Presentation 2005

• (In Japanese) 赤外反射分光法を用いたSiC エピ膜の電気的特性の評価
  Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  SiC 及び関連ワイドギャップ半導体研究会 第14回講演会 (P-21) (Kyoto, Japan)
  November, 2005
• (In Japanese) 分光エリプソメータによるSiO₂/SiC 界面の光学的評価 −紫外領域への拡張—
  Ryoichi Kuboki, Koichi Kakubari, Hideki Hashimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  SiC 及び関連ワイドギャップ半導体研究会 第14回講演会 (P-24) (Kyoto, Japan)
  November, 2005
• (In Japanese) In-situ エリプソメータによるSiC の酸化の実時間観察
  Koichi Kakubari, Ryoichi Kuboki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  SiC 及び関連ワイドギャップ半導体研究会 第14回講演会 (P-25) (Kyoto, Japan)
  November, 2005
• Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
  Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasutaka Takata, Keisuke Kobayashi, Hiroshi Nohira, Takeo Hattori
  International Conference on Silicon Carbide and Related Materials 2005 (TPP1 (20)) Final Technical Progam p. 36 (Pittsburgh, USA)
  September 20, 2005
• Real Time Observation of SiC Oxidation Using In-Situ Spectroscopic Ellipsometer
  Koichi Kakubari, Ryoichi Kuboki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  International Conference on Silicon Carbide and Related Materials 2005 (RPM6 (46)) Final Technical Program p. 78 (Pittsburgh, USA)
  September 22, 2005
• (In Japanese) Raman Spectroscopy of Photo-Induced Structural Changes in GaAsN Alloys
  Hiroyuki Yaguchi, Hiroshi Shimizu, Toshikazu Morioke, Takashi Aoki, Yasuto Hijikata, Sadafumi Yoshida, Noritaka Usami, Masahiro Yoshita, Hidefumi Akiyama, Daiichiro Aoki, Kentaro Onabe
  The 66th Autumn Meeting 2005; The Japan Society of Applied Physics (9p-ZA-18) (Tokushima, Japan)
  September 9, 2005
• (In Japanese) RF-MBE growth of InN/InGaN quantum well structures on 4H-SiC substrates (II)
  Misao Orihara, Yohei Iwahashi, Shigeru Hirano, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 66th Autumn Meeting 2005; The Japan Society of Applied Physics (10a-R-7) (Tokushima, Japan)
  September 10, 2005
• (In Japanese) RF-MBE growth of InN/InGaN quantum well structures on intermediate-composition InGaN layers
  Shigeru Hirano, Yohei Iwahashi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 66th Autumn Meeting 2005; The Japan Society of Applied Physics (10a-R-8) (Tokushima, Japan)
  September 10, 2005
• (In Japanese) Characterization of electrical properties of SiC epi-layer using infrared reflectance spectroscopy
  Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 66th Autumn Meeting 2005; The Japan Society of Applied Physics (8a-ZB-6) (Tokushima, Japan)
  September 9, 2005
• (In Japanese) Characterization of oxide films on low off-angle C-face SiC substrates
  Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasuaka Takada, Keisuke Kobayashi, Hiroshi Nohira, Takeo Hattori
  The 66th Autumn Meeting 2005; The Japan Society of Applied Physics (8p-ZB-17) (Tokushima, Japan)
  September 8, 2005
• (In Japanese) Characterization of SiO₂/SiC interfaces by spectroscopic ellipsometer -Extension to UV region-
  Ryoichi Kuboki, Koichi Kakubari, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 66th Autumn Meeting 2005; The Japan Society of Applied Physics (8p-ZB-18) (Tokushima, Japan)
  September 8, 2005
• Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys
  Hiroyuki Yaguchi, Toshikazu Morioke, Takashi Aoki, Hiroshi Shimizu, Yasuto Hijikata, Sadafumo Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Noritaka Usami, Daiichiro Aoki, and Kentaro Onabe
  6th International Conference on Nitride Semiconductors (Mo-P-097) (Bremen, Germany)
  August 29, 2005
• RF-MBE growth of cubic InN films on MgO (001) substrates
  Yohei Iwahashi, Akemi Nishimoto, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  6th International Conference on Nitride Semiconductors (Tu-P-075) (Bremen, Germany)
  August 30, 2005
• (In Japanese) Real time observatin of SiC oxidation using in situ ellipsometer
  Koichi Kakubari, Ryoichi Kuboki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 52nd Spring Meeting 2005; The Japan Society of Applied Physics and Related Societies (1a-YK-1) (Saitama, Japan)
  April 1, 2005
• (In Japanese) Characterization of oxide films on SiC substrates having various off orientations
  Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasutaka Takada, Keisuke Kobayashi, Hiroshi Nohira, Takeo Hattori
  The 52nd Spring Meeting 2005; The Japan Society of Applied Physics and Related Societies (1a-YK-4) (Saitama, Japan)
  April 1, 2005
• (In Japanese) Characterization of electrical properties of SiC epi-layer using infrared reflectance spectroscopy
  Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 52nd Spring Meeting 2005; The Japan Society of Applied Physics and Related Societies (30p-YK-21) (Saitama, Japan)
  March 30, 2005
• (In Japanese) RF-MBE growth of InN/InGaN quantum well structures on 4H-SiC substrates
  Misao Orihara, Yoshihiro Kitamura, Yohei Iwahashi, Shigeru Hirano, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 52nd Spring Meeting 2005; The Japan Society of Applied Physics and Related Societies (29a-N-33) (Saitama, Japan)
  March 29, 2005
• (In Japanese) Micro-photoluminescence study of nitrogen δ-doped GaAs
  Kimitoshi Hanashima, Toshikazu Morioke, Takashi Aoki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Taku Hirayama, Ryuji Katayama, Kentaro Onabe
  The 52nd Spring Meeting 2005; The Japan Society of Applied Physics and Related Societies (30a-L-11) (Saitama, Japan)
  March 30, 2005