Yaguchi

Presentation 2013


  • (In Japanese) 堆積と熱酸化による4H-SiC MOS構造の作製(II)
    大谷 篤志, 八木 修平, 土方 泰斗, 矢口 裕之
    SiC及び関連半導体研究 第22回講演会 (C-33) (Saitama, Japan)
    December 9, 2013
  • (In Japanese) In-situ分光エリプソメーターによるSiC酸化過程の面方位依存性測定
    後藤大祐, 八木修平, 土方泰斗, 矢口裕之
    SiC及び関連半導体研究 第22回講演会 (L-19) (Saitama, Japan)
    December 9, 2013
  • (In Japanese) 薄膜作製展望：成膜過程における核生成過程の解明と制御の展開/総論
    矢口裕之
    第42回薄膜・表面物理基礎講座 (Tokyo, Japan)
    November 25, 2013
  • (In Japanese) GaAs中窒素δドープ超格子の光学特性と中間バンド型太陽電池への応用
    八木修平, 矢口裕之
    第9回量子ナノ材料セミナー (Anan, Japan)
    November 6, 2013
  • Fabrication and Characterization of Intermediate Band Solar Cells Using GaAs:N Delta-Doped Superlattice
    S. Yagi, S. Noguchi, Y. Hijikata, H. Yaguchi, S. Kuboya, K. Onabe, Y. Okada
    23rd International Photovoltaic Science and Engineering Conference (4-O-7) (Taipei, Taiwan)
    October 30, 2013
  • First-Principles Study of an Intermediate Band of GaPN Alloys
    M. Saito, K. Sakamoto, S. Yagi, H. Yaguchi
    23rd International Photovoltaic Science and Engineering Conference (4-P-6) (Taipei, Taiwan)
    November 1, 2013
  • Intermediate band solar cells based on GaAs:N δ-doped superlattices
    S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H. Yaguchi
    4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (I-35) (Lake Arrowhead, USA)
    October 3, 2013
  • Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
    K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
    4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (C-18) (Lake Arrowhead, USA)
    October 3, 2013
  • Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
    Y. Hijikata, Y. Akasaka, S. Yagi, and H. Yaguchi
    International Conference on Silicon Carbide and Related Materials 2013 (Th-2B-4) (Miyazaki, Japan)
    October 3, 2013
  • (In Japanese) Optical spin injection into Ge/SiGe multiple quantum well at room temperature
    Yuhsuke Yasutake, Hiroyuki Yaguchi, Susumu Fukatsu
    The 4th JSAP Autumn Meeting 2013 (16p-C15-3) (Kyotanabe, Japan)
    September 16, 2013
  • (In Japanese) Characterization of Intermediate Band Solar Cells Using GaAs:N Delta-Doped Superlattice
    Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Yoshitaka Okada, Hiroyuki Yaguchi
    The 74th JSAP Autumn Meeting 2013 (17p-D6-14) (Kyotanabe, Japan)
    September 17, 2013
  • (In Japanese) Investigation of GaN cap layer growth conditions for InN/GaN dots multilayer structures
    Hidetoshi Tokuda, Misao Orihara, Syuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 74th JSAP Autumn Meeting 2013 (17p-P7-15) (Kyotanabe, Japan)
    September 17, 2013
  • (In Japanese) First Principles Study on the Conduction Band Electron States of GaAsN Alloys
    Kei Sakamoto, Hiroyuki Yaguchi
    The 74th JSAP Autumn Meeting 2013 (19a-P8-9) (Kyotanabe, Japan)
    September 19, 2013
  • (In Japanese) Time-resolved photoluminescence of biexciton emission from individual isoelectronic traps in N δ-doped GaAs
    Kengo Takamiya, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe, Hiroyuki Yaguchi
    The 74th JSAP Autumn Meeting 2013 (19a-P8-11) (Kyotanabe, Japan)
    September 19, 2013
