Publication 2017

• Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy
  Keisuke Matsuoka, Shuhei Yagi, Hiroyuki Yaguchi
  Journal of Crystal Growth Vol. 477, pp. 201-206 (2017).
  DOI: 10.1016/j.jcrysgro.2017.05.021
• Photoluminescence characterization of carrier recombination centers in 4H-SiC substrates by utilizing below gap excitation
  Keitaro Kondo, Norihiko Kamata, Hiroyuki Yaguchi, Shuhei Yagi, Takeshi Fukuda, Zentaro Honda
  Materials Science Forum Vol. 897, pp. 315-318 (2017).
  DOI: 10.4028/www.scientific.net/MSF.897.315
• Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates
  Kenichi Ishii, Shuhei Yagi, and Hiroyuki Yaguchi
  Physica Status Solidi B Vol. 254, No. 2, pp. 1600542-1-5 (2017).
  DOI: 10.1002/pssb.201600542
• Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation
  Norihiko Kamata, Makiko Suetsugu, Dulal Haque, Shuhei Yagi, Hiroyuki Yaguchi, Fredrik Karlsson, and Per Olof Holtz
  Physica Status Solidi B Vol. 254, No. 2, pp. 1600566-1-5 (2017).
  DOI: 10.1002/pssb.201600566