Yaguchi

Publication 2019


  • Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates
    K. Okura, K. Takamiya, S. Yagi, and H. Yaguchi
    Japanese Journal of Applied Physics Vol. 58, No. SC, pp. SC1051-1-6 (2019).
    DOI: 10.7567/1347-4065/ab106a
  • Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing
    Y. Mogami, S. Motegi, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, M. Jo, N. Maeda, H. Yaguchi, and H. Hirayama
    Japanese Journal of Applied Physics Vol. 58, No. SC, pp. SC1029-1-4 (2019).
    DOI: 10.7567/1347-4065/ab1066
  • Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure
    Md. Dulal Haque, N. Kamata, A. Z. M. Touhidul Islam, Z. Honda, S. Yagi, H. Yaguchi
    Optical Materials Vol. 89, No. 16, pp. 521-527 (2019).
    DOI: 10.1016/j.optmat.2019.01.047
  • (In Japanese) Progress of UVC-LEDs using DC sputter AlN templates
    Y. Mogami, A. Osawa, K. Ozaki, Y. Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, M. Jo, N. Maeya, H. Yaguchi, and H. Hirayama
    IEICE technical report Vol. 119, No. 304, pp. 85-88 (2019).