Yaguchi

Presentation 2004


  • (In Japanese) 分光エリプソメータによるSiCの初期酸化過程の観察
    Koichi Kakubari, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    応用物理学会SiC及び関連ワイドギャップ半導体研究会第13回講演会, P-61, p.127 (Nogoya, Japan) October, 2004
  • (In Japanese) 高エネルギー分解能光電子分光による4H-SiC(000-1)面上酸化膜の評価
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasutaka Takada, Keisuke Kobayashi, Shoku SHin, Hiroshi Nohira, Takeo Hattori
    応用物理学会SiC及び関連ワイドギャップ半導体研究会第13回講演会, P-62, p.129 (Nagoya, Japan) October, 2004
  • (In Japanese) Growth of cubic GaN on MgO(001) by RF-MBE
    Hiroyuki Tada, Yoshihiro Kitamura, Yohei Iwahashi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 65th Autumn Meeting, 2004; The Japan Society of Applied Physics (2p-T-9) (Sendai, Japan) September 2, 2004
  • (In Japanese) RF-MBE growth of cubic InN (III)
    Yohei Iwahashi, Yoshihiro Kitamura, Hiroyuiki Tada, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 65th Autumn Meeting, 2004; The Japan Society of Applied Physics (2p-W-8) (Sendai, Japan) September 2, 2004
  • (In Japanese) Crystal growth of InN on 4H-SiC(0001) substrates by RF-MBE
    Yoshihiro Kitamura, Yohei Iwahashi, Hiroyuki Tada, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 65th Autumn Meeting, 2004; The Japan Society of Applied Physics (2p-W-13) (Sendai, Japan) September 2, 2004
  • (In Japanese) RF-MBE growth of InGaN on 4H-SiC substrates
    Misao Orihara, Yoshihiro Kitamura, Yohei Iwahashi, Hiroyuki Tada, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 65th Autumn Meeting, 2004; The Japan Society of Applied Physics (2p-W-14) (Sendai, Japan) September 2, 2004
  • (In Japanese) Nitrogen concentration dependence of improvement in the luminescence efficiency of GaAsN alloys by laser irradiation
    Toshikazu Morioke, Takashi Aoki, J.-W. Oh, Masahiro Yoshita, Hidefumi Akiyama, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki, Kentaro Onabe
    The 65th Autumn Meeting, 2004; The Japan Society of Applied Physics (3p-W-7) (Sendai, Japan) September 3, 2004
  • (In Japanese) Raman scattering spectroscopy of InAsN alloys
    Hiroshi Motomura, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Akira Hida, Susumu Nishio, Ryuji Katayama, Kentaro Onabe
    The 65th Autumn Meeting, 2004; The Japan Society of Applied Physics (3p-W-8) (Sendai, Japan) Septembr 3, 2004
  • (In Japanese) Photoluminescence study of GaPN alloys with low nitrogen concentrations
    Takashi Aoki, Toshikazu Morioke, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Baoping Zhang, Seiro Miyoshi, Kentaro Onabe
    The 65th Autumn Meeting, 2004; The Japan Society of Applied Physics (3p-W-9) (Sendai, Japan) September 3, 2004
  • (In Japanese) Initial stage of SiC oxidation studied by spectroscopic ellipsometry (IV)
    Koichi Kakubari, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 65th Autumn Meeting, 2004; The Japan Society of Applied Physics (4p-K-5) (Sendai, Japan) September 4, 2004
  • Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopic Measurements using Synchrotron Radiation
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasutaka Takata, Keisuke Kobayashi, Shoku Shin, Hiroshi Nohira, and Takeo Hattori
    5th European Conference on Silicon Carbide and Related Materials (Bologna, Italy) September, 2004
  • Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy
    Hiroyuki Yaguchi, Yoshijiro Kitamura, Kenji Nishida, Yohei Iwahashi, Yasuto Hijikata and Sadafumi Yoshida
    International Workshop on Nitride Semiconductors (Pittsburgh, USA) July, 2004
  • (In Japanese) Photoluminescence study of GaAsN alloys with extremely low nitrogen concentration
    Takashi Aoki, Toshikazu Morioke, J.-W. Oh, Hidefumi Akiyama, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki, Kentaro Onabe
    The 51st Spring Meeting, 2004; The Japan Society of Applied Physics and Related Socieities (30p-YG-8) (Hachioji, Japan) March 30, 2004
  • (In Japanese) Excitation power dependence of photoluminescence spectra of GaP1-xNx alloys
    Hiroshi Kanaya, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Baoping Zhang, Seiro Miyoshi, Kentaro Onabe
    The 51st Spring Meeting, 2004; The Japan Society of Applied Physics and Related Socieities (30p-YG-19) (Hachioji, Japan) March 30, 2004
  • (In Japanese) Crystal growth of InN on 3C-SiC(001) substrates by RF-MBE
    Yoshihiro Kitamura, Kenji Nishida, Yohei Iwahashi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 51st Spring Meeting, 2004; The Japan Society of Applied Physics and Related Socieities (29p-YN-7) (Hachioji, Japan) March 29, 2004
  • (In Japanese) RF-MBE growth of cubic InN (II)
    Kenji Nishida, Teruto Miura, Yoshihiro Kitamura, Yohei Iwahashi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 51st Spring Meeting, 2004; The Japan Society of Applied Physics and Related Socieities (29p-YN-8) (Hachioji, Japan) March 29, 2004
  • (In Japanese) Characterization of oxide films on SiC epitaxial (000-1) faces by angle-resolved photoemission spectroscopy measurements using synchrotron radiation
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasutaka Takada, Keisuke Kobayashi, Shoku Shin, Hiroshi Nohira, Takeo Hattori
    The 51st Spring Meeting, 2004; The Japan Society of Applied Physics and Related Socieities (29p-ZM-1) (Hachioji, Japan) March 29, 2004
  • (In Japanese) Initial stage of SiC oxidation studied by spectroscopic ellipsometer (III)
    Koichi Kakubari, Satoshi Sekiguchi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 51st Spring Meeting, 2004; The Japan Society of Applied Physics and Related Socieities (29p-ZM-3) (Hachioji, Japan) March 29, 2004
  • Epitaxial Growth of Hexagonal and Cubic InN Films
    Kenji Nishida, Yoshihiro Kitamura, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    5th International Symposium on Blue Laser and Light Emitting Diodes (Pa14) (Gyeongju, Korea) March 16, 2004
  • Epitaxial Growth of Hexagonal and Cubic InN Films and Their Properties
    Sadafumi Yoshida, Kenji Nishida, Yoshihiro Kitamura, Misao Orihara, Yasuto Hijikata, and Hiroyuki Yaguchi
    Japan, Germany and Spain Workshop on Advanced Semiconductor Optoelectronic Devices and Materials (Yufuin, Japan) March, 2004