Presentation 1997

• MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP
  Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  Materials Research Society 1997 Fall Meeting (Boston, USA)
  December, 1997
• (In Japanese) Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
  Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  SiC及び関連ワイドギャップ半導体研究会第6回講演会 (P-45) (Tokyo, Japan)
  November 26, 1997
• (In Japanese) Micro-Raman spectroscopy of GaN grown on 3C-SiC substrates
  Hiroyuki Yaguchi, Jun Wu, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  SiC及び関連ワイドギャップ半導体研究会第6回講演会 (P-46) (Tokyo, Japan)
  November 26, 1997
• Metalorganic Vapor Phase Epitaxy of GaP_1-x-yAs_yN_x Alloys on GaP
  Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  The Second International Conference on Nitride Semiconductors (P1-42) (Tokushima, Japan)
  October 27, 1997
• Temperature Dependence of Photoluminescence of GaP_1-xN_x Alloys
  Hiroyuki Yaguchi, Goshi Biwa, Seiro Miyoshi, Daiichiro Aoki, Keisuke Arimoto, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
  The Second International Conference on Nitride Semiconductors (P1-44) (Tokushima, Japan)
  October 27, 1997
• Theoretical Study of Conduction Band Edge Formation in GaP_1-xN_x Alloys Using a Tight-Binding Approximation
  Hiroyuki Yaguchi
  The Second International Conference on Nitride Semiconductors (P1-45) (Tokushima, Japan)
  October 27, 1997
• Optical Transitions in Cubic GaN Grown on GaAs(100) Substrates by Metalorgnaic Vapor Phase Epitaxy
  Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
  The Second International Conference on Nitride Semiconductors (P1-47) (Tokushima, Japan)
  October 27, 1997
• Investigation of Luminescence Properties of GaN Single Crystals Grown on 3C-SiC Substrates
  Jun Wu, Hiroyuki Yaguchi, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
  The Second International Conference on Nitride Semiconductors (P1-48) (Tokushima, Japan)
  October 27, 1997
• Fabrication of Pb(Zr, Ti)O₃/MgO/GaN/GaAs Structure for Optoelectronic Device Applications
  Atushi Masuda, Shinya Morita, Hideki Shigeno, Akiharu Morimoto, Tatsuo Shimizu, Jun Wu, Hiroyuki Yaguchi and Kentaro Onabe
  The Second International Conference on Nitride Semiconductors (LN-14) (Tokushima, Japan)
  October 27, 1997
• High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
  Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
  1997 International Conference on Solid State Devices and Materials (SSDM'97) (C-5-4) (Hamamatsu, Japan)
  September 17, 1997
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral -Shaped Recesses on GaAs (111)B Substrates by MOVPE
  Tomoko Tsujikawa, Keishi Momma, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
  1997 International Conference on Solid State Devices and Materials (SSDM'97) (B-10-3) (Hamamatsu, Japan)
  September 18, 1997
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
  Mitsuteru Ishikawa, Wugen Pan, Yasuhisa Kaneko, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
  1997 International Conference on Solid State Devices and Materials (SSDM'97) (B-11-6) (Hamamatsu, Japan)
  September 18, 1997
• (In Japanese) Preparation of epitaxial MgO buffer layers and PZT films on cubic GaN
  Atsushi Masuda, Shinya Morita, Hideki Shigeno, Akiharu Morimoto, Tatsuo Shimizu, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe
  The 58th Autumn Meeting, 1997; The Japan Society of Applied Physics (2p-PA-18) (Akita, Japan)
  September 2, 1997
• (In Japanese) GaAs low-dimensional structures grown in tetrahedral-shaped recesses by MOVPE II. Temperature dependence of the migration of adatoms