  • (In Japanese) Effect of laser irradiation on the luminescence efficiency of GaInNAs quantum wells
    Takuya Iwasaki, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi, Osamu Ueda
    The 74th JSAP Autumn Meeting 2013 (19a-P8-13) (Kyotanabe, Japan)
    September 19, 2013
  • (In Japanese) Excitation power dependence of the luminescence from GaAsN/GaAs quantum well structures
    Yasuyuki Yamazaki, Shuhei Yagi, Yasuto Hijikata, Kentaro Onabe, Hiroyuki Yaguchi
    The 74th JSAP Autumn Meeting 2013 (19a-P8-14) (Kyotanabe, Japan)
    September 19, 2013
  • (In Japanese) Real-time observation of the oxidation process of nonpolar hexagonal SiC surfaces
    Daisuke Goto, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 74th JSAP Autumn Meeting 2013 (19a-P9-4) (Kyotanabe, Japan)
    September 19, 2013
  • First Principles Study on the Conduction Band Electron States of GaAsN Alloys
    K. Sakamoto and H. Yaguchi
    10th International Conference on Nitride Semiconductors 2013 (DP2.21) (Washington, DC, USA)
    August 27, 2013
  • Photoreflectance Study of the Temperature Dependence of Excitonic Transitions in Dilute GaAsN Alloys
    W. Okubo, S. Yagi, Y. Hijikata, K. Onabe and H. Yaguchi
    10th International Conference on Nitride Semiconductors 2013 (B10.05) (Washington, DC, USA)
    August 28, 2013
  • Optical Absorption by E+ Miniband of GaAs:N Delta-Doped Superlattices
    S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, H. Yaguchi
    39th IEEE Photovoltaic Specialsits Conference (Tampa, USA)
    June 20, 2013
  • (In Japanese) SiC酸化メカニズム解明への試み　〜 Si酸化との共通点/異なる点 〜
    土方泰斗, 八木修平, 矢口裕之
    電子情報通信学会シリコン材料・デバイス研究会(SDM2013-62) (Tokyo, Japan)
    June 18, 2013
  • Stacked Structure of Self-Organized Cubic InN Nano-Scale Dots Grown by Molecular Beam Epitaxy
    S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, and H. Yaguchi
    The 40th International Symposium on Compound Semiconductors (MoPC-06-02) (Kobe, Japan)
    May 20, 2013
  • (In Japanese) RF-MBE growth of stacked cubic InN dots
    Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 60th JSAP Spring Meeting 2013 (28p-PA1-1) (Atsugi, Japan)
    March 28, 2013
  • (In Japanese) RF-MBE growth of cubic AlN and high-Al-content cubic AlGaN films
    Masahiro Kakuda, Sei Morikawa, Shigeyuki Kuboya, Ryuji Katayama, Hiroyuki Yaguchi, Kentaro Onabe
    The 60th JSAP Spring Meeting 2013 (28p-PA1-27) (Atsugi, Japan)
    March 28, 2013
  • (In Japanese) Optical Absorption by E+ band in Nitrogen Delta-Doped GaAs Superlattices for Intermediate Band Solar Cells
    Shunsuke Noguchi, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Yoshitaka Okada, Kentaro Onabe, Hiroyuki Yaguchi
    The 60th JSAP Spring Meeting 2013 (29a-PB7-19) (Atsugi, Japan)
    March 29, 2013
  • (In Japanese) First-principles calculation of the electronic structure of GaPN alloys
    Makoto Saito, Kei Sakamoto, Hiroyuki Yaguchi
    The 60th JSAP Spring Meeting 2013 (29a-PB7-20) (Atsugi, Japan)
    March 29, 2013
  • (In Japanese) The effect of thermal oxidation to stacking faults in 4H-SiC epitaxial layers
    Yutaro Miyano, Hiroyuki Yaguchi, Yasuto Hijikata, Shuhei Yagi
    The 60th JSAP Spring Meeting 2013 (29p-PB4-9) (Atsugi, Japan)
    March 29, 2013