Yaguchi

Publication 2007


  • (In Japanese) 閃亜鉛鉱構造窒化物半導体のエピタキシャル成長
    矢口裕之
    日本結晶成長学会誌 Vol. 34, No. 4, pp. 201-206 (2007).
    LINK
  • Growth Rate Enhancement of (000-1)-Face Silicon-Carbide Oxidation in Thin Oxide Regime
    T. Yamamoto, Y. Hijikata, H. Yaguchi, and S. Yoshida
    Japanese Journal of Applied Physics Vol. 46, No. 32, pp. L770-L772 (2007).
    DOI: 10.1143/JJAP.46.L770
  • Modulation spectroscopic investigation on lattice polarity of gallium nitride
    R. Katayama, K. Onabe, H. Yaguchi, T. Matsushita, and T. Kondo
    Applied Physics Letters Vol. 91, No.6, pp. 061917-1-3 (2007).
    DOI: 10.1063/1.2764115
  • Photoluminescence study of isoelectronic traps in dilute GaAsN alloys
    H. Yaguchi, T. Aoki, T. Morioke, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, D. Aoki, and K. Onabe
    Physica Status Solidi C Vol. 4, No. 7, pp. 2760-2763 (2007).
    DOI: 10.1002/pssc.200674721
  • Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by RF-MBE
    T. Nakamura, Y. Endo, R, Katayama, H. Yaguchi, and K. Onabe
    Physica Status Solidi C Vol. 4, No. 7, pp. 2437-2440 (2007).
    DOI: 10.1002/pssc.200674803
  • Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
    S. Oishi, Y. Hijikata, H. Yaguchi, S. Yoshida
    Materials Science Forum Vols. 556-557, pp. 423-426 (2007).
    DOI: 10.4028/www.scientific.net/MSF.556-557.423
  • RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates
    S. Hirano, T. Inoue, G. Shikata, M. Orihara, Y. Hijikata, H. Yaguchi, S. Yoshida
    Journal of Crystal Growth Vol. 301-302, pp.513-516 (2007).
    DOI: 10.1016/j.jcrysgro.2006.11.117
  • RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
    G. Shikata, S. Hirano, T. Inoue, M. Orihara Y. Hijikata, H. Yaguchi, S. Yoshida
    Journal of Crystal Growth Vol. 301-302, pp. 517-520 (2007).
    DOI: 10.1016/j.jcrysgro.2006.11.072
  • Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
    Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    Journal of Crystal Growth Vol. 298, pp. 73-75 (2007).
    DOI: 10.1016/j.jcrysgro.2006.10.019
  • Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys
    K. Tanioka, Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, K. Onabe
    Journal of Crystal Growth Vol. 298, pp. 131-134 (2007).
    DOI: 10.1016/j.jcrysgro.2006.10.006