Publication 2019


  • Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates
    Kazumasa Okura, Kengo Takamiya, Shuhei Yagi, and Hiroyuki Yaguchi
    Japanese Journal of Applied Physics Vol. 58, No. SC, pp. SC1051-1-6 (2019).
    DOI: 10.7567/1347-4065/ab106a
  • Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing
    Yosuke Mogami, Shogo Motegi, Atsushi Osawa, Kazuto Osaki, Yukitake Tanioka, Atsushi Maeoka, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi, and Hideki Hirayama
    Japanese Journal of Applied Physics Vol. 58, No. SC, pp. SC1029-1-4 (2019).
    DOI: 10.7567/1347-4065/ab1066
  • Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure
    Md. Dulal Haque, Norihiko Kamata, Abu Zafor Muhammad Touhidul Islam, Zentaro Honda, Shuhei Yagi, Hiroyuki Yaguchi
    Optical Materials Vol. 89, No. 16, pp. 521-527 (2019).
    DOI: 10.1016/j.optmat.2019.01.047
  • (In Japanese) Progress of UVC-LEDs using DC sputter AlN templates
    Yosuke Mogami, Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka, Yuri Itokazu, Shunsuke Kuwaba, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi, and Hideki Hirayama
    IEICE technical report Vol. 119, No. 304, pp. 85-88 (2019).