Yaguchi

Presentation 1991


  • (In Japanese) 表面自由エネルギー制御による急峻な半導体ヘテロ界面の形成
    Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
    電気学会電子材料研究会 (EMF-91-11)
    December 11, 1991
  • (In Japanese) Raman Scattering in Cubic GaN on GaAs
    Hiroyuki Yaguchi, Yoshiki Nitta, Kentaro Onabe, Susumu Fukatsu, Yasuhiro Shiraki, Ryoichi Ito
    The 52nd Autumn Meeting, 1991; The Japan Society of Applied Physics (9a-X-8) (Okayama, Japan)
    October 9, 1991
  • (In Japanese) Self-modulation in Sb doping of MBE-grown SiGe strained-layer superlattices
    Ken Fujita, Susumu Futatsu, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
    The 52nd Autumn Meeting, 1991; The Japan Society of Applied Physics (11p-Z-6) (Okayama, Japan)
    October 11, 1991
  • (In Japanese) Coverage dependence in kinetic surface segregation of Sb during Si MBE
    Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
    The 52nd Autumn Meeting, 1991; The Japan Society of Applied Physics (11p-Z-7) (Okayama, Japan)
    October 11, 1991
  • (In Japanese) Glide Velocity of Dislocations in Heteroepitaxial Thin Films
    Yoshifumi Yamashita, Koji Maeda, Yutaka Mera, Hiroyuki Yaguchi, Yasuhiro Shiraki
    The Physical Society of Japan 46th Annual Meeting (28p-K-10) (Sapporo, Japan)
    September 28, 1991
  • Atomistic Picture of Interfacial Mixing in the Si/Ge Hetrostructures
    Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
    5th Conference on Modulated Semiconductor Structures (MSS-5) (Nara, Japan)
    July 1991
  • Kinetics of Ge Segregation in the Presence of Sb during Molecular Beam Epitaxy
    Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
    4th International Conference on Molecular Beam Epitaxy (Anaheim, USA)
    April 1991
  • Suppression of Si/Ge Interfacial Mixing with Sb Deposition in Strained-Layer Superlattices
    Ken Fujita, Susumu Fukatsu, Hiroyuki Yaguchi, Takayuki Igarashi, Yasuhiro Shiraki and Ryoichi Ito
    4th International Conference on Molecular Beam Epitaxy (Anaheim, USA)
    April 1991
  • Initial Oxidation of MBE-Grown Si Surfaces
    Takayuki Igarashi, Hiroyuki Yaguchi, Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki, Takeo Hattori and Ryoichi Ito
    4th International Conference on Molecular Beam Epitaxy (Anaheim, USA)
    April 1991
  • Structural Characterization of Si/Ge Heterointerfaces by Secondary Ion Mass Spectroscopy
    Susumu Fukatsu, Hiroyuki Yaguchi, Ken Fujita, Yasuhiro Shiraki and Ryoichi Ito
    4th International Conference on Molecular Beam Epitaxy (Anaheim, USA)
    April 1991
  • (In Japanese) B δ-doping in Ge using HBO2
    Hiroyuki Yaguchi, Takayuki Igarashi, Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki, Ryoichi Ito
    The 38th Spring Meeting, 1991; The Japan Society of Applied Physics and Related Societies (29p-ZF-11) (Hiratsuka, Japan)
    March 29, 1991
  • (In Japanese) In-situ Observation of Dislocation Climb Motion in Si1-xGex/Si-epitaxial Films
    Yoshifumi Yamashita, Yutaka Mera, Koji Maeda, Hiroyuki Yaguchi, Ken Fujita, Yasuhiro Shiraki
    The 38th Spring Meeting, 1991; The Japan Society of Applied Physics and Related Societies (30a-ZF-2) (Hiratsuka, Japan)
    March 30, 1991
  • (In Japanese) Initial oxidation of MBE-grown Si surfaces
    Takayuki Igarashi, Yoshiya Tamura, Hiroyuki Yaguchi, Ken Fujita, Susumu Fukatsu, Takeo Hattori, Yasuhiro Shiraki, Ryoichi Ito
    The 38th Spring Meeting, 1991; The Japan Society of Applied Physics and Related Societies (29a-SY-8) (Hiratsuka, Japan)
    March 29, 1991
  • (In Japanese) A secondary ion mass spectrometry on the interfacial abruptness in SiGe superlattices
    Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
    The 38th Spring Meeting, 1991; The Japan Society of Applied Physics and Related Societies (30a-ZF-8) (Hiratsuka, Japan)
    March 30, 1991
  • (In Japanese) Kinetics of Ge surfarce segregation during Si MBE growth
    Susumu Futatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
    The 38th Spring Meeting, 1991; The Japan Society of Applied Physics and Related Societies (30a-ZF-9) (Hiratsuka, Japan)
    March 30, 1991
  • (In Japanese) Kinetics of the suppression of Ge surface segregation during Si MBE by Sb
    Ken Fujita, Susumu Fukatsu, Hiroyuki Yaguchi, Takayuki Igarashi, Yasuhiro Shiraki, Ryoichi Ito
    The 38th Spring Meeting, 1991; The Japan Society of Applied Physics and Related Societies (30a-ZF-12) (Hiratsuka, Japan)
    March 30, 1991