Yaguchi

論文 2013


  • Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs
    K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
    AIP Conference Proceedings Vol. 1566, pp. 538-539 (2013).
    DOI: 10.1063/1.4848523
  • Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy
    S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, and H. Yaguchi
    Physica Status Solidi C Vol. 10, No. 11, pp. 1545-1548 (2013).
    DOI: 10.1002/pssc.201300275
  • Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N δ-Doped Superlattices
    S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, and H. Yaguchi
    Japanese Journal of Applied Physics Vol. 52, No. 10, pp. 102302-1-4 (2013).
    DOI: 10.7567/JJAP.52.102302
  • Analysis of Electronic Structures of Nitrogen δ-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
    S. Noguchi, S. Yagi, D. Sato, Y. Hijikata, K. Onabe, S. Kuboya, H. Yaguchi
    IEEE Journal of Photovoltaics Vol. 3, No. 4, pp. 1287-1291 (2013).
    DOI: 10.1109/JPHOTOV.2013.2271978
  • Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence
    A. Z. M. Touhidul Islam, T. Hanaoka, K. Onabe, S. Yagi, N. Kamata, and H. Yaguchi
    Applied Physics Express Vol. 6, No. 9, pp. 092401-1-3 (2013).
    DOI: 10.7567/APEX.6.092401
  • RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer
    M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
    Journal of Crystal Growth Vol. 378, pp. 307-309 (2013).
    DOI: 10.1016/j.jcrysgro.2012.12.120
  • RF-MBE growth of cubic InN nano-scale dots on cubic GaN
    J. Suzuki, M. Orihara, S. Yagi, Y. Hijikata, H. Yaguchi
    Journal of Crystal Growth Vol. 378, pp. 454-458 (2013).
    DOI: 10.1016/j.jcrysgro.2012.12.050
  • Molecular beam epitaxy of ErGaAs alloys on GaAs (001)
    R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
    Journal of Crystal Growth Vol. 378, pp. 85-87 (2013).
    DOI: 10.1016/j.jcrysgro.2012.12.043
  • Observation of optical spin injection into Ge-based structures at room temperature
    Y. Yasutake, S. Hayashi, H. Yaguchi, and S. Fukatsu
    Applied Physics Letters Vol. 102, No. 24, pp. 242104-1-4 (2013).
    DOI: 10.1063/1.4811495
  • Optical Properties and Carrier Dynamics in Asymmetric Coupled InGaN Multiple Quantum Wells
    G. E. Weng, B. P. Zhang, M. M. Liang, X. Q. Lv, J. Y. Zhang, L. Y. Ying, Z. R. Qiu, H. Yaguchi, S. Kuboya, K. Onabe, S. Q. Chen, H. Akiyama
    Functional Materials Letters Vol. 06, No. 2, pp. 1350021-1-5 (2013).
    DOI: 10.1142/S1793604713500215
  • Model calculations of SiC oxide growth rates at sub-atomospheric pressures using the Si and C emission model
    Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida
    Materials Science Forum Vols. 740-742, pp. 833-836 (2013).
    DOI: 10.4028/www.scientific.net/MSF.740-742.833
  • Optical absorption by E+ miniband of GaAs:N δ-doped superlattices
    S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H. Yaguchi
    2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), pp. 2490-2493 (2013).
    DOI: 10.1109/PVSC.2013.6744981
  • SiC酸化メカニズム解明への試み: Si酸化との共通点/異なる点
    土方 泰斗, 八木 修平, 矢口 裕之
    電子情報通信学会技術研究報告 Vol. 113, No.87, pp. 91-96 (2013).