Yaguchi

Presentation 2017


  • Effect of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based elctronic donor material
    Y. Akiyama, H. Tachibana, R. Azumi, T. Miyadera, M. Chikamatsu, T. Koganezawa, S. Yagi, and H. Yaguchi
    27th International Photovoltaic Science and Engineering Conference (4ThPo.136) (Otsu, Japan)
    November 16, 2017
  • Real-time x-ray diffraction analysis for solvent vapor annealing process of small-molecule fullerene films
    T. Miyadera, K. Arai, T. Koganezawa, Y. Akiyama, H. Tachibana, Y. Yoshida, M. Chikamatsu, S. Yagi, and H. Yaguchi
    27th International Photovoltaic Science and Engineering Conference (4ThPo.143) (Otsu, Japan)
    November 16, 2017
  • First-princiles study of optical transitions in gallium arsenide:nitrogen delta-doped superlattices
    H. Yoshikawa, S. Yagi, and H. Yaguchi
    27th International Photovoltaic Science and Engineering Conference (6ThPo.187) (Otsu, Japan) November 16, 2017
  • Influence of nitrogen atomic arrangement in GaAsN alloys on band gap energy
    K. Miyajima, S. Yagi, Y. Shoji, Y. Okada, and H. Yaguchi
    27th International Photovoltaic Science and Engineering Conference (6ThPo.190) (Otsu, Japan)
    November 16, 2017
  • Nanostructured Dilute Nitride Alloys for High-Efficiency Solar Cells
    S. Yagi, Y. Okada, and H. Yaguchi
    International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth -Material Research, Characterization and Imaging by In situ/Operando XAFS and X-ray Techniques- UEC 100th Anniversary Commemorative Event (IN15) (Chofu, Japan)
    October 30, 2017
  • First-principles study of optical transitions in dilute nitride semiconductor nanostructures
    H. Yaguchi, S. Yagi, and K. Takamiya
    6th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Como, Italy)
    September 28, 2017
  • CH3NH3PbI3 Epitaxial Film with Atomically Smooth Surface Fabricated by IR Laser Deposition Method
    T. Miyadera, Y. Auchi, T. Koganezawa, H. Yaguchi, Y. Yoshida, M. Chikamatsu
    3rd International Conference on Perovskite Solar Cells and Optoelectronics (C1.06) (Oxford, UK)
    September 20, 2017
  • (In Japanese) Effect of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material
    Yuki Akiyama, Hiroaki Tachibana, Reiko Azumi, Tetsuhiko Miyadera, Masayuki Chikamatsu, Shuhei Yagi, Hiroyuki Yaguchi
    The 78th JSAP Autumn Meeging 2017 (5p-PA3-7) (Fukuoka, Japan)
    September 5, 2017
  • (In Japanese) Influence of Nitrogen Atomic Arrangement in Dilute Nitrides on Band Gap Energy
    Kazuki Miyajima, Shuhei Yagi, Yasushi Shoji, Yoshitaka Okada, Hiroyuki Yaguchi
    The 78th JSAP Autumn Meeging 2017 (5p-C21-1) (Fukuoka, Japan)
    September 5, 2017
  • (In Japanese) Upconversion luminescence from GaPN alloys
    Wataru Takahashi, Kengo Takamiya, Shuhei Yagi, Takashi Ito, Hidefumi Akiyama, Hiroyuki Yaguchi
    The 78th JSAP Autumn Meeging 2017 (6p-PA7-1) (Fukuoka, Japan)
    September 6, 2017
  • (In Japanese) Optical Characterization of Carrier Recombination Processes in GaPN Alloy by Selecting Conduction-Band / Intermediate-Band Excitation
    Chika Negishi, Dulal Haque, Takeshi Fukuda, Norihiko Kamata, Hiroyuki Yaguchi
    The 78th JSAP Autumn Meeging 2017 (6p-A503-3) (Fukuoka, Japan)
    September 6, 2017
