Yaguchi

Presentation 2012


  • (In Japanese) 堆積と熱酸化による4H-SiC MOS 構造の作製
    Atsushi Otani, Shuhei Yagi, Yasuto Hijikata, Hiroyki Yaguchi
    第21回SiC及び関連ワイドギャップ半導体研究会 (P-48) (Osaka, Japan)
    November 19, 2012
  • Enhancement of High Energy Band Optical Transition in GaAs:N Delta-Doped Superlattices for Intermediate Band Solar Cells
    Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe and Hiroyuki Yaguchi
    International Union of Materials Research Societies - International Conference on Electronic Materials 2012 (A-1-P26-014) (Yokohama, Japan)
    September 26, 2012
  • Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
    Ri Guo Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama and Hiroyuki Yaguchi
    17th International Conference on Molecular Beam Epitaxy (MoP-21) (Nara, Japan)
    September 24, 2012
  • RF-MBE growth of cubic InN quantum dots on cubic GaN
    Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata and Hiroyuki Yaguchi
    17th International Conference on Molecular Beam Epitaxy (MoP-24) (Nara, Japan)
    September 24, 2012
  • (In Japanese) Molecular Beam Epitaxy of ErGaAs Alloys on GaAs(001) Substrates
    Ri Guo Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    The 73rd JSAP Autumn Meeting 2012 (12p-PB11-16) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) Photoluminescence excitation study of emission from individual isoelectronic traps in N δ-doped GaAs
    Kengo Takamiya, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    The 73rd JSAP Autumn Meeting 2012 (12p-PB11-20) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) Influence of high-temperature InN buffer layer on the growth of InN
    Atsushi Masuda, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73rd JSAP Autumn Meeting 2012 (12a-PB4 -11) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) Influence of the nitridation on the growth of semi-polar InN layers on GaAs(110) by RF-MBE
    Takeshi Ikarashi, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73rd JSAP Autumn Meeting 2012 (12a-PB4-12) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) First Principles Study on the Effect of the Atomic Position on the Electronic Structure of GaAsN
    Kei Sakamoto, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73rd JSAP Autumn Meeting 2012 (12a-PB4-22) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) RF-MBE growth of c-GaN on TiO2(001) substrates
    Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73rd JSAP Autumn Meeting 2012 (13p-H9-17) (Matsuyama, Japan)
    September 13, 2012
  • (In Japanese) Fabrication of 4H-SiC MOS structures by deposition and thermal oxidation
    Atsushi Otani, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73rd JSAP Autumn Meeting 2012 (11p-PB2-4) (Matsuyama, Japan)
    September 11, 2012
  • (In Japanese) Generation of nonradiative recombination centers in 4H-SiC substrates
    T. Kato, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73rd JSAP Autumn Meeting 2012 (11p-PB2-12) (Matsuyama, Japan)
    September 11, 2012
  • (In Japanese) Development of high performance cell using inverted organic photovoltaics
    Hiroyuki Ogo, Hironori Kawatsu, Tetsuya Kaneko, Takuya Matsui, Atsushi Masuda, Hiroyuki Yaguchi, Yuji Yoshida
    The 73rd JSAP Autumn Meeting 2012 (11p-PB1-7) (Matsuyama, Japan)
    September 11, 2012
  • Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model
    Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, Sadafumi Yoshida
    European Conference on Silicon Carbide and Related Materials (TuP-63) (Saint-Petersburg, Russia)
    September 4, 2012
  • Investigation of organic-inorganic hybrid solar cell using inverted-type organic photovoltaics
    Hiroyuki Ogo, Hironori Kawatsu, Tetsuya Kaneko, Takuya Matsui, Atsushi Masuda, Hiroyuki Yaguchi, and Yuji Yoshida
    KJF International Conference on Organic Materials for Electronics and Photonics 2012 (PB14) (Sendai, Japan)
    August 31, 2012
  • Characterization of Structural Defects in InN Film on 4H-SiC (0001) Grown by RF-MBE
    Papaporn Jantawongrit, Sakuntum Sanorpim, Hiroyuki Yaguchi, Misao Orihara, and Pichet Limsuwan
    International Union of Materials Research Society - International Conference in Asia 2012 (WeM2-2) (Busan, Korea)
    Augsut 29, 2012
  • Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs
    Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, and Hiroyuki Yaguchi
    31st International Conference on the Physics of Semiconductors (69.7) (Zurich, Switzerland)
    August 2, 2012
  • First Principles Study on the Effect of the Position of Nitrogen Atoms on the Electronic Structure of GaAsN
    Kei Sakamoto and Hiroyuki Yaguchi
    31st International Conference on the Physics of Semiconductors (30.17) (Zurich, Switzerland)
    July 31, 2012
  • Analysis of the Energy Structure of Nitrogen Delta-Doped GaAs Superlattices for High-Efficiency Intermediate-Band Solar Cells
    Shunsuke Noguchi, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, and Hiroyuki Yaguchi
    38th IEEE Photovoltaic Specialists Conference (Austin, USA)
    June 4, 2012
  • (In Japanese) RF-MBE法によるInN量子ドットの結晶構造制御
    Hidetoshi Tokuda, Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    第4回窒化物半導体結晶成長講演会 (FR-26) (Tokyo, Japan)
    April 27, 2012
  • (In Japanese) Biexciton emission from individual isoelectronic traps in N δ-doped GaAs
    Kengo Takamiya, Toshiyuki Fukushima, Shinya Hoshino, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuhi Katayama, Kentaro Onabe, Hiroyuki Yaguchi
    The 59th JSAP Spring Meeting 2012 (17a-A8-9) (Tokyo, Japan)
    March 17, 2012
  • (In Japanese) Energy structure of nitrogen δ-doped GaAs superlattices
    Shunsuke Noguchi, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Hirouki Yaguchi
    The 59th JSAP Spring Meeting 2012 (17p-DP3-12) (Tokyo, Japan)
    March 17, 2012
  • (In Japanese) Effects of uniaxial stress on the luminescence from single isoelectronic traps in N δ-doped GaAs
    Yuya Arai, Shinya Hoshino, Kengo Takamiya, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Hiroyuki Yaguchi
    The 59th JSAP Spring Meeting 2012 (17p-DP3-13) (Tokyo, Japan)
    March 17, 2012
  • (In Japanese) Optical characterization of cubic InN by spectroscopic ellipsometry
    Michihiro Yoshida, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yagi
    The 59th JSAP Spring Meeting 2012 (16a-DP1-27) (Tokyo, Japan)
    March 16, 2012
  • (In Japanese) Micro-photoluminescence study on the influene of oxidation on stacking faults in 4H-SiC epilayers
    Hikaru Yamagata, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 59th JSAP Spring Meeting 2012 (17p-A8-11) (Tokyo, Japan)
    March 17, 2012