Yoshitaka Okada, Shuhei Yagi, Hiroyuki Yaguchi
The 80th JSAP Autumn Meeting 2019 (18a-B31-6) (Sapporo, Japan)
September 18, 2019
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(In Japanese)
Biexciton luminescence from individual isoelectronic traps in N-doped GaAs grown on (111) substrates
Shouhei Takaoka, Kengo Takamiya, Shuhei Yagi, Yuji Hazama, Hidefumi Akiyama, Hiroyuki Yaguchi
The 80th JSAP Autumn Meeting 2019 (18a-B31-7) (Sapporo, Japan)
September 18, 2019
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(In Japanese)
Growth of InN nanocolumns using a cubic GaN interlayer by RF-MBE
Rikiya Onuma, Shuhei Yagi, Hiroyuki Yaguch
The 80th JSAP Autumn Meeting 2019 (18a-PB3-19) (Sapporo, Japan)
September 18, 2019
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(In Japanese)
Fabrication of cubic InN nanowires on GaN V-groove structures
Yusuke Nishimura, Shuhei Yagi, Hiroyuki Yaguchi
The 80th JSAP Autumn Meeting 2019 (18a-PB3-20) (Sapporo, Japan)
September 18, 2019
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(In Japanese)
Fabrication of UVC AlGaN LEDs on DC-sputter-based AlN templates
Yosuke Mogami, Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka, Yuri Itokazu, Shunsuke Kuwaba, Jo Masafumi, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
The 80th JSAP Autumn Meeting 2019 (18a-E310-9) (Sapporo, Japan)
September 18, 2019
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(In Japanese)
Increased Strain Relaxation in AlGaN Layers Grown on Sputter-based AlN Templates
Yosuke Mogami, Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka, Yuri Itokazu, Shunsuke Kuwaba, Jo Masafumi, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
The 80th JSAP Autumn Meeting 2019 (18a-E310-8) (Sapporo, Japan)
September 18, 2019
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(In Japanese)
Characterization of Carrier Recombination Levels in Nitrogen δ-Doped GaAs Superlattices by Two- Wavelength Excited Photoluminescence Method
Kota Nagata, Kamata Norihiko, Yagi Syuuhei, Yaguchi Hiroyuki
The 80th JSAP Autumn Meeting 2019 (18p-PB4-11) (Sapporo, Japan)
September 18, 2019
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Optical detection of nonradiative recombination levels via intermediate band in GaAs:N δ-doped superlattices
N. Kamata, K. Nagata, Md. Dulal Haque, Z. Honda, S. Yagi,
H. Yaguchi and Y. Okada
30th International Conference on Defects in Semiconductors
(Seattle, USA)
July 22, 2019
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Two-Wavelength Excited Photoluminescence Study of Upconversion
Photoluminescence from GaPN Alloys
H. Yaguchi, W. Takahashi,
K. Takamiya, S. Yagi, N. Kamata, Y. Hazama and
H. Akiyama
13th International Conference on Nitride Semiconductors (IP-01.07)
(Bellevue, USA)
July 8, 2019
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Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter-Based
AlN Templates
Y. Mogami, S. Motegi, A. Osawa, K.
Osaki, Y. Tanioka, A. Maeoka, Y. Itokazu, S.
Kuwaba, M. Jo, N. Maeda, H. Yaguchi and H.
Hirayama
13th International Conference on Nitride Semiconductors (GP-01.12)
(Bellevue, USA)
July 8, 2019
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Real-time X-ray Diffraction Analysis for the Vacuum Deposition Process of
CH3NH3PbI3 perovskite
T. Miyadera, Y. Auchi, K. Yamamoto, N. Ohashi, T. Koganezawa, H. Yaguchi, Y. Yoshida, M. Chikamatsu
10th International Conference on Molecular Electronics & Bioelectronics (FO-10) (Nara, Japan)
June 27, 2019
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Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below-Gap Excitation Light without Temperature Effect
S. Ferdous, C. Negishi, N. Kamata, S. Yagi, and H. Yaguchi
Compound Semiconductor Week (TuP-D-10) (Nara, Japan)
May 21, 2019
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(In Japanese)
Real-time observation of organo-lead halide perovskite film formation process
Yuto Auchi, Tetsuhiko Miyadera, Kohei Yamamoto, Tomoyuki Koganezawa, Masayuki Chikamatsu, Yuji Yoshida, Hiroyuki Yaguch
The 66th JSAP Spring Meeting 2019 (9p-S222-2)
(Tokyo, Japan)
March 9, 2019
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(In Japanese)
Fabrication of AlGaN deep-UV LEDs on DC-sputter based AlN films
Yosuke Mogami, Shogo Motegi, Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
The 66th JSAP Spring Meeting 2019 (11p-W541-5)
(Tokyo, Japan)
March 11, 2019