Publication 2012

• Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells
  S. Noguchi, S. Yagi, Y. Hijikata, K. Onabe, S. Kuboya, H. Yaguchi
  2012 38th IEEE Photovoltaic Specialists Conference (PVSC), pp. 000083-000086 (2012).
  DOI: 10.1109/PVSC.2012.6317573
• TEM Analysis of Structural Phase Transition in MBE Grown Cubic InN on MgO (001) by MBE: Effect of Hexagonal Phase Inclusion in an C-GaN Nucleation Layer
  J. Parinyataramas, S. Sanorpim, C. Thanachayanont, H. Yaguchi, M. Orihara
  Applied Mechanics and Materials Vols. 229-231, pp. 219-222 (2012).
  DOI: 10.4028/www.scientific.net/AMM.229-231.219
• Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
  Applied Physics Express Vol. 5, No. 11, pp. 111201-1-3 (2012).
  DOI: 10.1143/APEX.5.111201
• Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
  K. Kouda, Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida
  Journal of Applied Physics Vol. 112, No. 2, pp. 024502-1-6 (2012).
  DOI: 10.1063/1.4736801
• Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers
  H. Yamagata, S. Yagi, Y. Hijikata, and H. Yaguchi
  Applied Physics Express Vol. 5, No. 5, pp. 051302-1-3 (2012).
  DOI: 10.1143/APEX.5.051302
• RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
  M. Orihara, S. Yagi, Y. Hijikata, and H. Yaguchi
  Physica Status Solidi C Vol. 9, No. 3-4, pp. 658-661 (2012).
  DOI: 10.1002/pssc.201100365
• Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
  K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
  Materials Science Forum Vols. 706-709, pp. 2916-2921 (2012).
  DOI: 10.4028/www.scientific.net/MSF.706-709.2916
• Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE
  P. Jantawongrit, S. Sanorpim, H. Yaguchi, M. Orihara, P. Limsuwan
  Procedia Engineering Vol. 32, pp. 882-887 (2012).
  DOI: 10.1016/j.proeng.2012.02.027