Yaguchi

Presentation 1994


  • MOVPE Growth Features of Cubic GaN on (100) GaAs Substrates
    Kentaro Onabe, Seiro Miyoshi, Masaki Nagahara, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
    2nd Workshop on Wide Bandgap Nitrides (St. Louis, USA) October, 1994
  • (In Japanese) 歪ヘテロ構造におけるバンド不連続
    Hiroyuki Yaguchi
    日本学術振興会薄膜第131委員会第173回研究会 (Kurobe, Japan) October 21, 1994
  • (In Japanese) PRおよびPLによるGaAsP/GaP歪量子井戸構造におけるバンドラインアップの決定
    Hiroyuki Yaguchi, Takashi Sugita, Shigeki Hashimoto, Yujiro Hara, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第55回講演会 (19aV7) (Nagoya, Japan) September 19, 1994
  • (In Japanese) GaP1-xNx混晶のバンドギャップ
    Hiroyuki Yaguchi, Hiroshi Inoue, Hokuto Takada, Seiro Miyoshi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第55回講演会 (19pMG13) (Nagoya, Japan) September 19, 1994
  • (In Japanese) GaP1-xNx混晶のフォノンエネルギーのN組成依存性
    Hiroyuki Yaguchi, Akio Shima, Fumio Isshiki, Seiro Miyoshi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第55回講演会 (19pMG14) (Nagoya, Japan) September 19, 1994
  • (In Japanese) (111)-GaAsP/AlGaAs歪み量子井戸構造の光物性
    Xiong Zhang, Koichi Karaki, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第55回講演会(19aV4) (Nagoya, Japan) September 19, 1994
  • (In Japanese) 成長中断によるMOVPE成長GaPN混晶組成の変化
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第55回講演会 (19pMG12) (Nagoya, Japan) September 19, 1994
  • (In Japanese) 引っ張り歪みGaAsP/AlGaAs量子細線のMOVPEによる作製
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第55回講演会 (20aT2) (Nagoya, Japan) September 20, 1994
  • Growth Parameters for Metastable GaP1-xNx Alloys in MOVPE
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    21st International Symposium on Compound Semiconductors (San Diego, USA) September, 1994
  • Photoreflectance and Photoluminescence Study of Direct- and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells
    Hiroyuki Yaguchi, Shigeki Hashimoto, Takashi Sugita, Yujiro Hara, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    1994 International Conference on Solid State Devices and Materials (Yokohama, Japan) Augusut, 1994
  • Luminescence Properties of GaAs/GaAsP Quantum Wires
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Kazumi Wada, Yasuhiro Shiraki and Ryoichi Ito
    13th Symposium on Alloy Semiconductor Physics and Electronics (B4) (Izu-Nagaoka, Japan) July 20, 1994
  • Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties
    Seiro Miyoshi, H Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    13th Symposium on Alloy Semiconductor Physics and Electronics (D8) (Izu-Nagaoka, Japan) July 21, 1994
  • Gamma- and X-point band lineups of GaAs1-xPx/GaP strained-layer quantum well structures
    Hiroyuki Yaguchi, Shigeki Hashimoto, Takashi Sugita, Yujiro Hara, Kentaro Onabe, Yasuhiro Shiraki and R. Ito
    13th Symposium on Alloy Semiconductor Physics and Electronics (E9) (Izu-Nagaoka, Japan) July 21, 1994
  • Effect of growth interruption on the interface flatness in metalorganic vapor phase epitaxy-grown GaAs/GaAsP heterostructures
    Kazunobu Ota, Hiroyuki Yaguchi. Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    13th Symposium on Alloy Semiconductor Physics and Electronics (F11) (Izu-Nagaoka, Japan) July 21, 1994
  • Intermediate Range Between N-Doped GaP and GaP1-xNx Alloys: Difference in Optical Properties
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    7th International Conference on Metalorganic Vapor Phase Epitaxy (B2-2) (Yokohama, Japan) May 31, 1994
  • MOVPE Growth and Luminescence Properties of GaAs/GaAsP Quantum Wires
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Kazumi Wada, Yasuhiro Shiraki and Ryoichi Ito
    7th International Conference on Metalorganic Vapor Phase Epitaxy (A5-3) (Yokohama, Japan) June 1, 1994
  • Surface Orientation Dependence of Growth Rate of Cubic GaN
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    7th International Conference on Metalorganic Vapor Phase Epitaxy (A10-2) (Yokohama, Japan) June 3, 1994
  • Effect of Growth Interruption on the Interface Flatness in Metalorganic Vapor Phase Epitaxy-Grown GaAs/GaAsP Heterointerface
    Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    7th International Conference on Metalorganic Vapor Phase Epitaxy (P1-15) (Yokohama, Japan) June 1, 1994
  • (In Japanese)GaAs/GaAsP量子細線の偏光特性
    Wugen Pan, Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第41回連合会 (28pS11)（Kawasaki, Japan）March 28, 1994
  • (In Japanese)パターン基板上に成長した立方晶GaNからのPL
    Masaki Nagahra, Wugen Pan, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第41回連合会 (28pX4)（Kawasaki, Japan）March 28, 1994
  • (In Japanese)低窒素濃度GaPN混晶のPLE評価
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    応用物理学会第41回連合会 (28pX5)（Kawasaki, Japan）March 28, 1994
  • (In Japanese)光変調反射分光による半導体歪ヘテロ構造に関する研究
    Hiroyuki Yaguchi, Yasuhiro Shiraki
    平成5年度　固体エレクトロニクス・オプトエレクトロニクス研究発表会 （Tokyo, Japan）March 1, 1994
  • (In Japanese)準安定混晶GaAsN, GaPNのMOVPE成長
    Kentaro Onabe, Seiro Miyoshi, Naoki Ohkouchi, Hiroyuki Yaguchi, Ryoihi Ito, Yasuhiro Shiraki
    日本学術振興会薄膜第131委員会第170会研究会 (Hamamatsu, Japan) February, 1994
  • Selective Growth of Cubic GaN in Small Area on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    7th Topical Meeting on Crystal Growth Mechanism (Atagawa, Japan) January, 1994