Publication 2020

• Photoluminescence intensity change of GaP_1-xN_x alloys by laser irradiation
  Md. Zamil Sultan, A. Shiroma, S. Yagi, K. Takamiya, and H. Yaguchi
  AIP Advances Vol. 10, No. 9, pp. 095302-1-5 (2020).
  DOI: 10.1063/5.0020793
• Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter‐Based AlN Templates
  Y. Mogami, A. Osawa, K. Ozaki, Y. Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, M. Jo, N. Maeda, H. Yaguchi, and H. Hirayama
  Physica Status Solidi B Vol. 257, No. 4, pp. 1900590-1-4 (2020).
  DOI: 10.1002/pssb.201900590
• Epitaxial growth of CH₃NH₃PbI₃ on rubrene single crystal
  T. Miyadera, Y. Auchi, T. Koganezawa, H. Yaguchi, and M. Chikamatsu
  Cover
  APL Materials Vol. 8, No. 4, pp. 041104-1-7 (2020).
  DOI: 10.1063/1.5142307
• Spectral Change of E_- Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimation from Thermal Activation
  Md. Dulal Haque, N. Kamata, A. Z. M. Touhidul Islam, S. Yagi, and H. Yaguchi
  Journal of Electronic Materials Vol. 49, No. 2, pp. 1550-1555 (2020).
  DOI: 10.1007/s11664-019-07856-6
• Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below-Gap Excitation Light
  S. Ferdous, N. Kamata, S. Yagi, and H. Yaguchi
  Physica Status Solidi B Vol. 257, No. 2, pp. 1900377-1-5 (2020).
  DOI: 10.1002/pssb.201900377