Publication 2007
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(In Japanese) 閃亜鉛鉱構造窒化物半導体のエピタキシャル成長
Hiroyuki Yaguchi
日本結晶成長学会誌 Vol. 34, No. 4, pp. 201-206 (2007).
LINK
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Growth Rate Enhancement of (000-1)-Face Silicon-Carbide Oxidation in Thin Oxide Regime
Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
Japanese Journal of Applied Physics Vol. 46, No. 32, pp. L770-L772 (2007).
DOI: 10.1143/JJAP.46.L770
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Modulation spectroscopic investigation on lattice polarity of gallium nitride
Ryuji Katayama, Kentaro Onabe, Hiroyuki Yaguchi, Tomonori Matsushita, and Takashi Kondo
Applied Physics Letters Vol. 91, No.6, pp. 061917-1-3 (2007).
DOI: 10.1063/1.2764115
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Photoluminescence study of isoelectronic traps
in dilute GaAsN alloys
Hiroyuki Yaguchi, Takashi Aoki, Toshikazu Morioke, Yasuto Hijikata, Sadafumi Yoshida,
Masahiro Yoshita, Hidefumi Akiyama,
Daiichiro Aoki, and Kentaro Onabe
Physica Status Solidi C Vol. 4, No. 7, pp. 2760-2763 (2007).
DOI: 10.1002/pssc.200674721
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Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by RF-MBE
Teruyuki Nakamura, Yuta Endo, Ryuji Katayama, Hiroyuki Yaguchi, and Kentaro Onabe
Physica Status Solidi C Vol. 4, No. 7, pp. 2437-2440 (2007).
DOI: 10.1002/pssc.200674803
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Simultaneous Determination of the Carrier Concentration, Mobility and
Thickness of SiC Homo-Epilayers Using Terahertz
Reflectance Spectroscopy
Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Materials Science Forum Vols. 556-557, pp. 423-426 (2007).
DOI: 10.4028/www.scientific.net/MSF.556-557.423
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RF-MBE growth of InN/InGaN quantum well
structures on 3C-SiC substrates
Shigeru Hirano, Takeru Inoue, Go Shikata, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Journal of Crystal Growth Vol. 301-302, pp.513-516 (2007).
DOI: 10.1016/j.jcrysgro.2006.11.117
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RF-MBE growth of a-plane InN on r-plane sapphire with a GaN
underlayer
Go Shikata, Shigeru Hirano, Takeru Inoue, Misao Orihara Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Journal of Crystal Growth Vol. 301-302, pp. 517-520 (2007).
DOI: 10.1016/j.jcrysgro.2006.11.072
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Micro-photoluminescence study of nitrogen delta-doped GaAs grown
by metalorganic vapor phase epitaxy
Yuta Endo, Kentaro Tanioka, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama,
Wataru Ono, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe
Journal of Crystal Growth Vol. 298, pp. 73-75 (2007).
DOI: 10.1016/j.jcrysgro.2006.10.019
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Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys
Kentaro Tanioka, Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida,
Masahiro Yoshita, Hidefumi Akiyama, Kentaro Onabe
Journal of Crystal Growth Vol. 298, pp. 131-134 (2007).
DOI: 10.1016/j.jcrysgro.2006.10.006