Publication 2014


  • Enhanced optical absorption due to E+-related band transition in GaAs:N δ-doped superlattices
    S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H. Yaguchi
    Applied Physics Express Vol. 7, No. 10, pp. 102301-1-4 (2014).
    DOI: 10.7567/APEX.7.102301
  • Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys
    W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
    Physica Status Solidi A Vol. 211, No. 4, pp. 752-755 (2014).
    DOI: 10.1002/pssa.201300462
  • First-principles study on the conduction band electron states of GaAsN alloys
    K. Sakamoto and H. Yaguchi
    Physica Status Solidi C Vol. 11, No. 3-4, pp. 911-913 (2014).
    DOI: 10.1002/pssc.201300531
  • Si emission into the oxide layer during oxidation of silicon carbide
    Y. Hijikata, Y. Akasaka, S. Yagi, and H. Yaguchi
    Materials Science Forum Vols. 778-780, pp. 553-556 (2014).
    DOI: 10.4028/www.scientific.net/MSF.778-780.553