Publication 2012

• Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells
  Shunsuke Noguchi, Shuhei Yagi, Yasuto Hijikata, Kentaro Onabe, Shigeyuki Kuboya, Hiroyuki Yaguchi
  2012 38th IEEE Photovoltaic Specialists Conference (PVSC), pp. 000083-000086 (2012).
  DOI: 10.1109/PVSC.2012.6317573
• TEM Analysis of Structural Phase Transition in MBE Grown Cubic InN on MgO (001) by MBE: Effect of Hexagonal Phase Inclusion in an C-GaN Nucleation Layer
  Jamreonta Parinyataramas, Sakuntam Sanorpim, Chanchana Thanachayanont, Hiroyuki Yaguchi, Misao Orihara
  Applied Mechanics and Materials Vols. 229-231, pp. 219-222 (2012).
  DOI: 10.4028/www.scientific.net/AMM.229-231.219
• Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs
  Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, and Hiroyuki Yaguchi
  Applied Physics Express Vol. 5, No. 11, pp. 111201-1-3 (2012).
  DOI: 10.1143/APEX.5.111201
• Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
  Keiko Kouda, Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, and Sadafumi Yoshida
  Journal of Applied Physics Vol. 112, No. 2, pp. 024502-1-6 (2012).
  DOI: 10.1063/1.4736801
• Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers
  Hikaru Yamagata, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
  Applied Physics Express Vol. 5, No. 5, pp. 051302-1-3 (2012).
  DOI: 10.1143/APEX.5.051302
• RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
  Misao Orihara, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
  Physica Status Solidi C Vol. 9, No. 3-4, pp. 658-661 (2012).
  DOI: 10.1002/pssc.201100365
• Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
  Kengo Takamiya, Yuta Endo, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama and H. Yaguchi
  Materials Science Forum Vols. 706-709, pp. 2916-2921 (2012).
  DOI: 10.4028/www.scientific.net/MSF.706-709.2916
• Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE
  Papaporn Jantawongrit, Sakuntam Sanorpim, Hiroyuki Yaguchi, Misao Orihara, Pichet Limsuwan
  Procedia Engineering Vol. 32, pp. 882-887 (2012).
  DOI: 10.1016/j.proeng.2012.02.027