Yaguchi

Presentation 1998


  • Photoluminescence Study of InP/GaP Highly Strained Quantum Wells
    T. Kimura, Hiroyuki Yaguchi, Noritaka Usami, Kentaro Onabe, Yasuhiro Shiraki
    25th International Symposium on Compound Semiconductors (Th2A-3) (Nara, Japan)
    October 15, 1998
  • Metalorganic vapor phase epitaxy of high quality cubic GaN, AlGaN and their application to optical devices
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    2nd International Symposium on Blue Laser and Light Emitting Diodes (Chiba, Japan)
    October 2, 1998
  • (In Japanese) Characterization of Semiconductor Low Dimensinal Structures Using Cathodoluminescence
    Hiroyuki Yaguchi, Tomoko Tsujikawa, Kentaro Onabe
    43rd Symposium of the Japanese Society of Electron Miscroscopy (Chiba, Japan)
    October 28, 1998
  • (In Japanese) Annealing effect on luminescence from GaPAsN/GaP multiple quantum wells
    Hiroyuki Yaguchi, Goshi Biwa, Hidefumi Akiyama, Motoyoshi Baba, Kentaro Onabe, Yasuhiro Shiraki
    The 59th Autumn Meeting, 1998; The Japan Society of Applied Physics (15a-YA-7) (Hiroshima, Japan)
    September 15, 1998
  • (In Japanese) Time-resolved photoluminescence of cubic GaN grown by metalorganic vapor phase epitaxy
    Hiroyuki Yaguchi, Jun Wu, Hidefumi Akiyama, Motoyoshi Baba, Kentaro Onabe, Yasuhiro Shiraki
    The 59th Autumn Meeting, 1998; The Japan Society of Applied Physics (17a-YA-2) (Hiroshima, Japan)
    September 17, 1998
  • (In Japanese) AMOVPE growth of high Al composition AlGaN on GaAs(100) substrates
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
    The 59th Autumn Meeting, 1998; The Japan Society of Applied Physics (17a-YA-1) (Hiroshima, Japan)
    September 17, 1998
  • (In Japanese) Photoluminescence properties of InP/GaP highly strained quantum wells
    Tokuharu Kimura, Hiroyuki Yaguchi, Noritaka Usami, Kentaro Onabe, Yasuhiro Shiraki
    The 59th Autumn Meeting, 1998; The Japan Society of Applied Physics (18p-YA-8) (Hiroshima, Japan)
    September 17, 1998
  • (In Japanese) GaAs low-dimensonal structures grown in teterahedral-shaped recesses by MOVPE IV observation of the bottom regions in TSRs
    Tomoko Tsujikawa, Seiichiro Mori, Hiroshi Watanabe, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 59th Autumn Meeting, 1998; The Japan Society of Applied Physics (17p-YG-11) (Hiroshima, Japan)
    September 15, 1998
  • Metalorganic vapor phase epitaxy of cubic GaN, AlGaN on GaAs (100) substrates and their optical properties
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    International Topical Meeting on III-V Nitride Materials and Devices (ITMND'98)
    August, 1998
  • Luminescence properties of GaPAsN/GaP lattice-matched multiple quantum wells
    Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    17th Electronic Materials Symposium (Izu-Nagaoka, Japan)
    July, 1998
  • Micro Optical Spectroscopy of Cubic GaN Grown on 3C-SiC (001) Substrates by Metalorganic Vapor Phase Epitaxy
    Hiroyuki Yaguchi, Jun Wu, Baoping Zhang, Y. Segawa, H. Nagawasa, Kentaro Onabe and Yasuhiro Shiraki
    17th Electronic Materials Symposium (Izu-Nagaoka, Japan)
    July, 1998
  • Observation of stimulated emission from optically pumped cubic GaN/AlGaN heterostructures grown on GaAs (100) substrates
    Jun Wu, Hiroyuki Yaguchi, G. Mohs, T. Aoki, Makoto Kuwata-Gonokami, Kentaro Onabe and Yasuhiro Shiraki
    17th Electronic Materials Symposium (Izu-Nagaoka, Japan)
    July, 1998
  • Photoluminescence study of InP/GaP highly strained quantum wells
    Tokuharu Kimura, Hiroyuki Yaguchi, Noritaka Usami, Kentaro Onabe and Yasuhiro Shiraki
    17th Electronic Materials Symposium (Izu-Nagaoka, Japan)July, 1998
  • High-temperature MOVPE growth of GaAs/AlGaAs quantum structures in tetrahedral-shaped recesses on GaAs (111)B substrates
