Presentation 1995


  • (In Japanese) 3C-SiC(001)上立方晶GaNのMOVPE成長
    Shigeki Hashimoto, Hiroyuki Yaguchi, Suguru Akiyama, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoich Ito
    SiC及び関連ワイドギャップ半導体研究会第4回講演会 (Tokyo, Japan) Decenber, 1995
  • Temperature dependent excitonic absorption in ZnCdSe/ZnSe single quantum wells
    Baoping Zhang, Takanari Yasui, Takashi Yasuda, Yusaburo Segawa, Hiroyuki Yaguchi, and Yasuhiro Shiraki
    Asia Symposium on Solid State Photophysics (Nara, Japan) November, 1995
  • Nitrogen Concentration Dependence of Photoluminescene Decay Time in GaP1-xNx Alloys
    Hiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    Topical Workshop on III-V Nitrides (Nagoya, Japan) September, 1995
  • MOVPE Growth of Cubic GaN on 3C-SiC (001) Substrates Using 1,1-Dimethylhydrazine
    Shigeki Hashimoto, Hiroyuki Yaguchi, Suguru Akiyama, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito, Hiroyuki Nagasawa, Yoichi Yamaguchi
    Topical Workshop on III-V Nitrides (Nagoya, Japan) September, 1995
  • MOVPE Growth and Characterization of Cubic GaN on GaAs
    Kentaro Onabe, Seiro Miyoshi, Masaki Nagahara, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito, Noriyuki Kuwano, Yoshiyuki Nagatomo, K. Kobayashi and Kensuke Oki
    Topical Workshop on III-V Nitrides (Nagoya, Japan) September, 1995
  • The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
    Wugen Pan, Hiroyiki Yaguchi, Kentaro Onabe, Ryoichi Ito, Noritaka Usami and Ryoichi Ito
    1995 International Conference on Solid State Devices and Materials (PD-3-6) (Osaka, Japan) August, 1995
  • Time-Resolved Photoluminescence Study of Radiative Transition Processes in GaP1-xNx Alloys
    Hiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Yasuhiro Shiraki, Ryoihci Ito
    22nd International Symposium on Compound Semiconductors (WeA1-2) (Cheju Island, Korea) August 30, 1995
  • Strain Effect on Direct and Indirect-Gap Band Lineups of GaAsP/GaP Quantum Wells
    Akio Shima, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoihci Ito
    22nd International Symposium on Compound Semiconductors (FrA1-2) (Cheju Island, Korea) September 2, 1995
  • Polarization Properties of GaAsP/AlGaAs Tensilely Strained Quantum Wire Structures on V-Grooved GaAs Substrates
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Noritaka Usami and Yasuhiro Shiraki
    22nd International Symposium on Compound Semiconductors (WeA3-4) (Cheju Island, Korea) August 30, 1995
  • (In Japanese) Time-resolved photoluminescence study of GaP1-xNx alloys
    Hiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Yasuhiro Shiraki, Ryoich Ito
    The 56th Autumn Meeting, 1995; The Japan Society of Applied Physics (28p-ZE-8) (Kanazawa, Japan) August 28, 1995
  • (In Japanese) Phosphorus composition dependence of direct- and indirect-gap band lineups of strained GaAs1-xPx/GaP quantum wells P組成依存性
    Akio Shima, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 56th Autumn Meeting, 1995; The Japan Society of Applied Physics (26p-ZM-4) (Kanazawa, Japan) August 26, 1995
  • (In Japanese) Aluminum composition dependence of the band lineup of AlGaAs/GaAsP heterostructures
    Keizo Takemasa, Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 56th Autumn Meeting, 1995; The Japan Society of Applied Physics (26p-ZM-3) (Kanazawa, Japan) August 26, 1995
  • (In Japanese) MOVPE growth of cubic GaN on 3C-SiC(001) substrates
    Shigeki Hashimoto, Hiroyuki Yaguchi, Suguru Akiyama, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 56th Autumn Meeting, 1995; The Japan Society of Applied Physics (27p-ZE-12) (Kanazawa, Japan) August 27, 1995
  • (In Japanese) MOVPE growth of AlGaAs spontaneous vertial quantum wells on V-grooved substrates
    Wugen Pan, Mitsuteru Ishikawa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 56th Autumn Meeting, 1995; The Japan Society of Applied Physics (26p-ZE-1) (Kanazawa, Japan) August 26, 1995
  • (In Japanese) Rectangular AlGaAs/AlAs quantum wires by using spontaneous vertical quantum wells
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 56th Autumn Meeting, 1995; The Japan Society of Applied Physics (26p-ZM-6) (Kanazawa, Japan) August 26, 1995
  • Time-resolved photoluminescence study of GaP1-xNx alloys
    Hiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    14th Electronic Materials Symposium (B17) (Izu-Nagaoka, Japan) July 5, 1995
  • Strain effect on direct- and indirect-gap band lineups of GaAs1-xPx/GaP quantum wells
    Akio Shima, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    14th Electronic Materials Symposium (D2) (Izu-Nagaoka, Japan) July 6, 1995
  • Aluminum Composition Dependence of the Band Lineup of AlGaAs/GaAsP Heterostructures
    Keizo Takemasa, Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    14th Electronic Materials Symposium (D6) (Izu-Nagaoka, Japan) July 6, 1995
  • Metalorganic vapor phase epitaxial growth and polarization properties of tensile-strained GaAsP/AlGaAs quantum wires
    Wugen Pan, Mitsuteru Ishikawa, Takashi Hasegawa, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    14th Electronic Materials Symposium (F13) (Izu-Nagaoka, Japan) July 6, 1995
  • The in situ growth of lateral confinement enhanced rectangular AlGaAs/AlAs quantum wires by utilizing the spontaneous vertical quantum wells
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Noritaka Usami and Yasuhiro Shiraki
    14th Electronic Materials Symposium (S7) (Izu-Nagaoka, Japan) July 7, 1995
  • (In Japanese) Reflectance study of ZnCdSe/ZnSe single quantum wells
    Baoping Zhang, Takashi Yasuda, Takanari Yasui, Hiroyuki Yaguchi, Yusaburo Segawa, Yasuhiro Shiraki
    The 42nd Spring Meeting, 1995; The Japan Society of Applied Physics and Related Societies (28a-ZM-10) (Isehara, Japan) March 28, 1995
  • (In Japanese) Tight-binding calculations of the electronic structure of GaP1-xNx (x=0.25, 0.5, 0.75)
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 42nd Spring Meeting, 1995; The Japan Society of Applied Physics and Related Societies (30p-ZH-16) (Isehara, Japan) March 30, 1995