Yaguchi

Presentation 2011


  • (In Japanese) SiC熱酸化機構の解明への取り組み
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    第20回SiC及び関連ワイドギャップ半導体研究会 (V-2) (Nagoya, Japan)
    December 9, 2011
  • (In Japanese) 顕微フォトルミネッセンスを用いた4H-SiCエピ膜中積層欠陥に対する酸化の影響に関する研究
    Hikaru Yamagata, Yasuto Hijikata, Hiroyuki Yaguchi
    第20回SiC及び関連ワイドギャップ半導体研究会 (P-31) (Nagoya, Japan)
    December 8, 2011
  • (In Japanese) MOS構造の電気的特性に対する4H-SiCエピ層中積層欠陥の影響
    Shogo Toya, Yasuto Hijikata, Hiroyuki Yaguchi
    第20回SiC及び関連ワイドギャップ半導体研究会 (P-80) (Nagoya, Japan)
    December 8, 2011
  • Effect of Thermal Current at Selective Contacts Using Resonant Tunneling Structures on Perfornance of Hot Carrier Solar Cells
    Shuhei Yagi, Yasuto Hijikata, Yoshitaka Okada, and Hiroyuki Yaguchi
    21st International Photovoltaic Science and Engineering Conference (2D-4P-04) (Fukuoka, Japan)
    November 29, 2011
  • (In Japanese) 量子ドット太陽電池に向けた立方晶GaN上への立方晶InNドット配列成長
    Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    第3回薄膜太陽電池セミナー (PP-29) (Saitama, Japan)
    October 24, 2011
  • Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs
    Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama and Hiroyuki Yaguchi
    3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (P22) (Traunkirchen, Austria)
    September 12, 2011
  • (In Japanese) Effect of thermal current at selective energy contacts using resonant tunneling structures on properties of hot carrier solar cells
    Shuhei Yagi, Yasuto Hijikata, Yoshitaka Okada, Hiroyuki Yaguchi
    The 72nd JSAP Autumn Meeting 2011 (1a-H-12) (Yamagata, Japan)
    September 1, 2011
  • (In Japanese) Polarization properties of photoluminescence from individual isoelectronic traps in N δ-doped GaAs(110)
    Kengo Takamiya, Toshiyuki Fukushima, Shinya Hoshino, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe, Hiroyuki Yaguchi
    The 72nd JSAP Autumn Meeting 2011 (30p-ZA-5) (Yamagata, Japan)
    August 30, 2011
  • (In Japanese) RF-MBE growth of InN(10-13) and InGaN(10-13) on GaAs(110) substrates
    Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 72nd JSAP Autumn Meeting 2011 (30a-ZE-8) (Yamagata, Japan)
    Augsut 30, 2011
  • (In Japanese) RF-MBE growth of cubic InN dots on cubic GaN（II）
    Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 72nd JSAP Autumn Meeting 2011 (30a-ZE-9) (Yamagata, Japan)
    August 30, 2011
  • (In Japanese) Oxide growth rate measurements of SiC two-stage oxidation
    Ryo Shinoda, Yasuto Hijikata, Hiroyuki Yaguchi, Shuhei Yagi, Sadafumi Yoshida
    The 72nd JSAP Autumn Meeting 2011 (31p-N-11) (Yamagata, Japan)
    August 31, 2011
  • Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
    Kengo Takamiya, Yuta Endo, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, and Hiroyuki Yaguchi
    7th International Conference on Processing & Manufacturing of Advanced Materials (FILMS 1-11) (Quebec, Canada)
    August 3, 2011
  • RF-MBE Growth of Semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
    Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    9th International Conference on Nitride Semiconductors (PD3.19) (Glasgow, UK)
    July 13, 2011
  • Quantum Well Double Barrier Resonant Tunneling Structures for Selective Contacts of Hot Carrier Solar Cells
    Shuhei Yagi, Yasuto Hijikata, Yoshitaka Okada, Hiroyuki Yaguchi
    37th IEEE Photovoltaic Specialists Conference (Seattle, USA)
    June 23, 2011
  • TEM analysis of hexagonal-phase induction in MBE grown cubic InN layer on MgO (001) using a cubic GaN buffer layer
    Jamreonta Parinyataramas, Sakuntam Sanorpim, Visittapong Yordsri, Chanchana Thanachayanont, Hiroyuki Yaguchi, Misao Orihara
    38th International Symposium on Compound Semiconductors (We-2A.6) (Berlin, Germany)
    May 25, 2011
  • Characterization of substrate off-angle effects for high-quality InN films grown by RF-MBE on 4H-SiC (0001)
    Papaporn Jantawongrit, Sakuntam Sanorpim, Hiroyuki Yaguchi, Misao Orihara, Pichet Limsuwan
    38th International Symposium on Compound Semiconductors (P4.96) (Berlin, Germany)
    May 24, 2011
  • (In Japanese) Photoluminescence from isoelectronic traps in N δ-doped GaAs grown on GaAs(110) substrates
    Kengo Takamiya, Toshiyuki Fukushima, Shinya Hoshino, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe, Hiroyuki Yaguchi
    The 58th JSAP Spring Meeting 2011 (25p-BQ-4)
  • (In Japanese) Fabrication of InN/p-4H-SiC structure and its characterization
    Takahiro Yano, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 58th JSAP Spring Meeting 2011 (25a-BY-7)
  • (In Japanese) RF-MBE growth of cubic InN dots on cubic GaN
    Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 58th JSAP Spring Meeting 2011 (26p-BZ-2)
  • (In Japanese) An Attempt for the Clarification of SiC Thermal Oxidation Mechanism: Similarities and Differences between SiC and Si Oxidation
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 58th JSAP Spring Meeting 2011 (24p-BN-11)
  • Single photon emission from nitrogen delta-doped semiconductors
    Hiroyuki Yaguchi
    SPIE Photonics West OPTO (7945-89) (San Francisco, USA)
    January 27, 2011