Yaguchi

論文 1997


  • Self Formation and Photoluminescence of II-VI Quantum Wires on GaAs(110) Surfaces
    B. P. Zhang, W.X. Wang, G. Isoya, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, K. Edamatsu and T. Itoh
    Nonlinear Optics, Vol. 18, No. 1-4, pp. 133-136 (1997).
  • Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP1-xNx Alloys: A Growth Interruption Study
    S. Miyoshi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 36, No. 12A, pp. 7110-7118 (1997).
    DOI: 10.1143/JJAP.36.7110
  • In-plane polarization properties of GaAsP/AlAs strained quantum wells on GaAs(113)A and (114)A substrates
    N. Hiroyasu, H. Yaguchi, K. Onabe, Y. Shiraki, R. Ito
    Institute of Physics Conference Series Vol. 155, pp. 771-774 (1997).
  • The Gammac-Gammav Transition Energies of AlxIn1-xP Alloys
    Y. Ishitani, H. Hamada, S. Minagawa, H. Yaguchi and Y. Shiraki
    Japanese Journal of Applied Physics Vol. 36, No. 11, pp. 6607-6613 (1997).
    DOI: 10.1143/JJAP.36.6607
  • Self Formation and Optical Properties of II-VI Semiconductor Wire Structures
    B. Zhang, W. Wang, T. Yasuda, Y. Li, Y. Segawa, H. Yaguchi, K. Onabe, K. Edamatsu and T. Itoh
    Japanese Journal of Applied Physics Vol. 36, No. 11B, pp. L1490-L1493 (1997).
    DOI: 10.1143/JJAP.36.L1490
  • Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wells
    X. Zhang, M. Ishikawa, H. Yaguchi, K. Onabe
    Surface Science Vol. 387, No. 1-3, pp. 371-382 (1997).
    DOI: 10.1016/S0039-6028(97)00401-9
  • Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
    J. Wu, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
    Applied Physics Letters Vol. 71, No. 15, pp. 2067-2069 (1997).
    DOI: 10.1063/1.119344
  • Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
    J. Wu, H. Yaguchi, H. Nagasawa, Y. Yamaguchi, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 36, No. 7A, pp. 4241-4245 (1997).
    DOI: 10.1143/JJAP.36.4241
  • Naturally formed ZnCdSe quantum dots on ZnSe (110) surfaces
    B. P. Zhang, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, E. Edamatsu and T. Itoh
    Applied Physics Letters Vol. 70, No. 18, pp. 2413-2415 (1997).
    DOI: 10.1063/1.118888
  • Metalorganic Vapor Phase Epitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs(111)B Substrates
    T. Tsujikawa, W. Pan, K. Momma, M. Kudo, K. Tanaka, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 36, No. 6B, pp. 4102-4106 (1997).
    DOI: 10.1143/JJAP.36.4102
  • Nitrogen concentration dependence of photoluminescence decay time in GaP1-xNx alloys
    H. Yaguchi, S. Miyoshi, H. Arimoto, S. Saito, H. Akiyama, K. Onabe, Y. Shiraki and R. Ito
    Solid State Electronics Vol. 41, No. 2, pp. 231-233 (1997).
    DOI: 10.1016/S0038-1101(96)00206-7
  • Photoluminescence excitation spectroscopy of GaP1-xNx Alloys: conduction band edge formation by nitrogen incorporation
    H. Yaguchi, S. Miyoshi, G. Biwa, M. Kibune, K. Onabe, Y. Shiraki and R. Ito
    Journal of Crystal Growth, Vol. 170, No. 1-4, pp. 353-356 (1997).
    DOI: 10.1016/S0022-0248(96)00592-1
  • A highly luminescent crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire laser structure
    W. Pan, H. Yaguchi, Y. Hanamaki, M. Ishikawa, Y. Kaneko, K. Onabe, R Ito and Y. Shiraki
    Journal of Crystal Growth, Vol. 170, No. 1-4, pp. 585-589 (1997).
    DOI: 10.1016/S0022-0248(96)00593-3
  • High Quality Cubic GaN Growth on GaAs (100) Sbustrates by Metalorganic Vapor Phase Epitaxy
    J. Wu, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 194-195 (1997).
    DOI: 10.7567/SSDM.1997.C-5-4
  • Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
    M. Ishikawa, W. Pan, Y. Kaneko, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
    Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 342-343 (1997).
    DOI: 10.7567/SSDM.1997.B-11-6
  • GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
    T. Tsujikawa, K. Momma, H. Yaguchi, K. Onabe, Y. Shiraki, and R. Itp
    Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 318-319 (1997).
    DOI: 10.7567/SSDM.1997.B-10-3