Publication 2016


  • Optical characterization of carrier recombination processes in GaPN by two-wavelength excited photoluminescence
    M. Suetsugu, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson, P. O. Holtz
    2016 Compound Semiconductor Week, INSPEC Accession Number: 16196234 (2016).
    DOI: 10.1109/ICIPRM.2016.7528672
  • Two-wavelength excited photoluminescence in 4H-SiC substrate -dependence on BGE power density-
    K. Kondo, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, Z. Honda
    2016 Compound Semiconductor Week, INSPEC Accession Number: 16196083 (2016).
    DOI: 10.1109/ICIPRM.2016.7528594
  • Self-organized growth of cubic InN dot arrays on MgO (001) vicinal substrates
    K. Ishii, S. Yagi, and H. Yaguchi
    2016 Compound Semiconductor Week, INSPEC Accession Number: 16195966 (2017).
    DOI: 10.1109/ICIPRM.2016.7528673