Yaguchi

Presentation 1995


  • (In Japanese) 3C-SiC(001)上立方晶GaNのMOVPE成長
    Shigeki Hashimoto, Hiroyuki Yaguchi, Suguru Akiyama, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoich Ito
    SiC及び関連ワイドギャップ半導体研究会第4回講演会 (Tokyo, Japan) Decenber, 1995
  • Temperature dependent excitonic absorption in ZnCdSe/ZnSe single quantum wells
    B. P. Zhang, T. Yasui, Y. Yasuda, Y. Segawa, H. Yaguchi, and Y. Shiraki
    Asia Symposium on Solid State Photophysics (Nara, Japan) November, 1995
  • Nitrogen Concentration Dependence of Photoluminescene Decay Time in GaP1-xNx Alloys
    H. Yaguchi, S. Miyoshi, H. Arimoto, S. Saito, H. Akiyama, K. Onabe, Y. Shiraki, R. Ito
    Topical Workshop on III-V Nitrides (Nagoya, Japan) September, 1995
  • MOVPE Growth of Cubic GaN on 3C-SiC (001) Substrates Using 1,1-Dimethylhydrazine
    S. Hashimoto, H. Yaguchi, S. Akiyama, K. Onabe, Y. Shiraki, R. Ito, H. Nagasawa, Y. Yamaguchi
    Topical Workshop on III-V Nitrides (Nagoya, Japan) September, 1995
  • MOVPE Growth and Characterization of Cubic GaN on GaAs
    K. Onabe, S. Miyoshi, M. Nagahara, H. Yaguchi, Y. Shiraki, R. Ito, N. Kuwano, Y. Nagatomo, K. Kobayashi and K. Oki
    Topical Workshop on III-V Nitrides (Nagoya, Japan) September, 1995
  • The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
    W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and R. Ito
    1995 International Conference on Solid State Devices and Materials (PD-3-6) (Osaka, Japan) August, 1995
  • Time-Resolved Photoluminescence Study of Radiative Transition Processes in GaP1-xNx Alloys
    H. Yaguchi, S. Miyoshi, H. Arimoto, S. Saito, H. Akiyama, K. Onabe, Y. Shiraki, R. Ito
    22nd International Symposium on Compound Semiconductors (WeA1-2) (Cheju Island, Korea) August 30, 1995
  • Strain Effect on Direct and Indirect-Gap Band Lineups of GaAsP/GaP Quantum Wells
    A. Shima, H. Yaguchi, K. Onabe, Y. Shiraki, R. Ito
    22nd International Symposium on Compound Semiconductors (FrA1-2) (Cheju Island, Korea) September 2, 1995
  • Polarization Properties of GaAsP/AlGaAs Tensilely Strained Quantum Wire Structures on V-Grooved GaAs Substrates
    W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki
    22nd International Symposium on Compound Semiconductors (WeA3-4) (Cheju Island, Korea) August 30, 1995
  • (In Japanese) GaP1-xNx混晶の時間分解フォトルミネッセンス
    Hiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Yasuhiro Shiraki, Ryoich Ito
    応用物理学会第56回講演会 (28pZE8) (Kanazawa, Japan) August 28, 1995
  • (In Japanese) GaAs1-xPx/GaP歪量子井戸におけるバンドラインアップの P組成依存性
    Akio Shima, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第56回講演会 (26pZM4) (Kanazawa, Japan) August 26, 1995
  • (In Japanese) AlGaAs/GaAsPヘテロ構造のバンドラインアップの Al組成依存性
    Keizo Takemasa, Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito伊
    応用物理学会第56回講演会 (26pZM3) (Kanazawa, Japan) August 26, 1995
  • (In Japanese) 3C-SiC(001)上立方晶GaNのMOVPE成長
    Shigeki Hashimoto, Hiroyuki Yaguchi, Suguru Akiyama, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第56回講演会 (27pZE12) (Kanazawa, Japan) August 27, 1995
  • (In Japanese) V溝基板上へのAlGaAs自然量子井戸のMOVPE成長
    Wugen Pan, Mitsuteru Ishikawa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第56回講演会 (26pZE1) (Kanazawa, Japan) August 26, 1995
  • (In Japanese) 自然量子井戸を用いた矩形AlGaAs/AlAs量子細線
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第56回講演会 (26pZM6) (Kanazawa, Japan) August 26, 1995
  • Time-resolved photoluminescence study of GaP1-xNx alloys
    Hiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Y. Shiraki and R. Ito
    14th Electronic Materials Symposium (B17) (Izu-Nagaoka, Japan) July 5, 1995
  • Strain effect on direct- and indirect-gap band lineups of GaAs1-xPx/GaP quantum wells
    Akio Shima, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    14th Electronic Materials Symposium (D2) (Izu-Nagaoka, Japan) July 6, 1995
  • Aluminum Composition Dependence of the Band Lineup of AlGaAs/GaAsP Heterostructures
    Keizo Takemasa, Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    14th Electronic Materials Symposium (D6) (Izu-Nagaoka, Japan) July 6, 1995
  • Metalorganic vapor phase epitaxial growth and polarization properties of tensile-strained GaAsP/AlGaAs quantum wires
    Wugen Pan, Mitsuteru Ishikawa, T. Hasegawa, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    14th Electronic Materials Symposium (F13) (Izu-Nagaoka, Japan) July 6, 1995
  • The in situ growth of lateral confinement enhanced rectangular AlGaAs/AlAs quantum wires by utilizing the spontaneous vertical quantum wells
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Noritaka Usami and Yasuhiro Shiraki
    14th Electronic Materials Symposium (S7) (Izu-Nagaoka, Japan) July 7, 1995
  • (In Japanese) 光反射法によるZnCdSe/ZnSe単一量子井戸の光学評価
    Baoping Zhang, Takashi Yasuda, 安井 隆成, Hiroyuki Yaguchi, 瀬川 勇三郎, Yasuhiro Shiraki
    応用物理学会第43回連合講演会(28aZM10) (Isehara, Japan) March 28, 1995
  • (In Japanese) Tight-Binding 法によるGaP1-xNx (x=0.25, 0.5, 0.75) のバンド構造
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第42回連合講演会 (30pZH16) (Isehara, Japan) March 30, 1995