Yaguchi

Presentation 1998


  • Photoluminescence Study of InP/GaP Highly Strained Quantum Wells
    T. Kimura, Hiroyuki Yaguchi, Noritaka Usami, Kentaro Onabe, Yasuhiro Shiraki
    25th International Symposium on Compound Semiconductors (Th2A-3) (Nara, Japan)
    October 15, 1998
  • Metalorganic vapor phase epitaxy of high quality cubic GaN, AlGaN and their application to optical devices
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    2nd International Symposium on Blue Laser and Light Emitting Diodes (Chiba, Japan)
    October, 1998
  • (In Japanese) カソードルミネッセンスによる半導体低次元構造の評価
    Hiroyuki Yaguchi, Tomoko Tsujikawa, Kentaro Onabe
    日本電子顕微鏡学会第43回シンポジウム (Chiba, Japan)
    October, 1998
  • (In Japanese) GaPAsN/GaP多重量子井戸における発光に対する熱処理の効果
    Hiroyuki Yaguchi, Goshi Biwa, Hidefumi Akiyama, Motoyoshi Baba, Kentaro Onabe, Yasuhiro Shiraki
    第59回応用物理学会学術講演会(15aYA7) (Hiroshima, Japan)
    September 15, 1998
  • (In Japanese) MOVPE成長した立方晶GaNの時間分解フォトルミネッセンス
    Hiroyuki Yaguchi, Jun Wu, Hidefumi Akiyama, Motoyoshi Baba, Kentaro Onabe, Yasuhiro Shiraki
    第59回応用物理学会学術講演会(17aYA2) (Hiroshima, Japan)
    September 17, 1998
  • (In Japanese) Al組成の大きなAlGaNのMOVPE成長
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
    第59回応用物理学会学術講演会(17aYA1) (Hiroshima, Japan)
    September 17, 1998
  • (In Japanese) InP/GaP高歪量子井戸のフォトルミネッセンス特性
    Tokuharu Kimura, Hiroyuki Yaguchi, Noritaka Usami, Kentaro Onabe, Yasuhiro Shiraki
    第59回応用物理学会学術講演会(17aYA1) (Hiroshima, Japan)
    September 17, 1998
  • (In Japanese) 正四面体型リセス内にMOVPE成長したGaAs低次元構造：リセス底部の構造評価
    Tomoko Tsujikawa, Seiichiro Mori, Hiroshi Watanabe, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    第59回応用物理学会学術講演会(15aYA3) (Hiroshima, Japan)
    September 15, 1998
  • Metalorganic vapor phase epitaxy of cubic GaN, AlGaN on GaAs (100) substrates and their optical properties
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    International Topical Meeting on III-V Nitride Materials and Devices (ITMND'98)
    August, 1998
  • Luminescence properties of GaPAsN/GaP lattice-matched multiple quantum wells
    Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    17th Electronic Materials Symposium (Izu-Nagaoka, Japan)
    July, 1998
  • Micro Optical Spectroscopy of Cubic GaN Grown on 3C-SiC (001) Substrates by Metalorganic Vapor Phase Epitaxy
    Hiroyuki Yaguchi, Jun Wu, Baoping Zhang, Y. Segawa, H. Nagawasa, Kentaro Onabe and Yasuhiro Shiraki
    17th Electronic Materials Symposium (Izu-Nagaoka, Japan)
    July, 1998
  • Observation of stimulated emission from optically pumped cubic GaN/AlGaN heterostructures grown on GaAs (100) substrates
    Jun Wu, Hiroyuki Yaguchi, G. Mohs, T. Aoki, Makoto Kuwata-Gonokami, Kentaro Onabe and Yasuhiro Shiraki
    17th Electronic Materials Symposium (Izu-Nagaoka, Japan)
    July, 1998
  • Photoluminescence study of InP/GaP highly strained quantum wells
    Tokuharu Kimura, Hiroyuki Yaguchi, Noritaka Usami, Kentaro Onabe and Yasuhiro Shiraki
    17th Electronic Materials Symposium (Izu-Nagaoka, Japan)July, 1998
  • High-temperature MOVPE growth of GaAs/AlGaAs quantum structures in tetrahedral-shaped recesses on GaAs (111)B substrates
    Tomoko Tsujikawa, Toshifumi Irisawa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (Mo5-5) (Sapporo, Japan)
    June, 1998
  • (In Japanese) 立方晶ナイトライドのMOVPE成長と評価
    Hiroyuki Yaguchi, Jun Wu, Kentaro Onabe
    電子情報通信学会(LQE98-27) (Tokyo, Japan)
    June 16, 1998
  • Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC (001) substrates by metalorganic vapor phase epitaxy
    Hiroyuki Yaguchi, Jun Wu, Baoping Zhang, Y. Segawa, H. Nagasawa, Kentaro Onabe and Yasuhiro Shiraki
    9th International Conference on Metalorganic Vapor Phase Epitaxy (La Jolla, USA)
    May, 1998
  • Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    9th International Conference on Metalorganic Vapor Phase Epitaxy (La Jolla, USA)
    May, 1998
  • Photoluminescence and photoluminescence excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures
    Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    9th International Conference on Metalorganic Vapor Phase Epitaxy (La Jolla, USA)
    May, 1998
  • (In Japanese) GaPAsN/GaP多重量子井戸のフォトルミネッセンス励起分光
    Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
    第45回応用物理学関係連合講演会(28pZM16) (Tokyo, Japan)
    March 28, 1998
  • (In Japanese) 3C-SiC基板上に成長した立方晶GaNの顕微フォトルミネッセンス
    Hiroyuki Yaguchi, Jun Wu, Baoping Zhang, Yusaburo Segawa, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki
    第45回応用物理学関係連合講演会(29pZP3) (Tokyo, Japan)
    March 29, 1998
  • (In Japanese) 立方晶AlGaNのMOVPE成長とフォトルミネッセンス特性
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
    第45回応用物理学関係連合講演会(29pZP4) (Tokyo, Japan)
    March 29, 1998
  • (In Japanese) 立方晶GaN/AlGaNヘテロ構造における誘導放出
    Jun Wu, Hiroyuki Yaguchi, G. Mohs, T. Aoki, Makoto Gonokami, Kentaro Onabe, Yasuhiro Shiraki
    第45回応用物理学関係連合講演会(29pZP5) (Tokyo, Japan)
    March 29, 1998
  • (In Japanese) 化合物半導体を用いた定在波疑似位相整合SHG素子
    Motoyuki Sato, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Shigeru Nakagwa, Norihide Yamada
    第45回応用物理学関係連合講演会(30aSYD18) (Tokyo, Japan)
    March 30, 1998
  • (In Japanese) 正四面体型リセス内にMOVPE成長したGaAs低次元構造III. 800C以上で高温成長した時の効果
    Tomoko Tsujikawa, Toshifumi Irisawa, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    第45回応用物理学関係連合講演会(30pB4) (Tokyo, Japan)
    March 30, 1998
  • (In Japanese) GaAs/Ge/GaAs副格子交換エピタキシー
    Shinji Koh, Takashi Kondo, Kaoru Morita, Hiroyuki Yaguchi, Noritaka Usami, Yasuhiro Shiraki, Ryoichi Ito
    第45回応用物理学関係連合講演会(30aZM6) (Tokyo, Japan)
    March 30, 1998