Yaguchi

Publication 2007


  • (In Japanese) 閃亜鉛鉱構造窒化物半導体のエピタキシャル成長
    Hiroyuki Yaguchi
    Journal of the Japanese Association for Crystal Growth Vol. 34, No. 4, pp. 201-206 (2007).
    DOI: 10.19009/jjacg.34.4_201
  • Growth Rate Enhancement of (000-1)-Face Silicon-Carbide Oxidation in Thin Oxide Regime
    Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    Japanese Journal of Applied Physics Vol. 46, No. 32, pp. L770-L772 (2007).
    DOI: 10.1143/JJAP.46.L770
  • Modulation spectroscopic investigation on lattice polarity of gallium nitride
    Ryuji Katayama, Kentaro Onabe, Hiroyuki Yaguchi, Tomonori Matsushita, and Takashi Kondo
    Applied Physics Letters Vol. 91, No.6, pp. 061917-1-3 (2007).
    DOI: 10.1063/1.2764115
  • Photoluminescence study of isoelectronic traps in dilute GaAsN alloys
    Hiroyuki Yaguchi, Takashi Aoki, Toshikazu Morioke, Yasuto Hijikata, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Daiichiro Aoki, and Kentaro Onabe
    Physica Status Solidi C Vol. 4, No. 7, pp. 2760-2763 (2007).
    DOI: 10.1002/pssc.200674721
  • Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by RF-MBE
    Teruyuki Nakamura, Yuta Endo, Ryuji Katayama, Hiroyuki Yaguchi, and Kentaro Onabe
    Physica Status Solidi C Vol. 4, No. 7, pp. 2437-2440 (2007).
    DOI: 10.1002/pssc.200674803
  • Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
    Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    Materials Science Forum Vols. 556-557, pp. 423-426 (2007).
    DOI: 10.4028/www.scientific.net/MSF.556-557.423
  • RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates
    Shigeru Hirano, Takeru Inoue, Go Shikata, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    Journal of Crystal Growth Vol. 301-302, pp.513-516 (2007).
    DOI: 10.1016/j.jcrysgro.2006.11.117
  • RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
    Go Shikata, Shigeru Hirano, Takeru Inoue, Misao Orihara Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    Journal of Crystal Growth Vol. 301-302, pp. 517-520 (2007).
    DOI: 10.1016/j.jcrysgro.2006.11.072
  • Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
    Yuta Endo, Kentaro Tanioka, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Wataru Ono, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe
    Journal of Crystal Growth Vol. 298, pp. 73-75 (2007).
    DOI: 10.1016/j.jcrysgro.2006.10.019
  • Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys
    Kentaro Tanioka, Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Kentaro Onabe
    Journal of Crystal Growth Vol. 298, pp. 131-134 (2007).
    DOI: 10.1016/j.jcrysgro.2006.10.006