    Tomoko Tsujikawa, Toshifumi Irisawa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (Mo5-5) (Sapporo, Japan)
    June, 1998
  • (In Japanese) 立方晶ナイトライドのMOVPE成長と評価
    Hiroyuki Yaguchi, Jun Wu, Kentaro Onabe
    電子情報通信学会(LQE98-27) (Tokyo, Japan)
    June 16, 1998
  • Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC (001) substrates by metalorganic vapor phase epitaxy
    Hiroyuki Yaguchi, Jun Wu, Baoping Zhang, Y. Segawa, H. Nagasawa, Kentaro Onabe and Yasuhiro Shiraki
    9th International Conference on Metalorganic Vapor Phase Epitaxy (La Jolla, USA)
    June 4, 1998
  • Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    9th International Conference on Metalorganic Vapor Phase Epitaxy (La Jolla, USA)
    June 2, 1998
  • Photoluminescence and photoluminescence excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures
    Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    9th International Conference on Metalorganic Vapor Phase Epitaxy (La Jolla, USA)
    June 3, 1998
  • (In Japanese) Photoluminescence Excitation Spectroscopy of GaP1-x-yAsyNx/GaP Multi-Quantum Wells
    Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
    The 45th Spring Meeting 1998; The Japan Society of Applied Physics and Related Societies (28p-ZM-16) (Hachioji, Japan)
    March 28, 1998
  • (In Japanese) Micro-photoluminescence spectroscopy of cubic GaN grown on 3C-SiC substrates
    Hiroyuki Yaguchi, Jun Wu, Baoping Zhang, Yusaburo Segawa, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki
    The 45th Spring Meeting 1998; The Japan Society of Applied Physics and Related Societies (29p-ZP-3) (Hachioji, Japan)
    March 29, 1998
  • (In Japanese) MOPVE growth and photoluminescence properties of cubic AlGaN on GaAs(001) substrates
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
    The 45th Spring Meeting 1998; The Japan Society of Applied Physics and Related Societies (29p-ZP-4) (Hachioji, Japan)
    March 29, 1998
  • (In Japanese) Stimulated emission from photopumped cubic GaN/AlGaN double heterostructure
    Jun Wu, Hiroyuki Yaguchi, Georg Mohs, Takao Aoki, Makoto Gonokami, Kentaro Onabe, Yasuhiro Shiraki
    The 45th Spring Meeting 1998; The Japan Society of Applied Physics and Related Societies (29p-ZP-5) (Hachioji, Japan)
    March 29, 1998
  • (In Japanese) Fabrication of periodic domain inverted GaAs by sublattice inversion epitaxy
    Shinji Koh, Takashi Kondo, Minoru Ebihara, Hiroyuki Yaguchi, Noritaka Usamai, Yasuhiro Shiraki, and Ryoichi Ito
    The 45th Spring Meeting 1998; The Japan Society of Applied Physics and Related Societies (30a-SYD-3) (Hachioji, Japan)
    March 30, 1998
  • (In Japanese) Semiconductor second-harmonic generator based on QPM for nonpropagating nonlinear polarization
    Motoyuki Sato, Hiroyuki Yaguchi, Ichiro Shoji, Shigeru Nakagwa, Norihide Yamada, Kentaro Onabe, Yasuhiro Shiraki
    The 45th Spring Meeting 1998; The Japan Society of Applied Physics and Related Societies (30a-SYD-18) (Hachioji, Japan)
    March 30, 1998
  • (In Japanese) GaAs low-dimensonal structures grown in tetrahedral-shaped recesses by MOVPE III. Effect of the high-temperature growtn above 800˚C
    Tomoko Tsujikawa, Toshifumi Irisawa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    The 45th Spring Meeting 1998; The Japan Society of Applied Physics and Related Societies (30p-PB-4) (Hachioji, Japan)
    March 30, 1998
  • (In Japanese) GaAs/Ge/GaAs sublattice inversion epitaxy
    Shinji Koh, Takashi Kondo, Minoru Ebihara, Hiroyuki Yaguchi, Noritaka Usami, Yasuhiro Shiraki, Ryoichi Ito
    The 45th Spring Meeting 1999; The Japan Society of Applied Physics and Related Societies (30a-ZM-6) (Hachioji, Japan)
    March 30, 1998