  Tomoko Tsujikawa, Toshifumi Irisawa, Masahiro Kudo, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  The 58th Autumn Meeting, 1997; The Japan Society of Applied Physics (2p-ZN-7) (Akita, Japan)
  September 2, 1997
• (In Japanese) Characterization of GaP/AlP DBR mirrors on GaP(111) substrates grown by MOVPE
  Motoyuki Sato, Hiroyuki Yaguchi, Shigeru Nakagawa, Norihide Yamada, Kentaro Onabe, Yasuhiro Shiraki
  The 58th Autumn Meeting, 1997; The Japan Society of Applied Physics (3p-T-7) (Akita, Japan)
  September 3, 1997
• (In Japanese) MOVPE growth of GaP_1-x-yAs_yN_x quaternary alloys lattice-matched to GaP
  Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
  The 58th Autumn Meeting, 1997; The Japan Society of Applied Physics (3p-T-16) (Akita, Japan)
  September 3, 1997
• (In Japanese) Photoluminescence properties of cubic GaN grown by MOVPE on GaAs(001) substrates
  Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  The 58th Autumn Meeting, 1997; The Japan Society of Applied Physics (3p-Q-18) (Akita, Japan)
  September 3, 1997
• (In Japanese) Micro-Raman spectroscopy of GaN grown on 3C-SiC substrates
  Hiroyuki Yaguchi, Jun Wu, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Ryoichi Shiraki, Ryoichi Ito
  The 58th Autumn Meeting, 1997; The Japan Society of Applied Physics (3p-Q-19) (Akita, Japan)
  September 3, 1997
• Temperature Dependence of Photoluminescence Intensities in GaP_1-xN_x Alloys
  Goshi Biwa, Hiroyuki Yaguchi, Seiro Miyoshi, Daiichiro Aoki, Keisuke Arimoto, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
  16th Electronic Materials Symposium (Minoo, Japan)
  July, 1997
• Molecular Beam Epitaxy of SiGe Strained Heterostructures Using a Si Effusion Cell
  Hiroyuki Yaguchi, Takatoshi Yamamoto and Yasuhiro Shiraki
  16th Electronic Materials Symposium (Minoo, Japan)
  July, 1997
• Temperature and V/III Ratio Dependence of GaN Crystal Structure Grown on 3C-SiC Substrates
  Jun Wu, Hiroyuki Yaguchi, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
  16th Electronic Materials Symposium (Minoo, Japan)
  July, 1997
• GaAs Low-Dimensional Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
  Tomoko Tsujikawa, Keishi Momma, Masahiro Kudo, Kunio Tanaka, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
  16th Electronic Materials Symposium (Minoo, Japan)
  July, 1997
• Characterization of SiGe Strained Heterostructures Grown by Molecular Beam Epitaxy Using a Si Effusion Cell
  Hiroyuki Yaguchi, Takatoshi Yamamoto, Yasuhiro Shiraki
  The Seventh International Symposium on Silicon Molecular Beam Epitaxy (Banff, Canada)
  July 16, 1997
• Photoluminescence from Ge thin films on Si(110) grown by solid-source molecular beam epitaxy
  Noritaka Usami, Junichi Arai, A. Ohga, Hiroyuki Yaguchi, Takeo Hattori and Yasuhiro Shiraki
  The Seventh International Symposium on Silicon Molecular Beam Epitaxy (Banff, Canada)
  July 14, 1997
• (In Japanese) MOVPE Growth and Optical Characterization of GaPN Alloys
  Hiroyuki Yaguchi
  Technical Report of IEICE (LQE97-22) (Tokyo, Japan)
  June 17, 1997
• Molecular beam epitaxy of SiGe strained heterostructures using effusion cell
  Hiroyuki Yaguchi, Takatoshi Yamamoto and Yasuhiro Shiraki
  The Second International Conference on Low Dimensional Structures and Devices (Lisbon, Portugal)
  May 20, 1997
• A new approach to ZnCdSe quantum wires
  Baoping Zhang, Takashi Yasuda, Wenxin Wang, Yusaburo Segawa, Keiichi Edamatsu, Tadashi Itoh, Hiroyuki Yaguchi, Kentaro Onabe
  The Second International Conference on Low Dimensional Structures and Devices (Lisbon, Portugal)
  May 20, 1997
• Self-assembled very long II-VI semiconductor quantum wires
