Publication 2010

• Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A
  T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
  Physica E Vol. 42, No 10, pp. 2529-2531 (2010).
  DOI: 10.1016/j.physe.2009.12.011
• RF-MBE growth of InN on 4H-SiC (0001) with off-angles
  M. Orihara, S. Takizawa, T. Sato,Y. Ishida, S. Yoshida, Y. Hijikata, and H. Yaguchi
  Physica Status Solidi C Vol. 7, No. 7-8, pp. 2016-2018 (2010).
  DOI: 10.1002/pssc.200983441
• In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
  K. Kouda, Y. Hijikata, H. Yaguchi, and S. Yoshida
  Materials Science Forum Vols. 645-648, pp. 813-816 (2010).
  DOI: 10.4028/www.scientific.net/MSF.645-648.813
• Model calculations of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model
  Y. Hijikata, H. Yaguchi and S. Yoshida
  Materials Science Forum Vols. 645-648, pp. 809-812 (2010).
  DOI: 10.4028/www.scientific.net/MSF.645-648.809