Presentation 1992
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Realization of SiGe/Si Heterostructures with Abrupt Interfaces and Their Optical
Properties
Yasuhiro Shiraki, Susumu Fukatsu, Ken Fujita, Noritaka Usami, Hiroyuki Yaguchi, Hironobu Yoshida and Ryoichi Ito
2nd International Symposium on New Phenomena in Mesoscopic Structures (Hawaii)
December, 1992
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(In Japanese) MOVPE法によるGaAs上への立方晶GaNの作製と評価
Kentaro Onabe, Seiro Miyoshi, Hiroyuki Yaguchi, Yasuhiro Shiraki
日本学術振興会光電相互変換第125委員会第141回委員会
October, 1992
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Highly Conductive p-type Cubic GaN Epitaxial Films on GaAs
Seiro Miyoshi, Naoki Ohkouchi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
19th International Symposium on Gallium Arsenide and Related Compounds
(Karuizawa, Japan)
September, 1992
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Surface Segregation and Heterostructures
Yasuhiro Shiraki, Susumu Fukatsu, Ken Fujita, Koji Muraki, Hiroyuki Yaguchi and Ryoichi Ito
3rd China-Japan Symposium on Thin Films (Huangshan, China)
September, 1992
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(In Japanese) Phororeflectance Study of Ge/SiGe Strained Quantume Well Structures of Ge(100) Substrates
Hiroyuki Yaguchi, Kaori Tai, Keizo Takemasa, Kentaro Onabe, Yasuhiro Shiraki, and Ryoichi Ito
応用物理学会第53回講演会 (17pZG8) (Suita, Japan)
September 17, 1992
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(In Japanese) Second-harmonic generation from Si/Ge superlattice
Makoto Ohashi, Hiroyuki Yaguchi, Susumu Fukatsu, Takashi Kondo, Yasuhiro Shiraki, Ryoichi Ito, and Satrou Kano
応用物理学会第53回講演会 (16pW17) (Suita, Japan)
September 16, 1992
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(In Japanese) P-type conduction in cubic GaN films
Seiro Miyoshi, Naoki Ohkouchi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, and Ryoichi Ito
応用物理学会第53回講演会 (17aZF7) (Suita, Japan)
September 17, 1992
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(In Japanese) MOVPE growth of GaAsN
Naoki Ohkouchi, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, and Ryoichi Ito
応用物理学会第53回講演会 (17aZF10) (Suita, Japan)
September 17, 1992
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(In Japanese) PLE Characterizaion of GaAs/GaAsP Strained-Barrier Quantum Wells
Kazunobu Ota, Hiroyuki Yaguchi, Yutaka Takahashi, Koji Muraki, Kentaro Onabe, Yasuhiro Shiraki, and Ryoichi Ito
応用物理学会第53回講演会 (18pZB10) (Suita, Japan)
September 18, 1992
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Intersubband Light Absorption in n-Type Si/SiGe Multiple Quantum Well Structures
Formed by Sb Segregant-Assisted Growth
Yasuhiro Shiraki, Ken Fujita, Susumu Fukatsu, Hiroyuki Yaguchi and Ryoichi Ito
7th International Conference on Molecular Beam Epitaxy (Schwäbisch-Gmünd, Germany)
August, 1992
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Is Low Temperature Growth the Solution to Abrupt Si/Si1-xGex
Interface Formation?
Susumu Fukatsu, Noritaka Usami, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
7th International Conference on Molecular Beam Epitaxy (Schwäbisch-Gmünd, Germany)
August, 1992
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Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxy
Ken Fujita, Susumu Fukatsu, Noritaka Usami, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
International Symposium on Shallow Impurities in Semiconductors (Kobe, Japan)
August, 1992
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Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
Hiroyuki Yaguchi, Xiong Zhang, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
1992 International Conference on Solid Sated Devices and Materials (B-4-5) (Tsukuba, Japan)
August, 1992
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MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine
Seiro Miyoshi, Kentaro Onabe, Naoki Ohkouchi, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
Eleventh Alloy Semiconductor Physics and Electronics Symposium (VII-13) (Kyoto, Japan)
July 10, 1992
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Determination of the Band Offsets in GaAsP Strained-Layer Quantum Well
Structures Using Photoreflectance Spectroscopy
Hiroyiki Yaguchi, Yujiro Hara, Xiong Zhang, Kazunobu Ota, Masaki Nagahara, Kentaro Onabe, Yasuhiro Shiraki
and Ryoichi Ito
Eleventh Alloy Semiconductor Physics and Electronics Symposium (VII-11) (Kyoto, Japan)
July 10, 1992
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MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine
Seiro Miyoshi, Kentaro Onabe, Naoki Ohkouchi, Hiroyki Yaguchi, Ryoichi Ito, Susumu Fukatsu and Yasuhiro Shiraki
6th International Conference on Metalorganic Vapor Phase Epitaxy (Cambridge, USA)
June, 1992
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(In Japanese) Photoreflectance spectroscopy of GaAs/GaAsP strained-barrier quantume well structures
Hiroyuki Yaguchi, Xiong Zhang, Kazunobu Ota, Masaki Nagahara, Kentaro Onabe, Susumu Fukatsu, Yasuhiro Shiraki, and Ryoichi Ito
The 39th Spring Meeting, 1992; The Japan Society of Applied Physics and Related Societis (29aST17) (Narashino, Japan)
March 29, 1992
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(In Japanese) フォトリフレクタンス法によるGaAsP/GaP歪量子井戸の評価
Yujiro Hara, Xiong Zhang, Hiroyuki Yaguchi, Kentaro Onabe, Susumu Fukatsu, Yasuhiro Shiraki, and Ryoichi Ito
The 39th Spring Meeting, 1992; The Japan Society of Applied Physics and Related Societis (29aST18) (Narashino, Japan)
March 29, 1992
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(In Japanese) MOVPE growth of cubic GaN using DMHy
Seiro Miyoshi, Naoki Ohkouchi, Hiroyuki Yaguchi, Kentaro Onabe, Susumu Fukatsu, Yasuhiro Shiraki, and Ryoich Ito
The 39th Spring Meeting, 1992; The Japan Society of Applied Physics and Related Societis (28pZB3) (Narashino, Japan)
March 28, 1992
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(In Japanese) SiGe超格子における電子のサブバンド間光吸収
Ken Fujita, Susumu Fukatsu, Hiroyuki Yaguchi, Yasuhiro Shiraki, and Ryoichi Ito
The 39th Spring Meeting, 1992; The Japan Society of Applied Physics and Related Societis (30aZC11) (Narashino, Japan)
March 30, 1992
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(In Japanese) Si/Ge heterostructure growth in a Ga-mediated segregant assisted growth
Noritaka Usami, Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, and Ryoichi Ito
The 39th Spring Meeting, 1992; The Japan Society of Applied Physics and Related Societis (30pZC11) (Narashino, Japan)
March 30, 1992
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(In Japanese) 低温成長(LTG)と表面制御エピタキシー(SAG)によるSi/Ge界面の形成
Susumu Fukatsu, Noritaka Usami, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, and Ryoichi Ito
The 39th Spring Meeting, 1992; The Japan Society of Applied Physics and Related Societis (30pZC12) (Narashino, Japan)
March 30, 1992