Publication 2017

• Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy
  K. Matsuoka, S. Yagi, H. Yaguchi
  Journal of Crystal Growth Vol. 477, pp. 201-206 (2017).
  DOI: 10.1016/j.jcrysgro.2017.05.021
• Photoluminescence characterization of carrier recombination centers in 4H-SiC substrates by utilizing below gap excitation
  K. Kondo, N. Kamata, H. Yaguchi, S. Yagi, T. Fukuda, Z. Honda
  Materials Science Forum Vol. 897, pp. 315-318 (2017).
  DOI: 10.4028/www.scientific.net/MSF.897.315
• Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates
  K. Ishii, S. Yagi, and H. Yaguchi
  Physica Status Solidi B Vol. 254, No. 2, pp. 1600542-1-5 (2017).
  DOI: 10.1002/pssb.201600542
• Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation
  N. Kamata, M. Suetsugu, D. Haque, S. Yagi, H. Yaguchi, F. Karlsson, and P. O. Holtz
  Physica Status Solidi B Vol. 254, No. 2, pp. 1600566-1-5 (2017).
  DOI: 10.1002/pssb.201600566