  • Detection of non-radiative recombination in GaAs:N δ-doped superlattice
    M. D. Haque, N. Kamata, T. Fukuda, Z. Honda, S. Yagi, H. Yaguchi, and Y. Okada
    29th International Conference on Defects in Semiconductors (ThB1-1) (Matsue, Japan)
    August 3, 2017
  • Biexciton emission from single quantum-confined structures in N-polar (000-1) InGaN/GaN multiple quantum wells
    K. Takamiya, S. Yagi, H. Yaguchi, H. Akiyama, K. Shojiki, T. Tanikawa, and R. Katayama
    12th International Conference on Nitride Semiconductors (A2.19) (Strasbourg, France)
    July 26, 2017
  • Radiative and nonradiative recombination processes via intermediate band in GaPN by two-wavelength excited photoluminescence
    C. Negishi, N. Kamata, Md Dulal Haque, T. Fukuda, and H. Yaguchi
    12th International Conference on Nitride Semiconductors (B2.46) (Strasbourg, France)
    July 26, 2017
  • Electrical characterization of n-type GaAs:N δ-doped superlattices
    R. Kato, S. Yagi, H. Yaguchi, Y. Okada
    Compound Semiconductor Week 2017 (P1.21) (Berlin, Germany)
    May 15, 2017
  • Carrier recombination levels in intermediate-band type GaPN revealed by time resolved and two-wavelength excited photoluminescence
    N. Kamata, M. Suetsugu, Md Dulal Haque, S. Yagi, H. Yaguchi, F. Karlsson, P. O. Holtz
    Compound Semiconductor Week 2017 (B5.6) (Berlin, Germany)
    May 17, 2017
  • (In Japanese) Epitaxial growth of organolead halide perovskite on rubrene single crystals
    Yuto Auchi, Tetsuhiko Miyadera, Tomoyuki Koganezawa, Masayuki Chikamatsu, Yuji Yoshida, Hiroyuki Yaguchi
    The 64th JSAP Spring Meeting 2017 (14p-313-2) (Yokohama, Japan)
    March 14, 2017
  • (In Japanese) Real-time observation of DRCN5T/PCBM bulk heterojunction films during solvent vapor annealing
    Koji Arai, Tetsuhiko Miyadera, Tomoyuki Koganezawa, Yuki Akiyama, Hiroaki Tachibana, Yuji Yoshida, Masayuki Chikamatsu, Shuhei Yagi, Hiroyuki Yaguchi
    The 64th JSAP Spring Meeting 2017 (16p-F201-3) (Yokohama, Japan)
    March 16, 2017
  • (In Japanese) Optical Characterization of Carrier Recombination Processes in Intermediate-Band Type GaPN Alloy
    Chika Negishi, Dulal Haque, Norihiko Kamata, Hiroyuki Yaguchi
    The 64th JSAP Spring Meeting 2017 (14p-411-13) (Yokohama, Japan)
    March 14, 2017
  • (In Japanese) Electrical properties of n-type GaAs:N δ-doped superlattices
    Ryo Kato, Shuhei Yagi, Yoshitaka Okada, Hiroyuki Yaguchi
    The 64th JSAP Spring Meeting 2017 (15p-P16-8) (Yokohama, Japan)
    March 15, 2017
  • (In Japanese) MBE growth temperature dependence of the luminescence from Er doped GaAs
    Daisuke Igarashi, Kengo Takamiya, Shuhei Yagi, Takashi Ito, Hidefumi Akiyama, Hiroyuki Yaguchi
    The 64th JSAP Spring Meeting 2017 (17p-P2-8) (Yokohama, Japan)
    March 17, 2017
  • (In Japanese) Fabrication of InGaAs:N δ-doped superlattices for 1 eV subcells
    Shumpei Umeda, Shuhei Yagi, Naoya Miyashita, Yoshitaka Okada, Hiroyuki Yaguchi
    The 64th JSAP Spring Meeting 2017 (14p-B6-9) (Yokohama, Japan)
    March 14, 2017
  • Properties of dilute nitride pseudo-alloys grown using a nitrogen delta-doping technique
    S. Yagi, Y. Okada, H. Yaguchi
    SPIE Photonics West OPTO (10099-14) (San Francisco, USA)
    January 31, 2017