Presentation 2001

• (In Japanese) 赤外反射分光によるSiC 基板のキャリヤ濃度及び移動度の分布測定
  Katsutoshi Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Shinichi Nakashima, Naoki Oyanagi
  SiC及び関連ワイドギャップ半導体研究会第10回講演会 (P34) (Kyoto, Japan)
  December 14 ,2001
• (In Japanese) Characterization of the interfaces between SiC and oxide films by spectroscopi ellipsometer
  Yuichi Tomioka, Masahiko Midorikawa, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Hisayoshi Ito, Yuuki Ishida, Ryoji Kosugi, Sadafumi Yoshida
  SiC及び関連ワイドギャップ半導体研究会第10回講演会 (P50) (Kyoto, Japan)
  December 14, 2001
• (In Japanese) X-ray photoelectron spectroscopy studies of post oxidation process effects on oxide/SiC interfaces
  Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Hisayoshi Ito, Sadafumi Yoshida
  SiC及び関連ワイドギャップ半導体研究会第10回講演会 (P51) (Kyoto, Japan)
  December 13, 2001
• Depth Profiling of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
  Sadafumi Yoshida, Takeshi Iida, Yuichi Tomioka, Yasuto Hijikata, Misao Orihara, and Hiroyuki Yaguchi
  6th China-Japan Symposium on Thin Films (Kunming, China)
  November, 2001
• Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
  Yuichi Tomioka, Takeshi Iida, Masahiko Midorikawa, Hiroyuki Tukada, Kazuo Yoshimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Masato Yoshikawa, Yuuki Ishida, Ryoji Kosugi and Sadafumi Yoshida
  International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001) (ThB2-6) (Tsukuba, Japan)
  November 1, 2001
• X-ray Photoelectron Spectroscopy Studies of Post Oxidation Process Effects on Oxide/SiC Interfaces
  Yasuto Hijikata, Hiroyuki Yaguchi, Masahiko Yoshikawa and Sadafumi Yoshida
  International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001) (WeP-66) (Tsukuba, Japan)
  October 31, 2001
• Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
  Hiroyuki Yaguchi, Katsutoshi Narita, Yasuto Hijikata, Sadafumi Yoshida, Shinichi Nakashima and Naoki Oyanagi
  International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001) (WeP-80) (Tsukuba, Japan)
  October 31, 2001
• Electronic Structure of III-V-N Alloys Studied Using Spectroscopic Ellipsometry
  Hiroyuki Yaguchi
  International Narrow Gap Nitride Workshop (INGNW-01) (Singapore)
  October 9, 2001
• (In Japanese) SiGe多結晶の凝固組織および光学特性
  Tatsuya Takahashi, Kozo Fujiwara, Noritaka Usami, Toru Ujihara, Gen Sazaki, Yoshihiro Murakami, Hiroyuki Yaguchi, Kazuo Obara, Toetsu Shishido, Kazuo Nakajima
  日本金属学会 (Fukuoka, Japan)
  September 24, 2001
• (In Japanese) Growth of cubic GaN on 3C-SiC(001) by MBE using NH₃ (IV)
  Hideyuki Watanabe, Tetsuya Sasaki, Tomonari Nakada, Daisuke Ogawa, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 62nd Autumn Meeting, 2001; The Japan Society of Applied Physics (11a-Q-9) (Toyota, Japan)
  September 11, 2001
• (In Japanese) Control of macroscopic properties of multicrystalline-SiGe by microscopic compositional distributuion
  Noritaka Usami, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Hiroyuki Yaguchi, Kazuo Nakajima
  The 62nd Autumn Meeting, 2001; The Japan Society of Applied Physic (12a-S-11) (Toyota, Japan)
  September 12, 2001
• (In Japanese) Characterization of SiO₂/SiC interfaces by Spectroscopic Ellipsometer
  Yuichi Tomioka, Masahiko Midorikawa, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, Sadafumi Yoshida
  The 62nd Autumn Meeting, 2001; The Japan Society of Applied Physic (14a-S-8) (Toyota, Japan)
  September 14, 2001
• (In Japanese) Composition Analysis on the Interface Layer of SiO₂/SiC by Electron Spectroscopies
  Yasuto Hijikata, Yuichi Tomioka, Hiroyuki Yaguchi, Masahito Yoshikawa, Sadafumi Yoshida
  The 62nd Autumn Meeting, 2001; The Japan Society of Applied Physic (14a-S-9) (Toyota, Japan)
  September 14, 2001
• Growth simulation of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111)B substrate
  Tomoko Tsujikawa, Mutsuo Ogura and Hiroyuki Yaguchi
  10th International Conference on Modulated Semiconductor Structures (MSS10) (ThP1) (Linz, Austria)
