Yaguchi

Presentation 1993


  • (In Japanese) スピン軌道分裂バンドの影響を考慮した歪量子井戸の価電子帯サブバンド構造
    Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第54回講演会 (27pZX9) (Sapporo, Japan) September 27, 1993
  • (In Japanese) MOVPE成長GaAs/GaAsP量子井戸ヘテロ界面の成長中断による平坦化
    Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第54回講演会 (30pZT5) (Sapporo, Japan) September 30, 1993
  • (In Japanese) GaAs/GaAsP量子井戸のPRスペクトルの励起波長依存性
    Keizo Takemasa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第54回講演会 (30pZW8) (Sapporo, Japan) September 30, 1993
  • (In Japanese) GaAs/GaAsP量子細線のMOVPE成長とPL特性
    Wugen Pan, 馬 驍宇, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第54回講演会 (27aZX8) (Sapporo, Japan) September 27, 1993
  • (In Japanese) (111)-GaAs/GaAsP歪み量子井戸構造のPL特性
    Xiong Zhang, Koichi Karaki, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第54回講演会 (30pZW6) (Sapporo, Japan) September 30, 1993
  • (In Japanese) 窒素ドープGaPからGaPN混晶への遷移
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第54回講演会 (30aZT10) (Sapporo, Japan) September 30, 1993
  • (In Japanese) GaPN/GaP量子井戸構造の作製とPL評価
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第54回講演会 (30aZT11) (Sapporo, Japan) September 30, 1993
  • (In Japanese) ΛリッジおよびV溝形成GaAs基板上の立方晶GaNのMOVPE成長
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第54回講演会 (30aZS10) (Sapporo, Japan) September 30, 1993
  • Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy
    Hiroyuki Yaguchi, Kaori Tai, Keizo Takemasa, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    1993 International Conference Solid Stated Device and Materials (S-I-6-6) (Makuhari, Japan) August 1993
  • MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    1993 International Conference Solid Stated Device and Materials (D-1-4) (Makuhari, Japan) August 1993
  • MOVPE Growth of Strained GaP1-xNx and GaP1-xNx/GaP Quantum Wells
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    20th International Symposium on Gallium Arsenide and Related Compounds (Freiburg, Germany) August, 1993
  • Determination of Band Offsets in GaAsP/GaP Strained-Layer Quantum Well Structures Using Photoreflectance and Photoluminescence Spectroscopy
    Yujiro Hara, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    20th International Symposium on Gallium Arsenide and Related Compounds (Freiburg, Germany) August 1993
  • Valence-Subband Level Crossing in GaAs/GaAsP Strained-Barrier Quantum Well Structures Observed by Circularly Polarized Photoluminescence Excitation Spectroscopy
    Hiroyuki Yaguchi, Kazunobu Ota, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    6th International Conference on Modulated Semiconductor Structures (TuP16) (Garmisch-Partenkirchen, Germany) August 24, 1993
  • Formation of SiGe/Si Quantum Wells and Their Optical Properties
    Yasuhiro Shiraki, Susumu Fukatsu, Ken Fujita, Noritaka Usami, Hiroyuki Yaguchi and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (II-1) (Izu-Nagaoka, Japan) July 1993
  • Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures using circularly polarized photoluminescence excitation spectroscopy
    Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Yutaka Takahashi, Koji Muraki and Yasuhiro Shiraki
    12th Symposium on Alloy Semiconductor Physics and Electronics (II-4) (Izu-Nagaoka, Japan) July 1993
  • MOVPE Growth of GaAs/GaAsP Quantum Wires
    Wugen Pan, X. Ma, Z. Fu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (IV-7) (Izu-Nagaoka, Japan) July 1993
  • Improvement of Crystal Quality of Cubic GaN by MOVPE Selective Growth in Small Areas on Patterned GaAs Substrates
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (VI-9) (Izu-Nagaoka, Japan) July 1993
  • MOVPE Growth of GaAs1-xNx Alloys
    Naoki Ohkouchi, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (VI-10) (Izu-Nagaoka, Japan) July 1993
  • MOVPE Growth of GaP1-xNx Epitaxial Films on GaP
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (VI-11) (Izu-Nagaoka, Japan) July 1993
  • Photoreflectance Study of Interface Roughness in Ge/SiGe Heterostructures
    Hiroyuki Yaguchi, Kaori Tai, Keizao Takemasa, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    12th Symposium on Alloy Semiconductor Physics and Electronics (VII-7) (Izu-Nagaoka, Japan) July 1993
  • (In Japanese) 立方晶GaNのGaAs上微小領域選択成長
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryocihi Ito
    原子レベルでの結晶成長機構第5回研究会 (Sapporo, Japan) June 1993
  • (In Japanese) PR法によるGe/SiGeヘテロ界面の平坦性の検討
    Hiroyuki Yaguchi, Kaori Tai, Keizo Takemasa, Kentaro Onabe, Susumu Fukatsu, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第40回連合講演会 (30asZM3) (Tokyo, Japan) March 30, 1993
  • (In Japanese) GaP1-xNx (x<0.03)薄膜のMOVPE成長
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第40回連合講演会 (1pZQ2) (Tokyo, Japan) April 1, 1993
  • (In Japanese) GaAs微小領域への立方晶GaNのMOVPE成長
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第40回連合講演会 (1aZa5) (Tokyo, Japan) April 1, 1993