Yaguchi

Publication 2009


  • Optical and electrical characterizations of 4H-SiC-oxide interfaces by spectroscopic ellipsometry and capacitance-voltage measurements
    H. Hashimoto, Y. Hijikata, H. Yaguchi, S. Yoshida
    Applied Surface Science Vol. 255, No. 20, pp. 8648-8653 (2009).
    DOI: 10.1016/j.apsusc.2009.06.058
  • Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model
    Y. Hijikata, H. Yaguchi and S. Yoshida
    Materials Science Forum Vols. 615-617, pp. 489-492 (2009).
    DOI: 10.4028/www.scientific.net/MSF.615-617.489
  • Characterization of 4H-SiC-SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
    H. Seki, T. Wakabayashi, Y. Hijikata, H. Yaguchi, and S. Yoshida
    Materials Science Forum Vols. 615-617, pp. 505-508 (2009).
    DOI: 10.4028/www.scientific.net/MSF.615-617.505
  • Observation of SiC Oxidation in Ultra-thin Oxide Regime by In-situ Spectroscopic Ellipsometry
    T. Takaku, Y. Hijikata, H. Yaguchi and S. Yoshida
    Materials Science Forum Vols. 615-617, pp. 509-512 (2009).
    DOI: 10.4028/www.scientific.net/MSF.615-617.509
  • A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
    Y. Hijikata, H. Yaguchi, and S. Yoshida
    Applied Physics Express Vol. 2, No. 2, pp. 021203-1-3 (2009).
    DOI: 10.1143/APEX.2.021203
  • Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry
    T. Yamamoto, Y. Hijikata, H. Yaguchi and S. Yoshida
    Materials Science Forum Vols. 600-603, pp. 667-670 (2009).
    DOI: 10.4028/www.scientific.net/MSF.600-603.667
  • Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
    Y. Hijikata, T. Yamamoto, H. Yaguchi and S. Yoshida
    Materials Science Forum Vols. 600-603, pp. 663-666 (2009).
    DOI: 10.4028/www.scientific.net/MSF.600-603.663