Yaguchi

論文 1998


  • Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
    S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, N. Usami, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 37, No. 12B, pp. L1493-1496 (1998).
    DOI: 10.1143/JJAP.37.L1493
  • MOVPE growth of GaPAsN quaternary alloys lattice-matched to GaP
    G. Biwa, H. Yaguchi, K. Onabe, and Y. Shiraki
    Materials Research Society Proceedings Vol. 482, pp. 173-178 (1998).
    DOI: 10.1557/PROC-482-173
  • カソードルミネッセンスによる半導体低次元構造の評価
    矢口裕之, 辻川智子, 尾鍋研太郎
    電子顕微鏡 Vol. 33, No. Supplement2, pp. 217-220 (1998).
    LINK
  • A New Approach to ZnCdSe Quantum Dots
    B. P. Zhang, T. Yasuda, W. X. Wang, Y. Segawa, K. Edamatsu, T. Itoh, H. Yaguchi and K. Onabe
    Materials Science and Engineering B Vol. 51 No. 1-3, pp. 127-131 (1998).
    DOI: 10.1016/S0921-5107(97)00245-6
  • Self-Assembled, Very Long II-VI Semiconductor Quantum Wires
    B. P. Zhang, W. X. Wang, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, K. Edamatsu and T. Itoh
    Materials Science and Engineering B Vol. 51, No. 1-3, pp. 224-228 (1998).
    DOI: 10.1016/S0921-5107(97)00265-1
  • Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates
    N. Usami, Y. Shiraki, W. Pan, H. Yaguchi and K. Onabe
    Superlattices and Microstructures Vol. 23, No. 2, pp. 395-400 (1998).
    DOI: 10.1006/spmi.1996.0285
  • Theoretical study of conduction band edge formation in GaP1-xNx alloys using a tight-binding approximation
    H. Yaguchi
    Journal of Crystal Growth Vol. 189-190, pp. 500-504 (1998).
    DOI: 10.1016/S0022-0248(98)00339-X
  • Molecular beam epitaxy of SiGe heterostructures using a newly designed Si effusion cell
    H. Yaguchi, T. Yamamoto and Y. Shiraki
    Materials Science and Engineering Vol. B51, No. 1-3, pp. 170-172 (1998).
    DOI: 10.1016/S0921-5107(97)00254-7
  • GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs(111)B Substrates by Metalorganic Vapor Phase Epitaxy
    T. Tsujikawa, K. Momma, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 37, No. 3B, pp.1493-1496 (1998).
    DOI: 10.1143/JJAP.37.1493
  • Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs(100) Substrates
    J. Wu, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 37, No. 3B, pp.1440-1442 (1998).
    DOI: 10.1143/JJAP.37.1440
  • Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
    M. Ishikawa, W. Pan, Y. Kaneko, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
    Japanese Journal of Applied Physics Vol. 37, No. 3B, pp.1556-1558 (1998).
    DOI: 10.1143/JJAP.37.1556
    Erratum: Japanese Journal of Applied Physics Vol. 37, No. 7, p. 4230 (1998).
    DOI: 10.1143/JJAP.37.4230
  • Characterization of SiGe Strained Heterostructure Grown by Molecular Beam Epitaxy Using a Si Effusion Cell
    H. Yaguchi, T. Yamamoto and Y. Shiraki
    Thin Solid Films Vol. 321, No. 1-2, pp. 241-244 (1998).
    DOI: 10.1016/S0040-6090(98)00480-5
  • Fabrication of Pb(Zr,Ti)O3/MgO/GaN/GaAs structure for optoelectronic device applications
    A. Masuda, S. Morita, H. Shigeno, A. Morimoto, T. Shimizu, J. Wu, H. Yaguchi, K. Onabe
    Journal of Crystal Growth Vol. 189-190, pp. 227-230 (1998).
    DOI: 10.1016/S0022-0248(98)00241-3
  • Optical transitions in cubic GaN grown on GaAs(100) substrates by metalorganic vapor-phase epitaxy
    J. Wu, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
    Journal of Crystal Growth Vol. 189-190, pp. 415-419 (1998).
    DOI: 10.1016/S0022-0248(98)00311-X
  • Investigation of luminescence properties of GaN single crystals grown on 3C-SiC substrates
    J. Wu, H. Yaguchi, H. Nagasawa, Y. Yamaguchi, K. Onabe, Y. Shiraki and R. Ito
    Journal of Crystal Growth Vol. 189-190, pp. 420-424 (1998).
    DOI: 10.1016/S0022-0248(98)00312-1
  • Metalorganic vapor-phase epitaxy of GaP1-x-yAsyNx quaternary alloys on GaP
    G. Biwa, H. Yaguchi, K. Onabe and Y. Shiraki
    Journal of Crystal Growth Vol. 189-190, pp. 485-489 (1998).
    DOI: 10.1016/S0022-0248(98)00336-4
  • Temperature dependence of photoluminescence of GaP1-xNx alloys
    H. Yaguchi, G. Biwa, S. Miyoshi, D. Aoki, K. Arimoto, K. Onabe, R. Ito and Y. Shiraki
    Journal of Crystal Growth Vol. 189-190, pp. 496-499 (1998).
    DOI: 10.1016/S0022-0248(98)00338-8
  • Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic AlxGa1-xN
    J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    Applied Physics Letters Vol. 73, No. 2, pp. 193-195 (1998).
    DOI: 10.1063/1.121752
  • Metalorganic Vapor Phase Epitaxy of High Quality Cubic GaN,AlGaN and Their Application to Optical Devices
    J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes, pp. 715-718 (1998).
  • Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate
    J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    Applied Physics Letters Vol. 73, No. 14, pp. 1931-1933 (1998).
    DOI: 10.1063/1.122326
  • Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(001) substrates by metalorganic vapor phase epitaxy
    H. Yaguchi, J. Wu, B. Zhang, Y. Segawa, H. Nagasawa, K. Onabe and Y. Shiraki
    Journal of Crystal Growth Vol. 195, No.1-4, pp. 323-327 (1998).
    DOI: 10.1016/S0022-0248(98)00672-1
  • Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures
    G. Biwa, H. Yaguchi, K. Onabe and Y. Shiraki
    Journal of Crystal Growth Vol. 195, No. 1-4, pp. 574-578 (1998).
    DOI: 10.1016/S0022-0248(98)00734-9