Presentation 2010

• (In Japanese) In-situ 分光エリプソメ−タによるSiC 酸化過程の酸素分圧依存性測定
  Oxygen Partial Pressure Dependence of SiC Oxidation Process Observed by In-situ Spectroscopic Ellipsometry
  Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  SiC 及び関連ワイドギャップ半導体研究会 第19回講演会 (P-47) (Tsukuba, Japan)
  October 21, 2010
• (In Japanese) Photoreflectance spectra of dilute GaAsN alloys
  Wataru Okuba, Akira Ishikawa, Shuhei Yagi, Yasuto Hijikata, Sadafumi Yoshida, Ryuji Katayama, Kentaro Onabe, Hiroyuki Yaguchi
  The 71st JSAP Autumn Meeting 2010 (14p-ZV-1) (Nagasaki, Japan)
  September 14, 2010
• (In Japanese) Effects of uniaxial stress on the luminescence from isoelectronic traps in dilute GaAsN alloys
  Yuya Arai, Yuta Endo, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuobya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
  The 71st JSAP Autumn Meeting 2010 (14p-ZV-2) (Nagasaki, Japana)
  September 14, 2010
• (In Japanese) Nitrogen concentration dependence of the emission form nitrogen pairs in dilute GaAsN alloys
  Akira Ishikawa, Shuhei Yagi, Yasuto Hijikata, Sadafumi Yoshida, Makoto Okano, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
  The 71st JSAP Autumn Meeting 2010 (14p-ZV-3) (Nagasaki, Japan)
  September 14, 2010
• (In Japanese) Arrangements of nitrogen atom pairs forming isoelectronic traps in N δ-doped GaAs
  Shinya Hoshino, Yuta Endo, Toshiyuki Fukushima, Kengo Takamiya, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
  The 71st JSAP Autumn Meeting 2010 (14p-ZV-5) (Nagasaki, Japan)
  September 14, 2010
• (In Japanese) Photoluminescence from isoelectronic traps in N δ-doped GaAs/AlGaAs heterostructures
  Kengo Takamiya, Yuta Endo, Toshiyuki Fukushima, Shinya Hoshino, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuobya, Kentaro Onabe, Ryuji Katayama, Sakuntam Sanorpim, Hiroyuki Yaguchi
  The 71st JSAP Autumn Meeting 2010 (14p-ZV-6) (Nagasaki, Japan)
  September 14, 2010
• (In Japanese) A Theoretical Study on Si anc C Emission into SiC Layer during Oxidation
  Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 71st JSAP Autumn Meeting 2010 (15a-ZS-10) (Nagasaki, Japan)
  September 15, 2010
• Theoretical studies for Si and C emission into SiC layer during oxidation
  Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  8th European Conference on Silicon Carbide and Related Materials (Mo3-6) (Oslo, Norway)
  August 30, 2010
• High cubic-phase purity InN on MgO (001) using cubic-phase GaN as buffer layer
  Sakuntam Sanorpim, Saman Kuntharin, Hiroyuki Yaguchi, Yohei Iwahashi, Misao Orihara, Yasuto Hijakata, Sadafumi Yoshida
  30th International Conference on the Physics of Semiconductors (ThE3-5) (Seoul, Korea)
  July 29, 2010
• (In Japanese) Photoluminescence from isoelectronic traps in N δ-doped GaAs grown on variously oriented GaAs surfaces (III)
  Toshiyuki Fukushima, Kengo Takamiya, Yasuto Hijikata, Hiroyuki Yaguchi, Safafumi Yoshida, Makoto Okano, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama
  The 57th JSAP Spring Meeting 2010 (18p-TW-7) (Hiratsuka, Japan)
  March 18, 2010