Yaguchi

Presentation 2003


  • (In Japanese) 分光エリプソメータによるSiC上の初期酸化過程観察
    Satoshi Sekiguchi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    応用物理学会SiC及び関連ワイドギャップ半導体研究会第12回講演会 (Nara, Japan)
    November, 2003
  • (In Japanese) 光電子分光法による酸化膜/SiC 界面の評価
    Yasuto Hijikata, Hiroyuki Yaguchi, Yuuki Ishida, Masahito Yoshikawa, Tomihiro Kamiya, Sadafumi Yoshida
    応用物理学会SiC及び関連ワイドギャップ半導体研究会第12回講演会 (Nara, Japan)
    November, 2003
  • (In Japanese) 赤外反射分光による4H-SiCのイオン注入層の結晶性及び電気特性の評価
    Katsutoshi Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Shinichi Nakashima, Junji Senzaki, Sadafumi Yoshida
    応用物理学会SiC及び関連ワイドギャップ半導体研究会第12回講演会 (Nara, Japan)
    November, 2003
  • Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
    Yasuto Hijikata, Hiroyuki Yaguchi, Yuuki Ishida, Masahito Yoshikawa, Tomihiro Kamiya, and Sadafumi Yoshida
    10th International Conference on Silicon Carbide and Related Materials 2003 (Lyon, France)
    October, 2003
  • Characterization of electrical properties in high-dose implanted and post-implanted-annealed 4H-SiC wafers using infrared reflectance spectroscopy
    Katsutoshi Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, and Shinichi Nakashima
    10th International Conference on Silicon Carbide and Related Materials 2003 (Lyon, France)
    October, 2003
  • (In Japanese) Photoluminescence study of dilute GaAsN alloys
    Takashi Aoki, Toshikazu Morioke, J.-W. Oh, Hidefumi Akiyama, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki, Kentaro Onabe
    The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics (1p-K-7) (Fukuoka, Japan)
    September 1, 2003
  • (In Japanese) Photoluminescence study of GaAsN alloys grown on GaAs substrates
    Toshikazu Morioke, Takashi Aoki, J.-W. Oh, Motoyoshi Baba, Hidefumi Akiyama, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki, Kentaro Onabe
    The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics (1p-K-8) (Fukuoka, Japan)
    September 1, 2003
  • (In Japanese) Characterization of the crystal structure of GaInNAs alloys using Raman spectroscopy
    Hiroshi Motomura, Yasuto Hijikata, Hirouyki Yaguchi, Sadafumi Yoshida, Akira Hida, Kentaro Onabe
    The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics (1p-K-15) (Fukuoka, Japan)
    September 1, 2003
  • (In Japanese) MBE growth of cubic GaN on 3C-SiC(001) using nitrogen plasma and NH3
    Teruto Miura, Kenji Nishida, Yoshihiro Kitamura, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics (1p-G-18) (Fukuoka, Japan)
    September 1, 2003
  • (In Japanese) RF-MBE growth of cubic InN
    Kenji Nishida, Teruto Miura, Yoshihiro Kitamura, Yohei Iwahashi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics (31p-G-8) (Fukuoka, Japan)
    August 31, 2003
  • (In Japanese) Initial stage of SiC oxidation studied by spectroscopic ellipsometer (II)
    Satoshi Sekiguchi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics (2a-B-3) (Fukuoka, Japan)
    September 2, 2003
  • (In Japanese) Characterization of oxide films on 4H and 6H-SiC by Spring-8, spectroscopic ellipsometry, and C-V measurements
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasutaka Takada, Keisuke Kobayashi, Shoku Shi, Hiroshi Nohira, Takeo Hattori
    The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics (2a-B-4) (Fukuoka, Japan)
    September 2, 2003
  • Improvement in the luminescence efficiency of GaAsN alloys by photoexcitation
    Hiroyuki Yaguchi, Toshikazu Morioke, Takashi Aoki, Yasuto Hijikata, Sadafumi Yoshida, Hidefumi Akiyama, Noritaka Usami, Daiichiro Aoki, and Kentaro Onabe
    5th International Conference on Nitride Semiconductors (Th-P3.066) (Nara, Japan)
    May 29, 2003
  • Spectroscopic ellipsometry study on the dielectric functions of GaPN alloys
    Hiroshi Kanaya, Hiroyuki Yaguchi, Yasuto Hijikata, Sadafumi Yoshida, Seiro Miyoshi, and Kentaro Onabe
    5th International Conference on Nitride Semiconductors (Th-P3.067) (Nara, Japan)
    May 29, 2003
  • Raman study of the strain and homogeneity in GaAsN alloys
    Makoto Nishihara, Hiroyuki Yaguchi, Yasuto Hijikata, Sadafumi Yoshida, Daiichiro Aoki, Akira Hida, and Kentaro Onabe
    5th International Conference on Nitride Semiconductors (Th-P3.068) (Nara, Japan)
    May 29, 2003
  • (In Japanese) Temperature dependence of dielectric functions of GaPN alloys
    Hiroshi Kanaya, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Seiro Miyoshi, Kentaro Onabe
    The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies (30a-YA-12) (Yokohama) 2003. 3. 30
  • (In Japanese) Improvement in the Luminescence Efficiency of GaAsN Alloys by Laser Irradiation
    Hiroyuki Yaguchi, Toshikazu Morioke, Takashi Aoki, Yasuto Hiijkata, Sadafumi Yoshida, Noritaka Usami, Hidefumi Akiyama, Daiichiro Aoki, Kentaro Onabe
    The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies (30a-YA-1) (Yokohama, Japan)
    March 30, 2003
  • (In Japanese) Growth of cubic GaN on 3C-SiC(001) by MBE usingNH3 (VII)
    Teruto Miura, Tetsuya Sasaki, Tomonari Nakada, Kenji Nishida, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies (30a-V-4) (Yokohama, Japan)
    March 30, 2003
  • (In Japanese) UPS Studies of the Post Oxidation Processes on the Oxide/SiC Interfaces
    Yasuto Hijikata, Hiroyuki Yaguchi, Yuuki Ishida, Masahito Yoshikawa, Tomihiro Kamiya, Sadafumi Yoshida
    The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies (29p-ZB-1) (Yokohama, Japan)
    March 29, 2003
  • (In Japanese) Characterization of the electric properties and thickness of ion implantation layer in 4H-SiC wafer using infrared reflectance spectroscopy
    Katsutoshi Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Shinichi Nakashima, Junji Senzaki, Taketsugu Yamamoto
    The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies (29a-ZB-5) (Yokohama, Japan)
    March 29, 2003
  • (In Japanese) Characterization of oxide/SiC interfaces by in situ spectroscopic ellipsometer
    Satoshi Sekiguchi, Satoshi Kawato, Satoshi Yoshida, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies (29p-ZB-2) (Yokohama, Japan)
    March 29, 2003
  • Photoemission Spectroscopy and In-Situ Spectroscopic Ellipsometry Studies on the Ar Post-Oxidation-Annealing Effects
    Yasuto Hijikata, Satoshi Kawato, Satoshi Sekiguchi, Hiroyuki Yaguchi, Yuuki Ishida, Masahito Yoshikawa, Tomihiro Kamiya and Sadafumi Yoshida
    1st Asia-Pacific Workshop on Widegap Semiconductors (Mav06) (Awajishima, Japan)
    March 10, 2003