  Baoping Zhang, Takashi Yasuda, Wenxin Wang, Yusaburo Segawa, Hiroyuki Yaguchi, Kentaro Onabe
  The Second International Conference on Low Dimensional Structures and Devices (Lisbon, Portugal)
  May 21, 1997
• (In Japanese) MBE growth of SiGe heterostructures using a Si effusion cell
  Hiroyuki Yaguchi, Takatoshi Yamamoto, Yasuhiro Shiraki
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (28a-SS-19) (Funabashi, Japan)
  March 28, 1997
• (In Japanese) Theoretical Study of Band Edge Formation in GaP_1-xN_x Alloys Using Tight-Binding Approximation
  Hiroyuki Yaguchi
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (28a-M-10) (Funabashi, Japan)
  March 28, 1997
• (In Japanese) Reflected second-harmonic generation from GaAs thin films grown by polarization inversion epitaxy
  Shinji Koh, Hiroshi Matsuura, Takashi Kondo, Kaoru Morita, Ichiro Shoji, Hiroyuki Yaguchi, Noritaka Usami, Yasuhiro Shiraki, Ryoichi Ito
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (30p-NE-11) (Funabashi, Japan)
  March 30, 1997
• (In Japanese) GaAs low-dimensional structures grown in tetrahedral-shaped recesses by MOVPE
  Tomoko Tsujikawa, Keishi Momma, Masahiro Kudo, Kunio Tanaka, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (28p-T-5) (Funabashi, Japan)
  March 28, 1997
• (In Japanese) Relationship between growth mode and the luminescence property of GaN
  Suguru Akiyama, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (29a-K-10) (Funabashi, Japan)
  March 29, 1997
• (In Japanese) GaP homoepitaxial grown on GaP(111) substrates by MOVPE
  Motoyuki Sato, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (28a-M-3) (Funabashi, Japan)
  March 28, 1997
• (In Japanese) Temperature dependence of photoluminescence intensities in GaP_1-xN_x alloys
  Goshi Biwa, Hiroyuki Yaguchi, Seiro Miyoshi, Daiichiro Aoki, Keisuke Arimoto, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (28a-M-9) (Funabashi, Japan)
  March 28, 1997
• (In Japanese) The growth temperature dependence of cubic GaN grown by MOVPE on GaAs(001) substrates
  Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (29p-K-8) (Funabashi, Japan)
  March 29, 1997
• (In Japanese) MOVPE growth condition dependence of GaN crystal structure on 3C-SiC substrates
  Jun Wu, Hiroyuki Yaguchi, Suguru Akiyama, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito伊
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (29p-K-13) (Funabashi, Japan)
  March 29, 1997
• (In Japanese) Natural formation of ZnCdSe quantum dots on ZnSe(110) surfaces
  Baoping Zhang, Takashi Yasuda, Wenxin Wang, Yusaburo Segawa, Keiichi Edamatsu, Tadashi Itoh, Hiroyuki Yaguchi, Kentaro Onabe
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (28p-T-1) (Funabashi, Japan)
  March 28, 1997
• (In Japanese) Millimeters long self-organized Zn(Cd)Se quantum wires
  Baoping Zhang, Wenxin Wang, Takashi Yasuda, Yusaburo Segawa, Hiroyuki Yaguchi, Kentaro Onabe, Keiichi Edamatsu, Tadashi Itoh
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (29p-T-3) (Funabashi, Japan)
  March 29, 1997
• (In Japanese) Characterization of SiO₂/GaAs using spectroscopic ellipsometry and photoreflectance
  Maho Mochizuki, Yi-Ming Xiong, Tadashi Saitoh, Hiroyuki Yaguchi, Ken Kikawa
  The 44th Spring Meeting, 1997; The Japan Society of Applied Physics and Related Societies (29p-ZG-3) (Funabashi, Japan)
  March 29, 1997
• Self Formation and Photoluminescence of II-VI Quantum Wires on GaAs(110) Surfaces
  Baoping Zhang, Wenxin Wang, G. Isoya, Takashi Yasuda, Yusaburo Segawa, Hiroyuki Yaguchi, Kentaro Onabe, Keiichi Edamatsu and Tadashi Itoh
  International Symposium on Quantum Structures for Photonic Applications (Sendai, Japan)
  March, 1997