Yaguchi

Presentation 2002


  • (In Japanese) Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometer (II)
    Masahiko Midorikawa, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Tomihiro Kamiya, Sadafumi Yoshida
    応用物理学会SiCおよび関連ワイドギャップ半導体研究会第11回講演会 (II-14) (Tokyo, Japan)
    November 21, 2002
  • (In Japanese) Initial stage of SiC oxidation studied by spectroscopic ellipsometer
    Satoshi Sekiguchi, Satosi Kawato, Satoshi Yoshida, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    応用物理学会SiCおよび関連ワイドギャップ半導体研究会第11回講演会 (II-15) (Tokyo, Japan)
    November 21, 2002
  • (In Japanese) Ultraviolet photoelectron spectroscopy studies on dry-oxide/4H-SiC interfaces
    Yasuto Hijikata, Hiroyuki Yaguchi, Yuuki Ishida, Masahito Yoshikawa, Tomihiro Kamiya, Sadafumi Yoshida
    応用物理学会SiCおよび関連ワイドギャップ半導体研究会第11回講演会 (II-17) (Tokyo, Japan)
    November 21, 2002
  • (In Japanese) Characterization of the carrier concentration and mobility in 6H-SiC wafers using infrared spectroscopy
    Katsutoshi Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Shinichi Nakashima
    応用物理学会SiCおよび関連ワイドギャップ半導体研究会第11回講演会 (IV-12) (Tokyo, Japan)
    November 21, 2002
  • (In Japanese) Spectroscopic characterization of electrial propertes in 4H-SiC crystals
    Shinichi Nakashima, Hiroshi Harima, Katsutoshi Narita, Sadafumi Yoshida, Hiroyuki Yaguchi
    応用物理学会SiCおよび関連ワイドギャップ半導体研究会第11回講演会 (IV-13) (Tokyo, Japan)
    November 21, 2002
  • (In Japanese) Growth of cubic GaN on 3C-SiC(001) by MBE using NH3 (VI)
    Tetsuya Sasaki, Teruto Miura, Tomonari Nakada, Kenji Nishida, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics (25p-YG-5) (Niigata, Japan)
    September 25, 2002
  • (In Japanese) Characterization of the carrier concentration and mobility in SiC wafers using infrared spectroscopy (II)
    Katsutoshi Narita, Yasuto Hijikat, Hiroyuki Yaguchi, Sadafumi Yoshida, Shinichi Nakashima
    The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics (24p-P3-7) (Niigata, Japan)
    September 24, 2002
  • (In Japanese) Initial stage of SiC oxidation studied by spectroscopic ellipsometer
    Yasuto Hijikata, Satoshi Sekiguchi, Katsutoshi Narita, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics (25a-P7-22) (Niigata, Japan)
    September 25, 2002
  • (In Japanese) Characterization of SiO2/SiC interfaces by spectroscopic ellipsometer (III)
    Masahiko Midorikawa, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Hisayoshi Itoh, Sadafumi Yoshida
    The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics (25a-P7-23) (Niigata, Japan)
    September 25, 2002
  • (In Japanese) XPS Studies of the Post Oxidation Processes on the Oxide/SiC Interfaces (II)
    Yasuto Hijikata, Hiroyuki Yaguchi, Yuuki Ishida, Masahito Yoshikawa, Hisayoshi Itoh, Sadafumi Yoshida
    The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics(25a-P7-24) (Niigata, Japan)
    September 25, 2002
  • (In Japanese) Spectroscopic ellipsometry study on optical constants of GaP1-xNx alloys
    Hiroshi Kanaya, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Seiro Miyoshi, Kentaro Onabe
    The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics (24a-YD-11) (Niigata, Japan)
    September 24, 2002
  • (In Japanese) Raman study of GaAsN alloys
    Makoto Nishihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki, Akira Hida, Kentaro Onabe
    The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics (24p-YD-3) (Niigata, Japan)
    September 24, 2002
  • Time-Resolved Photoluminescence Study of GaAsN Alloys
    Hiroyuki Yaguchi, Motoyoshi Baba, Hidefumi Akiyama, Daiichiro Aoki, Kentaro Onabe, Yasuto Hijikata and Sadafumi Yoshida
    International Workshop on Nitride Semiconductors (Aachen, Germany)
    July, 2002