  July, 2001
• Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys
  Hiroyuki Yaguchi, Shinya Kikuchi, Yasuto Hijikata, Sadafumi Yoshida, Daiichiro Aoki and Kentaro Onabe
  The Fourth International Conference on Nitride Semiconductors (ICNS-4) (P1.6) (Denver, USA)
  July 16, 2001
• Spectroscopic Ellipsometry Study on the Electronic Structure Near the Absorption Edge of GaAsN Alloys
  Hiroyuki Yaguchi, Shigeru Matsumoto, Yasuto Hijikata, Sadafumi Yoshida, T. Maeda, Mutsuo Ogura, Daiichiro Aoki and Kentaro Onabe
  The Fourth International Conference on Nitride Semiconductors (ICNS-4) (P1.9) (Denver, USA)
  July 16, 2001
• Persistent Photoconductivity in Si-Doped n-Type GaN
  Hiroyuki Yaguchi, Tatsuhito Nakamura, Yasuto Hijikata, Sadafumi Yoshida, K. Kojima, X. Shen and Hajime Okumura
  The Fourth International Conference on Nitride Semiconductors (ICNS-4) (P20.11) (Denver, USA)
  July 18, 2001
• Temperature dependence of photoluminescence of GaAsN alloys
  Hiroyuki Yaguchi, Shinya Kikuchi, Yasuto Hijikata, Sadafumi Yoshida, Daiichiro Aoki and Kentaro Onabe
  20th Electronic Materials Symposium (C4) (Nara, Japan)
  June 20, 2001
• Composition Analysis of SiO₂/SiC Interfaces by Electron Spectroscopic Measurements Using Slope Shaped Oxide Films
  Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa and Sadafumi Yoshida
  The European Materials Research Society (E-MRS) 2001 Spring Meeting (F-II.7) (Strasbourg, France)
  June, 2001
• (In Japanese) Siドープn型GaNにおける永続光伝導
  Tatsuhito Nakamura, Hiroyuki Yaguchi, 児島一聡, 沈旭強, 奥村元, 吉田貞史
  The 48th Spring Meeting, 2001; The Japan Society of Applied Physics and Related Societies (29a-M-11) (Tokyo, Japan)
  March 29, 2001
• (In Japanese) 走査オージェ電子分光法によるSiO₂/SiC界面層の組成分析
  Yasuto Hijikata, Yuichi Tomioka, Takeshi Iida, Hiroyuki Yaguchi, Masahito Yoshikawa, Sadafumi Yoshida
  The 48th Spring Meeting, 2001; The Japan Society of Applied Physics and Related Societies (30a-E-2) (Tokyo, Japan)
  March 30, 2001
• (In Japanese) 分光エリプソメーターによるSiC酸化膜の屈折率の評価
  Takeshi Iida, Yuichi Tomioka, Hiroyuki Tukada, Masahiko Midorikawa, Kazuo Yoshimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, Sadafumi Yoshida
  The 48th Spring Meeting, 2001; The Japan Society of Applied Physics and Related Societies (30a-E-4) (Tokyo, Japan)
  March 30, 2001
• (In Japanese) 分光エリプソメータによるSiC上のLTO膜の評価
  Yuichi Tomioka, Takeshi Iida, Masahiko Midorikawa, Hiroyuki Tukada, Kazuo Yoshimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, Ryoji Kosugi, Sadafumi Yoshida
  The 48th Spring Meeting, 2001; The Japan Society of Applied Physics and Related Societies (30a-E-5) (Tokyo, Japan)
  March 30, 2001
• (In Japanese) GaAsN混晶のフォトルミネッセンスの温度依存性
  Hiroyuki Yaguchi, Shinya Kikuchi, Shigeru Matsumoto, Yasuto Hijikata, Sadafumi Yoshida, Daiichiro Aoki, Kentaro Onabe
  The 48th Spring Meeting, 2001; The Japan Society of Applied Physics and Related Societies (31a-G-2) (Tokyo, Japan)
  March 31, 2001
• (In Japanese) 分光偏光解析法を用いたGaAsN混晶の光学的評価(II)
  Shigeru Matsumoto, Hiroyuki Yaguchi, Yasuto Hijikata, Daiichiro Aoki, Kentaro Onabe, Tatsurou Maeda 前田辰郎, Mutsuo Ogura, Sadafumi Yoshida
  The 48th Spring Meeting, 2001; The Japan Society of Applied Physics and Related Societies (31a-G-3) (Tokyo, Japan)
  March 31, 2001
• (In Japanese) NH₃を窒素源とした3C-SiC (001)基板上への立方晶GaNのMBE成長(III)
  Hideyuki Watanabe, Daisuke Ogawa, Takayuki Okamoto, Tetsuya Sasaki, Tomonari Nakada, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 48th Spring Meeting, 2001; The Japan Society of Applied Physics and Related Societies (31a-M-7) (Tokyo, Japan)
  March 31, 2001
• (In Japanese) 立方晶AlGaN混晶の低温分光エリプソメトリ測定
  Takanobu Suzuki, Makoto Nishihara, Yasuto Hijikata, Hiroyuki Yaguchi, Misao Orihara, Yuuki Ishida, Hajime Okumura, Sadafumi Yoshida
  The 48th Spring Meeting, 2001; The Japan Society of Applied Physics and Related Societies (31a-M-9) (Tokyo, Japan)
  March 31, 2001