Yaguchi

Presentation 1993


  • (In Japanese) Valence subband structures of strained-layer quantum wells calculated including spin-orbit split-off bands
    Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 54th Autumn Meeting, 1993; The Japan Society of Applied Physics (27p-ZX-9) (Sapporo, Japan)
    September 27, 1993
  • (In Japanese) MOVPE-grown GaAs/GaAsP heterointerface smoothed by growth interruption
    Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 54th Autumn Meeting, 1993; The Japan Society of Applied Physics (30p-ZT-5) (Sapporo, Japan)
    September 30, 1993
  • (In Japanese) Excitation Wavelength Dependence of Photoreflectance Spectra of GaAs/GaAsP Quantum Wells
    Keizo Takemasa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 54th Autumn Meeting, 1993; The Japan Society of Applied Physics (30p-ZW-8) (Sapporo, Japan)
    September 30, 1993
  • (In Japanese) MOVPE Growth and Photoluminescence Properties of GaAs/GaAsP Quantum Wirers
    Wugen Pan, X. Ma, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 54th Autumn Meeting, 1993; The Japan Society of Applied Physics (27a-ZX-8) (Sapporo, Japan)
    September 27, 1993
  • (In Japanese) Photoluminescence spectra of (111)-GaAs/GaAsP strained-layer quantum well structures
    Xiong Zhang, Koichi Karaki, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 54th Autumn Meeting, 1993; The Japan Society of Applied Physics (30p-ZW-6) (Sapporo, Japan)
    September 30, 1993
  • (In Japanese) Transition from N-doped GaP to GaP1-xNx alloy
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 54th Autumn Meeting, 1993; The Japan Society of Applied Physics (30a-ZT-10) (Sapporo, Japan)
    September 30, 1993
  • (In Japanese) MOVPE Growth and PL measurements of GaPN/GaP Quantum Wells
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 54th Autumn Meeting, 1993; The Japan Society of Applied Physics (30a-ZT-11) (Sapporo, Japan)
    September 30, 1993
  • (In Japanese) MOVPE Growth of Cubic GaN on Λ-rided and V-grooved GaAs Substrates
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 54th Autumn Meeting, 1993; The Japan Society of Applied Physics (30a-ZS-10) (Sapporo, Japan)
    September 30, 1993
  • Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy
    Hiroyuki Yaguchi, Kaori Tai, Keizo Takemasa, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    1993 International Conference Solid Stated Device and Materials (S-I-6-6) (Makuhari, Japan)
    August 1993
  • MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    1993 International Conference Solid Stated Device and Materials (D-1-4) (Makuhari, Japan)
    August 1993
  • MOVPE Growth of Strained GaP1-xNx and GaP1-xNx/GaP Quantum Wells
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    20th International Symposium on Gallium Arsenide and Related Compounds (MoB6) (Freiburg, Germany)
    August 30, 1993
  • Determination of Band Offsets in GaAsP/GaP Strained-Layer Quantum Well Structures Using Photoreflectance and Photoluminescence Spectroscopy
    Yujiro Hara, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    20th International Symposium on Gallium Arsenide and Related Compounds (TuB7) (Freiburg, Germany)
    August 31, 1993
  • Valence-Subband Level Crossing in GaAs/GaAsP Strained-Barrier Quantum Well Structures Observed by Circularly Polarized Photoluminescence Excitation Spectroscopy
    Hiroyuki Yaguchi, Kazunobu Ota, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    6th International Conference on Modulated Semiconductor Structures (TuP16) (Garmisch-Partenkirchen, Germany)
    August 24, 1993
  • Formation of SiGe/Si Quantum Wells and Their Optical Properties
    Yasuhiro Shiraki, Susumu Fukatsu, Ken Fujita, Noritaka Usami, Hiroyuki Yaguchi and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (II-1) (Izu-Nagaoka, Japan)
    July 14-16, 1993
  • Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures using circularly polarized photoluminescence excitation spectroscopy
    Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Yutaka Takahashi, Koji Muraki and Yasuhiro Shiraki
    12th Symposium on Alloy Semiconductor Physics and Electronics (II-4) (Izu-Nagaoka, Japan)
    July 14-16, 1993
  • MOVPE Growth of GaAs/GaAsP Quantum Wires
    Wugen Pan, X. Ma, Z. Fu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (IV-7) (Izu-Nagaoka, Japan)
    July 14-16, 1993
  • Improvement of Crystal Quality of Cubic GaN by MOVPE Selective Growth in Small Areas on Patterned GaAs Substrates
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (VI-9) (Izu-Nagaoka, Japan)
    July 14-16, 1993
  • MOVPE Growth of GaAs1-xNx Alloys
    Naoki Ohkouchi, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (VI-10) (Izu-Nagaoka, Japan)
    July 14-16, 1993
  • MOVPE Growth of GaP1-xNx Epitaxial Films on GaP
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (VI-11) (Izu-Nagaoka, Japan)
    July 14-16, 1993
  • Photoreflectance Study of Interface Roughness in Ge/SiGe Heterostructures
    Hiroyuki Yaguchi, Kaori Tai, Keizao Takemasa, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (VII-7) (Izu-Nagaoka, Japan)
    July 14-16, 1993
  • (In Japanese) 立方晶GaNのGaAs上微小領域選択成長
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryocihi Ito
    原子レベルでの結晶成長機構第5回研究会 (Sapporo, Japan)
    June 1993
  • (In Japanese) Photoreflectance Study of the Interface Roughness in Ge/SiGe Heterostructures
    Hiroyuki Yaguchi, Kaori Tai, Keizo Takemasa, Kentaro Onabe, Susumu Fukatsu, Yasuhiro Shiraki, Ryoichi Ito
    The 40th Spring Meeting, 1993; The Japan Society of Applied Physics and Related Societies (30a-sZM-3) (Tokyo, Japan)
    March 30, 1993
  • (In Japanese) MOVPE Growth of GaP1-xNx (x<0.03) Thin Films
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 40th Spring Meeting, 1993; The Japan Society of Applied Physics and Related Societies (1p-ZQ-2) (Tokyo, Japan)
    April 1, 1993
  • (In Japanese) MOVPE Growth of Cubic GaN in Limited Areas on GaAs
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 40th Spring Meeting, 1993; The Japan Society of Applied Physics and Related Societies (1a-ZA-5) (Tokyo, Japan)
    April 1, 1993