Yaguchi

Publication 1999


  • Quantum size effect of lead iodide nanoparticles formed by a Langmuir-Blodgett technique
    T. Yamaki, K. Asai, K. Ishigure, K. Ema and H. Yaguchi
    Molecular Crystals and Liquid Crystals Vol. 337, No. 1, pp. 225-228 (1999).
    DOI: 10.1080/10587259908023418
  • Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
    H. Yaguchi, J. Wu, H. Akiyama, M. Baba, K. Onabe and Y. Shiraki
    Physica Status Solidi B Vol. 216, No. 1, pp. 237-240 (1999).
    DOI: 10.1002/(SICI)1521-3951(199911)216:1<237::AID-PSSB237>3.0.CO;2-O
  • Optical characterization of cubic AlGaN epilayers by cathodoluminescence and spectroscopic ellipsometry
    H. Okumura, T. Koizumi, Y. Ishida, H. Yaguchi and S. Yoshida
    Physica Status Solidi B Vol. 216, No. 1, pp. 211-214 (1999).
    DOI: 10.1002/(SICI)1521-3951(199911)216:1<211::AID-PSSB211>3.0.CO;2-J
  • Substrate Misorientation Dependence of the Hexagonal Phase Inclusion in Cubic GaN Films Grown by Metalorganic Vapor Phase Epitaxy
    A. Nagayama, R. Katayama, N. Nakadan, K. Miwa, H. Yaguchi, J. Wu, K. Onabe and Y. Shiraki
    Physica Status Solidi A Vol. 176, No. 1, pp. 513-517 (1999).
    DOI: 10.1002/(SICI)1521-396X(199911)176:1<513::AID-PSSA513>3.0.CO;2-Y
  • MOVPE Growth and Luminescence Properties of GaAsN Alloys with Higher Nitrogen Concentrations
    K. Onabe, D. Aoki, J. Wu, H. Yaguchi and Y. Shiraki
    Physica Status Solidi A Vol. 176, No. 1, pp. 231-235 (1999).
    DOI: 10.1002/(SICI)1521-396X(199911)176:1<231::AID-PSSA231>3.0.CO;2-9
  • Selective Growth of Cubic GaN on Patterned GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
    J. Wu, M. Kudo, A. Nagayama, H. Yaguchi, K. Onabe and Y. Shiraki
    Physica Status Solidi A Vol. 176, No. 1, pp. 557-560 (1999).
    DOI: 10.1002/(SICI)1521-396X(199911)176:1<557::AID-PSSA557>3.0.CO;2-2
  • Photoluminescence study of InP/GaP highly strained quantum wells
    T. Kimura, S. Yoshida, J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    Institute of Physics Conference Series Vol. 162, pp. 511-516 (1999).
  • Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
    T. Kimura, H. Yaguchi, N. Usami, K. Onabe and Y. Shiraki
    Extended Abstracts of the 1999 Institute Conference on Solid State Devices and Materilas, pp. 54-55 (1999).
    DOI: 10.7567/SSDM.1999.C-1-5
  • Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures
    J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    Journal of Crystal Growth Vol. 197, No. 1-2, pp. 73-77 (1999).
    DOI: 10.1016/S0022-0248(98)00945-2
  • High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
    T. Tsujikawa, T. Irisawa, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Japanese Journal of Applied Physics Vol. 38, No. 1B, pp. 459-464 (1999).
    DOI: 10.1143/JJAP.38.459