Yaguchi

Publication 2006


  • Simultaneous Determination of Carrier Concentrations, Mobilities and Thickness of SiC Homo-Epilayers Using Infrared Reflectance Spectroscopy
    S. Oishi, Y. Hijikata, H. Yaguchi, and S. Yoshida
    Japanese Journal of Applied Physics, Vol. 45, No. 42-45, pp. L1226-L1229 (2006).
    DOI: 10.1143/JJAP.45.L1226
  • Characterization of Oxide Films on 4H-SiC Epitaxial (000-1) Faces by High-Energy-Resolution Photoemission Spectroscopy: Comparison between Wet and Dry Oxidation
    Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, and T. Hattori
    Journal of Applied Physics, Vol. 100, No. 5, pp. 053710-1-7 (2006).
    DOI: 10.1063/1.2345471
  • Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
    Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, and T. Hattori
    Materials Science Forum, Vol. 527-529, pp. 1003-1006 (2006).
    DOI: 10.4028/www.scientific.net/MSF.527-529.1003
  • Real Time Observation of SiC Oxidation using In-Situ Ellipsometer
    K. Kakubari, R. Kuboki, Y. Hijikata, H. Yaguchi, and S. Yoshida
    Materials Science Forum, Vol. 527-529, pp. 1031-1034 (2006).
    DOI: 10.4028/www.scientific.net/MSF.527-529.1031
  • RF-MBE growth of cubic InN films on MgO (001) substrates
    Y. Iwahashi, H. Yaguchi, A. Nishimoto, M. Orihara, Y. Hijikata, S. Yoshida
    Physica Status Solidi C Vol. 3, No. 6, pp. 1515-1518 (2006).
    DOI: 10.1002/pssc.200565312
  • Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys
    H. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, N. Usami, D. Aoki, and K. Onabe
    Physica Status Solidi C Vol. 3, No. 6, pp. 1907-1910 (2006).
    DOI: 10.1002/pssc.200565372