Yaguchi

Presentation 2009


  • (In Japanese) In-situ分光エリプソメータによる低酸素分圧下におけるSiC酸化過程の観察
    Keiko Kouda, Yasuto Hijikata, Hirouki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会第18回講演会(P-26) (Kobe, Japan)
    December 17, 200
  • (In Japanese) 4H-SiC/酸化膜界面の光学的および電気的評価
    Takahiro Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会第18回講演会(P-32) (Kobe, Japan)
    December 17, 2009
  • (In Japanese) SiおよびC原子放出モデルに基づく様々な酸化温度におけるSiC 酸化速度のモデル計算
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会第18回講演会(P-74) (Kobe, Japan)
    December 17, 2009
  • RF-MBE Growth of InN on 4H-SiC(0001) with Off-angles
    Misao Orihara, Shin Takizawa, Takanori Sato, Yuuki Ishida, Sadafumi Yoshida, Yasuto Hijikata, Hiroyuki Yaguchi
    8th International Conference on Nitride Semiconductors (ThP13) (Jeju, Korea)
    October 22, 2009
  • In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
    Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    International Conference on Silicon Carbide and Related Materials 2009 (Tu-P-40) (Nurnberg, Germany)
    October 13, 2009
  • Model calculation of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    International Conference on Silicon Carbide and Related Materials 2009 (Th-3B-5) (Nurnberg, Germany)
    October 15, 2009
  • (In Japanese) 1H,1H,2H,2H-ヘンイコサフルオロ-1-ドデカノールと1-ヘキサデカノールの固体からの自発的展開による単分子膜形成についての研究
    藤田 やすか, ヴィレヌーヴ 真澄美, 矢口 裕之, 中原 弘雄
    第62回コロイドおよび界面化学討論会 (P065) (Okayama, Japan)
    September 19, 2009
  • (In Japanese) Photoreflectance study of the electronic structure of GaAsN alloys
    Wataru Okubo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Ryuji Katayama, Kentaro Onabe
    The 70th JSAP Autumn Meeting 2019 (9p-C-6) (Toyama, Japan)
    September 9, 2009
  • (In Japanese) Photoluminescence excitation study of dilute GaAsN alloys
    Akira Ishikawa, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Makoto Okano, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama
    The 70th JSAP Autumn Meeting 2019 (9p-C-11) (Toyama, Japan)
    September 9, 2009
  • (In Japanese) Photoluminescence from isoelectronic traps in N δ-doped GaAs/AlGaAs heterostructures
    Kengo Takamiya, Yuta Endo, Toshiyuki Fukushima, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Makoto Okane, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama
    The 70th JSAP Autumn Meeting 2019 (9p-C-12) (Toyama, Japan)
    September 9, 2009
  • (In Japanese) Direct growth of InN on 4H-SiC(0001) with off-angles by RF-MBE
    Misao Orihara, Shin Takizawa, Takanori Sato, Yuuki Ishida, Sadafumi Yoshida, Yasuto Hijikata, Hiroyuki Yaguchi
    The 70th JSAP Autumn Meeting 2019 (10p-E-2) (Toyama, Japan)
    September 10, 2009
  • (In Japanese) In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
    Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 70th JSAP Autumn Meeting 2019 (10p-M-11) (Toyama, Japan)
    September 10, 2009
  • Polarization properties of photoluminescence from individual isoelectronic traps in nitrogen delta-doped semiconductors: effect of host crystals
    Hiroyuki Yaguchi
    The Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (O-16) (Anan, Japan)
    August 11, 2009
  • (In Japanese) GaAs(001)および(111)面基板上に作製した窒素δドープGaAs中の等電子トラップからの発光
    Toshiyuki Fukushima, Hiroyuki Yaguchi
    第５回量子ナノ材料セミナー（Saitama, Japan）
    July 29, 2009
  • Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A
    Toshiyuki Fukushima, Masatoshi Ito, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Makoto Okano, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
    The 14th International Conference on Modulated Semiconductor Structures (Tu-mP5) (Kobe, Japan)
    July 21, 2009
  • (In Japanese) A measurement of SiC oxidation rate in the thick oxide region
    Takahiro Wakabayashi, Toshiya Shibasaki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies (30p-F-1) (Tsukuba, Japan)
    March 30, 2009
  • (In Japanese) A SiC oxidation model based on the interfacial Si and C emission phenomenon
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies (30p-F-2) (Tsukuba, Japan)
    March 30, 2009
  • (In Japanese) Oxygen-Partial Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry (II)
    Keiko Kouda, Toshiyuki Takaku, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies (30p-F-3) (Tsukuba, Japan)
    March 30, 2009
  • (In Japanese) MOVPE growth of InPN layer on InP(001) substrate
    Yuki Seki, Shigeyuki Kuboya, Quang Tu Thieu, Ryuji Katayama, Hiroyuki Yaguchi, Kentaro Onabe
    The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies (31p-J-6) (Tsukuba, Japan)
    March 31, 2009
  • (In Japanese) Photoluminescence from isoelectronic traps in N δ-doped GaAs grown on variously oriented GaAs surfaces (II)
    Toshiyuki Fukushima, Masatoshi Ito, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Makoto Okano, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
    The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies (31p-J-16) (Tsukuba, Japan)
    March 31, 2009
  • (In Japanese) Photoluminescence from isoelectronic traps in nitrogen δ-doped GaP（III）
    Masatoshi Ito, Toshiyuki Fukushima, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Makoto Okano, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
    The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies (31p-J-17) (Tsukuba, Japan)
    March 31, 2009
  • Photoluminescence study of hexagonal InN/InGaN multiple quantum well structures grown on 3C-SiC (001) substrates by RF-MBE
    Hiroyuki Yaguchi, Shigeru Hirano, Misao Orihara, Yasuto Hijikata, and Sadafumi Yoshida
    The 1st International Forum on Frontier Photonics (O-2) (Saitama, Japan)
    March 5, 2009
  • Characterization of 4H-SiC/SiO2 interfaces using a deep ultraviolet spectroscopic ellipsometer
    Takahiro Wakabayashi, Hideyasu Seki, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
    The 1st International Forum on Frontier Photonics (P-14) (Saitama, Japan)
    March 6, 2009
  • Photoluminescence from isoelectronic traps in nitrogen delta-doped GaAs grown on variously oriented GaAs surfaces
    Toshiyuki Fukushima, Masatoshi Ito, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Makoto Okano, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama and Kentaro Onabe
    The 1st International Forum on Frontier Photonics (P-15) (Saitama, Japan)
    March 6, 2009