  • Microstructure and absorption coefficient of Si-rich multicrystalline-SiGe bulk crystal with microscopic compositional distribution for solar cell applications
    Tatsuya Takahashi, Kozo Fujiwara, Noritaka Usami, Toru Ujihara, Gen Sazaki, Yoshihiro Murakami, Hiroyuki Yaguchi, Kazuo Obara, Toetsu Shishido and Kazuo Nakajima
    21st Electronic Materials Symposium (H10) (Izu-Nagaoka, Japan)
    June 21, 2002
  • Time-resolved photoluminescence of GaAsN alloys grown by metalorganic vapor phase epitaxy
    Hiroyuki Yaguchi, Yasuto Hijikata, Sadafumi Yoshida, Motoyoshi Baba, Hidefumi Akiyama, Daiichiro Aoki and Kentaro Onabe
    21st Electronic Materials Symposium (I6) (Izu-Nagaoka, Japan)
    June 21, 2002
  • (In Japanese) Optical properties of multicrystalline SiGe with microscopic compostional distributuion
    Tatsuya Takahashi, Kozo Fujiwara, Noritaka Usami, Toru Ujihara, Gen Sazaki, Yoshihiro Murakami, Hiroyuki Yaguchi, Kazuo Obara, Toetsu Shishido, Kazuo Nakajima
    The 49th Spring Meeting, 2002: The Japan Society of Applied Physics and Related Societies (27a-ZR-4) (Hiratsuka, Japan)
    March 27, 2002
  • (In Japanese) Photoreflectance study of GaAsN alloys
    Makoto Nishihara, Kazuo Matsumoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki, Ryuji Katayama, Kentaro Onabe
    The 49th Spring Meeting, 2002: The Japan Society of Applied Physics and Related Societies(28p-ZQ-6) (Hiratsuka, Japan)
    March 28, 2002
  • (In Japanese) Time-resolved photoluminescence study of GaAsN alloys (II)
    Hiroyuki Yaguchi, Hidefumi Akiyama, Motoyoshi Baba, Daiichiro Aoki, Kentaro Onabe, Yasuto Hijikata, Sadafumi Yoshida
    The 49th Spring Meeting, 2002: The Japan Society of Applied Physics and Related Societies (28p-ZQ-13) (Hiratsuka, Japan)
    March 28, 2002
  • (In Japanese) Growth of cubic GaN on 3C-SiC(001) by MBE using NH3 (V)
    Tetsuya Sasaki, Hideyuki Watanabe, Tomonari Nakada, Daisuke Ogawa, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 49th Spring Meeting, 2002: The Japan Society of Applied Physics and Related Societies (28p-ZM-26) (Hiratsuka, Japan)
    March 28, 2002
  • (In Japanese) Characterization of the carrier concentration and mobility in SiC wafers using infrared spectroscopy
    Katsutoshi Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Shininchi Nakashima, 中武泰啓
    The 49th Spring Meeting, 2002: The Japan Society of Applied Physics and Related Societies (29a-ZR-4) (Hiratsuka, Japan)
    March 29, 2002
  • (In Japanese) XPS studies of the post oxidation processes effects on the oxide/SiC interfaces
    Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Hisayoshi Itoh, Sadafumi Yoshida
    The 49th Spring Meeting, 2002: The Japan Society of Applied Physics and Related Societies (29p-ZR-9) (Hiratsuka, Japan)
    March 29, 2002
  • (In Japanese) Characterization of SiO2/SiC interfaces by spectroscopic ellipsometer (II)
    Masahiko Midorikawa, Yuichi Tomioka, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Hisayoshi Itoh, Yuuki Ishida, Sadafumi Yoshida
    The 49th Spring Meeting, 2002: The Japan Society of Applied Physics and Related Societies (29a-ZR-10) (Hiratsuka, Japan)
    March 29, 2002
  • (In Japanese) Growth of GaN films on Si(111) substrates by gas source MBE
    Tomonari Nakada, Hirotaka Matsubara, Tetsuya Sasaki, Hideyuki Watanabe, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 49th Spring Meeting, 2002: The Japan Society of Applied Physics and Related Societies (30a-ZM-16) (Hiratsuka, Japan)
    March 30, 2002
  • Characterization of Oxide/SiC Interfaces by Spectroscopic Ellipsometry and XPS
    Sadafumi Yoshida, Yuichi Tomioka, Masahiko Midorikawa, Yasuto Hijikata, and Hiroyuki Yaguchi
    Japanese-Spanish-German Workshop 2002 on Recent Progress in Advanced Materials, Devices, Processing and Characterization (Cordoba, Spain) March, 2002