Yaguchi

Presentation 2012


  • (In Japanese) 堆積と熱酸化による4H-SiC MOS 構造の作製
    Atsushi Otani, Shuhei Yagi, Yasuto Hijikata, Hiroyki Yaguchi
    第21回SiC及び関連ワイドギャップ半導体研究会 (P-48) (Osaka, Japan)
    November 19, 2012
  • Enhancement of High Energy Band Optical Transition in GaAs:N Delta-Doped Superlattices for Intermediate Band Solar Cells
    Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe and Hiroyuki Yaguchi
    International Union of Materials Research Societies - International Conference on Electronic Materials 2012 (A-1-P26-014) (Yokohama, Japan)
    September 26, 2012
  • Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
    R. G. Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama and Hiroyuki Yaguchi
    17th International Conference on Molecular Beam Epitaxy (MoP-21) (Nara, Japan)
    September 24, 2012
  • RF-MBE growth of cubic InN quantum dots on cubic GaN
    Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata and Hiroyuki Yaguchi
    17th International Conference on Molecular Beam Epitaxy (MoP-24) (Nara, Japan)
    September 24, 2012
  • (In Japanese) MBE法によるGaAs(001)基板上へのErGaAs混晶の成長
    R. G. Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    The 73th JSAP Spring Meeting 2012 (12p-PB11-16) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセ ンス励起分光測定
    Kengo Takamiya, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    The 73th JSAP Spring Meeting 2012 (12p-PB11-20) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) InN成長におけるInN高温バッファ層の効果に関する検討
    Atsushi Masuda, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73th JSAP Spring Meeting 2012 (12a-PB4 -11) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) RF-MBE法によるGaAs(110)基板上への半極性InN成長に対する窒化の影響
    Takeshi Ikarashi, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73th JSAP Spring Meeting 2012 (12a-PB4-12) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) 第一原理計算によるGaAsNの電子構造に対する原子配置の影響に関する研究
    Kei Sakamoto, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73th JSAP Spring Meeting 2012 (12a-PB4-22) (Matsuyama, Japan)
    September 12, 2012
  • (In Japanese) RF-MBE 法によるTiO2(001)基板上への立方晶GaNの成長
    Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73th JSAP Spring Meeting 2012 (13p-H9-17) (Matsuyama, Japan)
    September 13, 2012
  • (In Japanese) 堆積と熱酸化による4H-SiC MOS 構造の作製
    Atsushi Otani, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73th JSAP Spring Meeting 2012 (11p-PB2-4) (Matsuyama, Japan)
    September 11, 2012
  • (In Japanese) スパッタ薄膜成長による4H-SiC 基板中の非発光再結合中心生成
    加藤寿悠, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    The 73th JSAP Spring Meeting 2012 (11p-PB2-12) (Matsuyama, Japan)
    September 11, 2012
  • (In Japanese) 逆構造型有機薄膜太陽電池による高性能化への検討
    Hiroyuki Ogo, Hironori Kawatsu, Tetsuya Kaneko, Takuya Matsui, Atsushi Masuda, Hiroyuki Yaguchi, Yuji Yoshida
    The 73th JSAP Spring Meeting 2012 (11p-PB1-7) (Matsuyama, Japan)
    September 11, 2012
  • Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model
    Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, Sadafumi Yoshida
    European Conference on Silicon Carbide and Related Materials (TuP-63) (Saint-Petersburg, Russia)
    September 4, 2012
  • Investigation of organic-inorganic hybrid solar cell using inverted-type organic photovoltaics
    Hiroyuki Ogo, Hironori Kawatsu, Tetsuya Kaneko, Takuya Matsui, Atsushi Masuda, Hiroyuki Yaguchi, and Yuji Yoshida
    KJF International Conference on Organic Materials for Electronics and Photonics 2012 (PB14) (Sendai, Japan)
    August 31, 2012
  • Characterization of Structural Defects in InN Film on 4H-SiC (0001) Grown by RF-MBE
    P. Jantawongrit, S. Sanorpim, Hiroyuki Yaguchi, Misao Orihara, and P. Limsuwan
    International Union of Materials Research Society - International Conference in Asia 2012 (WeM2-2) (Busan, Korea)
    Augsut 29, 2012
  • Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs
    Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, and Hiroyuki Yaguchi
    31st International Conference on the Physics of Semiconductors (69.7) (Zurich, Switzerland)
    August 2, 2012
  • First Principles Study on the Effect of the Position of Nitrogen Atoms on the Electronic Structure of GaAsN
    Kei Sakamoto and Hiroyuki Yaguchi
    31st International Conference on the Physics of Semiconductors (30.17) (Zurich, Switzerland)
    July 31, 2012
  • Analysis of the Energy Structure of Nitrogen Delta-Doped GaAs Superlattices for High-Efficiency Intermediate-Band Solar Cells
    Shunsuke Noguchi, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, and Hiroyuki Yaguchi
    38th IEEE Photovoltaic Specialists Conference (Austin, USA)
    June 4, 2012
  • (In Japanese) RF-MBE法によるInN量子ドットの結晶構造制御
    Hidetoshi Tokuda, Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    第4回窒化物半導体結晶成長講演会 (FR-26) (Tokyo, Japan)
    April 27, 2012
  • (In Japanese) 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光
    Kengo Takamiya, Toshiyuki Fukushima, Shinya Hoshino, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuhi Katayama, Kentaro Onabe, Hiroyuki Yaguchi
    The 59th JSAP Spring Meeting 2012 (17a-A8-9) (Tokyo, Japan)
    March 17, 2012
  • (In Japanese) GaAs中窒素δドープ超格子のエネルギー構造評価
    野口 駿介, 八木 修平, 土方 泰斗, 窪谷 茂幸, 尾鍋 研太郎, 矢口 裕之
    The 59th JSAP Spring Meeting 2012 (17p-DP3-12) (Tokyo, Japan)
    March 17, 2012
  • (In Japanese) 窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響
    新井 佑也, 星野 真也, 高宮 健吾, 八木 修平, 土方 泰斗, 望月 敏光, 吉田 正裕, 秋山 英文, 窪谷 茂幸, 尾鍋 研太郎, 矢口 裕之
    The 59th JSAP Spring Meeting 2012 (17p-DP3-13) (Tokyo, Japan)
    March 17, 2012
  • (In Japanese) 分光エリプソメトリによる立方晶InNの光学的特性評価
    吉田 倫大, 折原　操, 八木 修平, 土方 泰斗, 矢口 裕之
    The 59th JSAP Spring Meeting 2012 (16a-DP1-27) (Tokyo, Japan)
    March 16, 2012
  • (In Japanese) 熱酸化が4H-SiCエピ膜中積層欠陥に及ぼす影響の顕微フォトルミネッセンスによる観察
    山形 光, 八木 修平, 土方 泰斗, 矢口 裕之
    The 59th JSAP Spring Meeting 2012 (17p-A8-11) (Tokyo, Japan)
    March 17, 2012